2N0623
Abstract: S7420 ANPS071E BSPD30N06S2-23 SPD30N06S2-23
Text: SPD30N06S2-23 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 55 V RDS on 23 m ID 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-23 P- TO252 -3-11 Q67060-S7420
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SPD30N06S2-23
Q67060-S7420
2N0623
BSPD30N06S2-23,
SPD30N06S2-23
2N0623
S7420
ANPS071E
BSPD30N06S2-23
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PN06L13
Abstract: No abstract text available
Text: SPD50N06S2L-13 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID Logic Level V m 12.7 50 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421
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SPD50N06S2L-13
SPD50N06S2L-13
Q67060-
S7421
PN06L13
BSPD50N06S2L-13,
PN06L13
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2N0615
Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15
Text: SPD30N06S2-15 OptiMOS Power-Transistor Product Summary Feature 55 VDS N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated RDS on ID V m 14.7 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-15 P- TO252 -3-11 Q67040-S4253
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SPD30N06S2-15
Q67040-S4253
2N0615
BSPD30N06S2-15,
SPD30N06S2-15
2N0615
ANPS071E
BSPD30N06S2-15
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2n0680
Abstract: g39 SMD BSPD14N06S2-80 SPD14N06S2-80
Text: SPD14N06S2-80 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 55 V RDS on 80 m ID 17 A P- TO252 -3-11 Type Package Ordering Code SPD14N06S2-80 P- TO252 -3-11 Q67060-S7423
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SPD14N06S2-80
Q67060-S7423
2N0680
BSPD14N06S2-80,
SPD14N06S2-80
2n0680
g39 SMD
BSPD14N06S2-80
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2N0623
Abstract: INFINEON PART MARKING to252 2N062 smd diode marking G12
Text: SPD30N06S2-23 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature VDS 55 V R DS on 23 m ID 30 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD30N06S2-23 Package Ordering Code P- TO252 -3-11 Q67060-S7420
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SPD30N06S2-23
SPD30N06S2-23
Q67060-S7420
2N0623
BSPD30N06S2-23,
2N0623
INFINEON PART MARKING to252
2N062
smd diode marking G12
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2N0615
Abstract: SPD30N06S2-15
Text: SPD30N06S2-15 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID 175°C operating temperature V m 14.7 30 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD30N06S2-15 Package Ordering Code P- TO252 -3-11 Q67040-S4253
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SPD30N06S2-15
SPD30N06S2-15
Q67040-S4253
2N0615
BSPD30N06S2-15,
2N0615
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2N0640
Abstract: BSPD25N06S2-40 SPD25N06S2-40 a6024
Text: SPD25N06S2-40 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 55 V RDS on 40 m ID 29 A P- TO252 -3-11 Type Package Ordering Code SPD25N06S2-40 P- TO252 -3-11 Q67060-S7427
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SPD25N06S2-40
Q67060-S7427
2N0640
BSPD25N06S2-40,
SPD25N06S2-40
2N0640
BSPD25N06S2-40
a6024
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2N0822
Abstract: SPD30N08S2-22
Text: SPD30N08S2-22 OptiMOS =Power-Transistor Product Summary Feature 75 VDS N-Channel R DS on Enhancement mode ID 175°C operating temperature V m 21.5 30 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD30N08S2-22 Package Ordering Code P- TO252 -3-11 Q67060-S7413
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SPD30N08S2-22
SPD30N08S2-22
Q67060-S7413
2N0822
BSPD30N08S2-22,
2N0822
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2n0680
Abstract: BSPD14N06S2-80
Text: SPD14N06S2-80 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature VDS 55 V R DS on 80 m ID 17 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD14N06S2-80 Package Ordering Code P- TO252 -3-11 Q67060-S7423
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SPD14N06S2-80
SPD14N06S2-80
Q67060-S7423
2N0680
200Aay
BSPD14N06S2-80,
2n0680
BSPD14N06S2-80
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PN06L13
Abstract: ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13
Text: SPD50N06S2L-13 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • Logic Level V 12.7 mΩ 50 A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421
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SPD50N06S2L-13
Q67060-
S7421
PN06L13
BSPD50N06S2L-13,
SPD50N06S2L-13
PN06L13
ANPS071E
BSPD50N06S2L-13
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PN06L13
Abstract: PN06L 34Dg ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13 S7421
Text: SPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • Logic Level V 12.7 mΩ 50 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421
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SPD50N06S2L-13
Q67060-
S7421
PN06L13
BSPD50N06S2L-13,
SPD50N06S2L-13
PN06L13
PN06L
34Dg
ANPS071E
BSPD50N06S2L-13
S7421
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2N0640
Abstract: MAX408
Text: SPD25N06S2-40 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature VDS 55 V R DS on 40 m ID 29 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD25N06S2-40 Package Ordering Code P- TO252 -3-11 Q67060-S7427
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SPD25N06S2-40
SPD25N06S2-40
Q67060-S7427
2N0640
BSPD25N06S2-40,
2N0640
MAX408
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pn0614
