TO82 PACKAGE Search Results

TO82 TRANSISTOR

Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C

TO82 TRANSISTOR

Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C

2N1016

Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
Contextual Info: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,

Contextual Info: Biphase Modulators 700 - 2000 MHz PM-125/126/127 PM-126 TO-8-2 Features • Variety of Drivers 0.200 TYP (5.08) < —0.100 TYP (2.54) • Amplitude Balance: .Id B T y p P10 • Hermetic TO -8 Package Guaranteed Specifications1 0.200 TYP (5.08) 700 - 2000 MHz

2N2772

Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
Contextual Info: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT

TO82

Abstract: PM-103
Contextual Info: an A M P com pany Biphase Modulators 1 0 -7 5 0 MHz PM-101/102/103 V 2.00 Features • • • TO-8-2 Variety o f Drivers: PM-101; Current, PM-102; ECL, PM-103; TTL Phase Deviation - 1° Typical TO-8 Case <—0.200 TYP 5.08 ^ Guaranteed Specifications* 1

Contextual Info: Afa ü Hybrid Junction 10-500 MHZ HH-110/127 FP-2 • Broad Frequency Range ■ High Isolation — Typically 30 dB ■ Available in Flatpack and TO-8 Packages TO-8-2 PIN 0.015 D IA *0.005 Guaranteed Specifications* From - 5 5 ° C to + 85°C Frequency Range

2N2227

Abstract: 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229
Contextual Info: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home | help | email Alloy Transistors HIGH S.O.A. NPN POWER TRANSISTORS 6-20 AMPERES 2N1015, 2N1016, 2N3429-32

LT019

Abstract: tip410 B0243C LT011S LT019S 182T2C LT011 182T2 TO82 BU312
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 30 Gentron Gentron Gentron Gentron Gentron Gentron Gentron Gentron Gentron Gentron ~~~~~~~ ~entron EUT019R EUT019RS EUT019S LT011 LT011 A LT011RS LT011S LT012 LT012S LT019 LT019R LT019RS LT019S 2N1490

HHS-110

Contextual Info: Hybrid Junction, 10 - 500 MHz HH-/HHS-110/HH-127 V 3.00 Features n n n n n n FP-2 HH-110 Broad Frequency Range Fully Hermetic Package (HHS-110) High Isolation: Typically 30 dB Impedance: 50 Ohms Nominal Input Power: 1 Watt Maximum MIL-STD-202 Screening Available

Contextual Info: f a n A M P ,c o m p a n y Hybrid Junction 10-500 MHz HH/HHS-110/HH-127 V2.00 Features • • • • • • FP-2 P IN 0 . 0 1 5 D IA ± 0 .0 0 5 Broad Frequency Range Fully Hermetic Package HHS-110 High Isolation: Typically 30 dB Impedance: 50 Ohms Nom.

Darlington npn stud mount

Abstract: TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240
Contextual Info: POÜJEREX INC -=11 De J 7Hc14ti51i DGQlflS? 0 | Power Transistors & Darlington Modules T '-3 3 -0 / NPN Power Switching Transistors le Amps y CEO (SUS) (Volts) tf(max) (¡¿sec) Pt(max) Watts Tc (°C) High Safe Operating Area (SOA) 25 40-240 175 1.5 5 25

HH-110

Abstract: HH-127 HHS-110
Contextual Info: HH- / HHS-110 / HH-127 Hybrid Junction, 10 - 500 MHz Rev. V3 Features • • • • • • FP-2 HH-110 Broad Frequency Range Fully Hermetic Package (HHS-110) High Isolation: Typically 30 dB Impedance: 50 Ohms Nominal Input Power: 1 Watt Maximum MIL-STD-202 Screening Available

HH-110

Abstract: HH-127 HHS-110
Contextual Info: Hybrid Junction, 10 - 500 MHz Features • • • • • • HH-/HHS-110/HH-127 V3 FP-2 HH-110 Broad Frequency Range Fully Hermetic Package (HHS-110) High Isolation: Typically 30 dB Impedance: 50 Ohms Nominal Input Power: 1 Watt Maximum MIL-STD-202 Screening Available

