TO2524L Search Results

SUD50NP04-77P

Abstract: TO-252-4L 74439 complementary MOSFET TO252
Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

AP4563AGH-HF

Contextual Info: AP4563AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 ▼ Good Thermal Performance RDS ON ▼ Fast Switching Performance ID ▼ RoHS Compliant & Halogen-Free

Contextual Info: SSDF9504 23A, 40V, RDS ON 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION TO-252-4L The SSDF9504 provide the designer with best combination

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

IC 2025

Abstract: U405DH
Contextual Info: S T U405DH S amHop Microelectronics C orp. Nov,20 2007 ver1.0 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 40V 11A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V - 9A

stu407d

Abstract: STU432S STU419S stm8309 STU432 STM6930A STM6922 STU426S STU3525NL stu309dh
Contextual Info: Selection Guide - Mosfet Product N Channel Product Rds on / m Ohm max Package Configuration Vds Vgs (±) ID PD (W) STF8220 DFN Dual-N 20 12 7.0 2 STA6610 PDIP-8 Dual-N 30 20 7.6 3 23.0 STA6620 PDIP-8 Dual-N 40 20 7.0 3 25.0 STA6968 PDIP-8 Dual-N 60 20 5.3

Contextual Info: AP4578GH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 60V RDS ON ▼ Good Thermal Performance ID ▼ Fast Switching Performance S1 ▼ RoHS Compliant 72mΩ

STU407D

Abstract: U407D TU407D
Contextual Info: S T U407D S amHop Microelectronics C orp. J uly 27 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W )

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

Contextual Info: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) max ID max TC = +25°C • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm 21mΩ @ VGS = 10V

SUD50NP04-77P

Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

Contextual Info: AP4569GH Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 Good Thermal Performance Fast Switching Performance S1 RoHS Compliant G1 40V RDS ON 42m ID 10.5A P-CH BVDSS

Contextual Info: AP4563AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 Good Thermal Performance RDS ON Fast Switching Performance ID RoHS Compliant & Halogen-Free 40V 20m

AOD609

Abstract: aod609 datasheet
Contextual Info: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

To-252-4

Abstract: RD33
Contextual Info: AP4526AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 ▼ Good Thermal Performance RDS ON ▼ Fast Switching Performance ID ▼ RoHS Compliant & Halogen-Free

AP4506

Abstract: AP4506ge AP4506GEH TO252-4L AP4506G AP4506GEH-HF
Contextual Info: AP4506GEH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 30V RDS ON ▼ Good Thermal Performance ID ▼ Fast Switching Performance S1 ▼ RoHS Compliant

Contextual Info: AP4526AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 Good Thermal Performance RDS ON Fast Switching Performance ID RoHS Compliant & Halogen-Free 40V 32m

4506GEH

Abstract: AP4506GEH
Contextual Info: AP4506GEH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 ▼ Good Thermal Performance 30V RDS ON ▼ Fast Switching Performance S1 24mΩ ID G1 S2 9A P-CH BVDSS

CEU4269

Abstract: TO-252-4L
Contextual Info: CEU4269 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES D1/D2 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -12A , RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON).

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: CED4279/CEU4279 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES D1/D2 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON).

STU409DH

Contextual Info: S T U409DH Green Product S amHop Microelectronics C orp. Dec,21,2009 V er1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 40V 18A Max V DS S

Contextual Info: Advanced Power Electronics Corp. AP4563AGH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 20mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 9.6A -40V 36mΩ

Contextual Info: AOD607 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other