Abstract: Q67060-S7418 smd diode 67A
Text: SPD50N06S2-14 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID 175°C operating temperature V m 14.4 50 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD50N06S2-14 Package Ordering Code P- TO252 -3-11 Q67060-S7418
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SPD50N06S2-14
SPD50N06S2-14
Q67060-S7418
PN0614
BSPD50N06S2-14,
pn0614
Q67060-S7418
smd diode 67A
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11n10
Abstract: smd diode marking 78A TRANSISTOR SMD MARKING CODE SPD11N10 SPU11N10
Text: SPD11N10 SPU11N10 Preliminary data SIPMOS Power-Transistor Feature Product Summary • N-Channel VDS 100 V • Enhancement mode RDS on 170 mΩ • 175°C operating temperature ID 10.5 A • Avalanche rated P- TO251 -3-1 P- TO252 -3-11 • dv/dt rated
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SPD11N10
SPU11N10
Q67042-S4121
11N10
Q67042-S4122
11n10
smd diode marking 78A
TRANSISTOR SMD MARKING CODE
SPD11N10
SPU11N10
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marking 113a
Abstract: No abstract text available
Text: SPD50N03S2L-06 h OptiMOS&!Power-Transistor Feature % N-Channel Product Summary VDS 30 V % Enhancement mode RDS on 6.4 m" % Logic Level ID 50 A Ph- TO252 -3 % High Current Rating % Excellent Gate Charge x R DS(on) product (FOM) %!Superior thermal resistance
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SPD50N03S2L-06
PN03L06
QS-0Z-2008
SPD50N03S2L-06
PG-TO252-3
marking 113a
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pn0307
Abstract: No abstract text available
Text: SPD50N03S2-07 G OptiMOS&!Power-Transistor Product Summary VDS 30 V Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS on product (FOM) RDS(on) 7.3 m" ID 50 A Ph-TO252-3 %!Superior thermal resistance %!175°C operating temperature % Avalanche rated
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SPD50N03S2-07
Ph-TO252-3
PN0307
QS-0Z-2008
SPD50N03S2-07
pn0307
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02N50C3
Abstract: 02N50 02N5 SPD02N50C3 Q67040-S4570
Text: SPD02N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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SPD02N50C3
P-TO252-3-1
Q67040-S4570
02N50C3
02N50C3
02N50
02N5
SPD02N50C3
Q67040-S4570
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20n03l
Abstract: Q67042-S4106 20n03 20n03l smd ANPS071E IPD20N03L IPU20N03L
Text: IPD20N03L IPU20N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V •Logic Level RDS on 20 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 P- TO252 -3-11 •Superior thermal resistance
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IPD20N03L
IPU20N03L
Q67042-S4050
20N03L
Q67042-S4106
20n03l
Q67042-S4106
20n03
20n03l smd
ANPS071E
IPD20N03L
IPU20N03L
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07n03l
Abstract: 07N03 Q67042-S4105 P- TO252 -3-11 ANPS071E IPD07N03L IPU07N03L Q67042-S4029 DIODE 07n03l
Text: IPD07N03L IPU07N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V •Logic Level RDS on 6.8 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 P- TO252 -3-11 •Superior thermal resistance
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IPD07N03L
IPU07N03L
Q67042-S4029
07N03L
Q67042-S4105
07n03l
07N03
Q67042-S4105
P- TO252 -3-11
ANPS071E
IPD07N03L
IPU07N03L
Q67042-S4029
DIODE 07n03l
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P-TO252
Abstract: P-TO252-3-1 ag 20
Text: Package and Thermal Information P-TO252-3-1 Footprint/Dimensions +0.15 6.5 -0.10 2.3 +0.05 -0.10 A 0.8 ±0.15 1 ±0.1 5.76 GND 0.51 min 4.17 1 0.15 max per side 1.2 3 PC-Board 0.0.15 0.5 +0.08 -0.04 3x 0.75 ±0.1 2.28 4.57 Reflow soldering 0.9 +0.08 -0.04
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P-TO252-3-1
P-TO252
P-TO252-3-1
ag 20
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02n60
Abstract: SPD02N60S5 SPU02N60S5
Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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SPU02N60S5
SPD02N60S5
P-TO252
P-TO251-3-1
P-TO251-3-1
Q67040-S4226
Q67040-S4213
02n60
SPD02N60S5
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02N60S5
Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252
Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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SPU02N60S5
SPD02N60S5
P-TO252
P-TO251-3-1
Q67040-S4226
02N60S5
02N60S5
02n60
P-TO251-3-1
SPD02N60S5
SPU02N60S5
P-TO252
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20n03l
Abstract: IPU20N03L Q67042-S4106 20n03 TO-251 Outline ANPS071E IPD20N03L
Text: IPD20N03L IPU20N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V •Logic Level RDS on 20 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 P- TO252 -3-11 •Superior thermal resistance
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IPD20N03L
IPU20N03L
Q67042-S4050
20N03L
Q67042-S4106
20n03l
IPU20N03L
Q67042-S4106
20n03
TO-251 Outline
ANPS071E
IPD20N03L
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P-TO251-3
Abstract: SPD09P06PL SPU09P06PL SPD09P06PL G
Text: SPD09P06PL SPU09P06PL SIPMOS =Power-Transistor Product Summary Feature P-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated P-TO251-3 VDS -60 V RDS on 0.25 ID -9.7 A P-TO252-3 Drain pin 2 Type Package
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SPD09P06PL
SPU09P06PL
P-TO251-3
P-TO252-3
P-TO251-3
SPD09P06PL
SPU09P06PL
SPD09P06PL G
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