PM-103-PIN

Abstract: PM-103 PM-101
Contextual Info: Biphase Modulators 10-750 MHz PM-101/102/103 • Variety of Drivers: PM-101; Current, PM-102; ECL, PM-103; TTL ■ Phase Deviation — 1° Typical ■ TO-8 Case TO-8-2 0.250 MIN 0.187 M A X <«•«> 4.7 Guaranteed Specifications* (From - 55°C to + 85°C)

2N5034 package

Abstract: 2N5034 180T2A B0243A TO-219AA 2SC2491 sanken 2SC2825 2N5035 2SC1777 B0199
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -

UPD789166GB-8ES

Abstract: uPD789166
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD789166, 789167, 789176, 789177 8-BIT SINGLE-CHIP MICROCONTROLLERS The µPD789166, 789167, 789176, and 789177 are products of the µPD789167 and 789177 Subseries smallscale package, general-purpose applications in the 78K/0S Series.

nec 2Sb617

Abstract: 2SA1102 SANKEN 2SD371-0 sanken 2sa1102 LT019 181T2B Gentron 2SA808A LT019S 2SB617
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (Hz) (A) (8) Max (Ohms) 60 60 60 60 65 65 65 65 65 65 65 65 75 100 100 100 100 100 100 40 40 40 40 40 40 40 50 50 50 60 60 22 40 50 85 85

Contextual Info: m an A M P company Three-Way Power Divider 3 - 700 MHz DS-328 TO-8-2 Features • 0.250 MIN 6.35 0.200 TYP (5.08) <— 0.100 TYP (2.54) • 0.4 dB Typical Midband Insertion Loss • 28 dB Typical Midband Isolation 0.220 MAX » -(5 .5 9 ) P10 1.2:1 Typical Input VSWR

DS-109

Abstract: DS-319
Contextual Info: Two-Way Power Divider 10 - 500 MHz DS-109/319 V2.00 FP-2 Features ● ● ● 1° Phase Balance Max 35 dB Typical Midband Isolation 1.1 Typical Midband VSWR Guaranteed Specifications* MODEL PIN 0.015 DIA ±0.005 0.038 ±0.13 8 PLACES 10-500 10-500 MHz 0.6

Contextual Info: A fa Flat pack Three-Way Power Divider 3-700 MHz • 0 .4 dB Typical Midband Insertion Loss ■ 28 dB Typical Midband Isolation ■ 1.2:1 Typical Input V S W R DS-328 TO-8-2 Guaranteed Specifications* From - 5 5 °C to + 8 5 ° C Frequency Range Insertion Loss

JH-114

Abstract: JH-133
Contextual Info: Quadrature Hybrid 20 - 40 MHz JH-114/133 V2.00 FP-2 Features ● ● ● ● ● ● ● Octave Bandwidth 3° Maximum Phase Deviation from 90° Low loss: 0.5 dB Max. Impedance: 50 Ohms Nom. Input Power: 5 W. Max. @ 25°C Derated to 1 W. @ 100°C Typical Phase Linearity: 3° from Straight Line

TO82

Abstract: DS-331
Contextual Info: Two-Way Power Divider 750 - 1500 MHz DS-331 V2.00 TO-8-2 Features ● 2° dB Phase Balance Typical ● 20 dB Typical Midband Isolation ● 1.5:1 Typical Midband VSWR, Input Guaranteed Specifications* Frequency Range From -55°C to +85°C 750 - 1500 MHz Insertion Loss (Less coupling)

TO82

Abstract: 8087 CH-138
Contextual Info: 11 dB Bi-directional Coupler 10 - 500 MHz CH-138 V2.00 TO-8-2 Features ● Constant Coupling — Within ±0.5 dB Max Guaranteed Specifications* Bottom of Case is AC Ground. Dimensions in are in mm. Unless Otherwise Noted: .xxx = ±0.010 (.xx = ±0.25)