TO-277
Abstract: ss12p3
Text: New Product SS12P2L, SS12P3L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Guardring for overvoltage protection
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SS12P2L,
SS12P3L
AEC-Q101
2002/95/EC
2002/96/EC
J-STD-020,
O-277A
2011/65/EU
2002/95/EC.
TO-277
ss12p3
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Untitled
Abstract: No abstract text available
Text: New Product SS5P5, SS5P6 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses
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Original
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PDF
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AEC-Q101
2002/95/EC
2002/96/EC
J-STD-020,
O-277A
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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TO-277
Abstract: V810 to-277A
Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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V8P10
O-277A
AEC-Q101
2002/95/EC
2002/96/EC
J-STD-020,
2011/65/EU
2002/95/EC.
2011/65/EU.
TO-277
V810
to-277A
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is s106 diode
Abstract: No abstract text available
Text: New Product SS10P5, SS10P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Guardring for overvoltage protection
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SS10P5,
SS10P6
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
O-277A
2011/65/EU
2002/95/EC.
is s106 diode
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SS5P4H
Abstract: No abstract text available
Text: New Product SS5P3, SS5P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses
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Original
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PDF
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AEC-Q101
2002/95/EC
2002/96/EC
J-STD-020,
O-277A
2011/65/EU
2002/95/EC.
2011/65/EU.
SS5P4H
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sm58a
Abstract: DO215AA EIA 481-C RGP10E DO-221
Text: Packaging Information www.vishay.com Vishay General Semiconductor Packaging Information PACKAGING ORDERING CODE PREFERRED ANTI-STATIC PACKAGE CODE PACKAGE CODE 51 PACKAGING DESCRIPTION Bulk 52, 52T P DO-214AA SMB /DO-215AA (SMBG), 12 mm tape, 7" diameter plastic reel
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DO-214AA
/DO-215AA
DO-218AB
DO-218AB,
481-C
08-Aug-12
sm58a
DO215AA
EIA 481-C
RGP10E
DO-221
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J-STD-002
Abstract: V12P10
Text: New Product V12P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automatic placement
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V12P10
AEC-Q101
O-277A
2002/95/EC
2002/96/EC
J-STD-020,
11-Mar-11
J-STD-002
V12P10
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SS10PH10
Abstract: J-STD-002 SS10PH9
Text: New Product SS10PH9, SS10PH10 Vishay General Semiconductor High Current Density Surface Mount High Voltage Schottky Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Guardring for overvoltage protection
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SS10PH9,
SS10PH10
J-STD-020
AEC-Q101
O-277A
2002/95/EC
2002/96/EC
11-Mar-11
SS10PH10
J-STD-002
SS10PH9
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J-STD-002
Abstract: No abstract text available
Text: New Product SS5P3, SS5P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses
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Original
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PDF
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AEC-Q101
O-277A
J-STD-020,
2002/95/EC
2002/96/EC
11-Mar-11
J-STD-002
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J-STD-002
Abstract: No abstract text available
Text: New Product SS3P3L, SS3P4L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses
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Original
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PDF
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AEC-Q101
O-277A
J-STD-020,
2002/95/EC
2002/96/EC
11-Mar-11
J-STD-002
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DNP resistors
Abstract: AN1459 V10P10 Ceramic Resistor 10W HAT2175H power capacitor 2.2uH POWER INDUCTOR capacitor 100uF/100V Q1/100PF/50V GT11MSCKE
Text: ISL8107EVAL2Z Application Note June 9, 2009 AN1459.0 Introduction Circuit Setup The ISL8107 is a single-phase PWM controller that operates from 9V to 75V bias supply voltage. The PWM controller drives an external high-side N-Channel MOSFET in a non-synchronous buck converter topology. The ISL8107
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ISL8107EVAL2Z
AN1459
ISL8107
ISL8107
com/data/fn/fn6605
ISL8107EVAL2Z
DNP resistors
V10P10
Ceramic Resistor 10W
HAT2175H
power capacitor
2.2uH POWER INDUCTOR
capacitor 100uF/100V
Q1/100PF/50V
GT11MSCKE
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J-STD-002
Abstract: No abstract text available
Text: New Product SS3P5L, SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses
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Original
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PDF
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AEC-Q101
O-277A
J-STD-020,
2002/95/EC
2002/96/EC
11-Mar-11
J-STD-002
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Untitled
Abstract: No abstract text available
Text: SMP640 ~ SMP6100 Voltage 40 ~ 100 V 6.0 A Surface Mount Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-277A FEATURES Low leakage Low forward voltage drop Super long operating life
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PDF
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SMP640
SMP6100
O-277A
21-May-2012
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Untitled
Abstract: No abstract text available
Text: SMPB1020 ~ SMPB10100 Voltage 20V ~ 100V 10 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-277B Super long operating life Plastic package has Underwriters Laboratory
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PDF
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SMPB1020
SMPB10100
O-277B
O-277B
01-Aug-2013
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Untitled
Abstract: No abstract text available
Text: V8P10 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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Original
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PDF
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V8P10
AEC-Q101
O-277A
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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AS3PD
Abstract: No abstract text available
Text: New Product AS3PD thru AS3PM www.vishay.com Vishay General Semiconductor High Current Density Standard Avalanche Surface Mount Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP Series • Ideal for automated placement • Glass passivated chip junction
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Original
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PDF
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AEC-Q101
J-STD-020,
O-277A
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
AS3PD
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Untitled
Abstract: No abstract text available
Text: V10P20 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS ® eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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V10P20
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-6ESH06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 6 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • For PFC, CRM/CCM, snubber operation K Anode 1
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PDF
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VS-6ESH06-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: V8PM12 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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Original
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PDF
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V8PM12
J-STD-020,
AEC-Q101
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum
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PDF
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SS10PH45
AEC-Q101
O-277A
J-STD-020,
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: V10P45-M3, V10P45HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 5 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available
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Original
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V10P45-M3,
V10P45HM3
J-STD-020,
AEC-Q101
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: New Product SS10P5, SS10P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Guardring for overvoltage protection
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Original
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PDF
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SS10P5,
SS10P6
J-STD-020,
O-277A
AEC-Q101
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: UH4PBC-M3/HM3, UH4PCC-M3/HM3, UH4PDC-M3/HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement
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Original
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PDF
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J-STD-020,
AEC-Q101
O-277A
100electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-4CSH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 2 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • Specific for output and snubber operation
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Original
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PDF
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VS-4CSH02-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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