TO262AA Search Results

F1S30P06

Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334
Contextual Info: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM

sm58a

Abstract: DO215AA EIA 481-C RGP10E DO-221
Contextual Info: Packaging Information www.vishay.com Vishay General Semiconductor Packaging Information PACKAGING ORDERING CODE PREFERRED ANTI-STATIC PACKAGE CODE PACKAGE CODE 51 PACKAGING DESCRIPTION Bulk 52, 52T P DO-214AA SMB /DO-215AA (SMBG), 12 mm tape, 7" diameter plastic reel

VB40100C

Abstract: J-STD-002 V40100C VF40100C VI40100C VF40100
Contextual Info: New Product V40100C, VF40100C, VB40100C & VI40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

M3045

Abstract: JESD22-B102 JESD22-B106 J-STD-002
Contextual Info: New Product M B,I 3035S & M(B,I)3045S Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

J-STD-002

Contextual Info: New Product V20150S, VF20150S, VB20150S & VI20150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

mbr10120

Contextual Info: MBR20120CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 120 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

Contextual Info: MBR30100CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 100 Volts – 30 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

Contextual Info: MBR20100CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 100 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

MBR20100CE

Contextual Info: MBR20100CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 100 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge&current capability, low VF

Featured Product - TMBS

Abstract: TO-262AB "Schottky Diode" SMPC Trench MOS Schottky Rectifier SMA DO-214AB Vishay 45 V Trench MOS Barrier Schottky Rectifiers SMA SMB diode guide
Contextual Info: Featured Product - TMBS www.vishay.com Vishay General Semiconductor Industry’s First Commercial TMBS® Trench MOS Barrier Schottky Rectifier Series TO-277A SMPC ITO-220AC TO-262AA TO-3PW  Vishay’s patented Trench MOS Barrier Schottky (TMBS®) rectifiers are available with seven voltage ratings from 45 V

MBRF20H150CT

Abstract: JESD22-B102 J-STD-002 MBR20H150CT
Contextual Info: MBR20H150CT, MBRF20H150CT & SB20H150CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA FEATURES ITO-220AB TO-220AB • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop

Contextual Info: New Product V20100S, VF20100S, VB20100S & VI20100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

Contextual Info: VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH3006SHM3 • AEC-Q101 qualified, meets JESD 201 class 1A

Contextual Info: VT2045C-M3, VIT2045C-M3, VT2045CHM3, VIT2045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH3006SHM3

Contextual Info: VT3045C-M3, VIT3045C-M3, VT3045CHM3, VIT3045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: VT6045C-M3, VIT6045C-M3, VT6045CHM3, VIT6045CHM3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: VS-MBRB30.CT-M3, VS-MBR30.CT-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifiers, 2 x 15 A D2PAK FEATURES TO-262 • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Center tap D2PAK and TO-262 packages

Contextual Info: New Product VT2080C, VIT2080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation

Contextual Info: New Product VT4060C, VIT4060C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses

Contextual Info: New Product MI2050C & MI2060C Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-262AA • Lower power losses, high efficiency K • Low forward voltage drop • High forward surge capability

Contextual Info: New Product VT1080S, VIT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation

Contextual Info: New Product VT30L60C, VIT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses

Contextual Info: VT5200, VFT5200, VBT5200, VIT5200 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A FEATURES TMBS TO-220AC • Trench MOS Schottky technology ITO-220AC • Low forward voltage drop, low power losses