TO92 PNP Search Results

to92 darlington

Abstract: nte232
Contextual Info: NTE232 Silicon PNP Transistor Darlington Amplifier, Preamp Description: The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type package designed for preamplifier input applications where high impedance is a requirement.

NTE2341

Abstract: npn darlington TO92 NTE2342
Contextual Info: NTE2341 NPN & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.

NTE293

Abstract: pnp to92
Contextual Info: NTE293 NPN & NTE294 (PNP) Silicon Complementary Transistors Audio Amplifier and Driver Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications.

NTE6402

Abstract: "Programmable Unijunction Transistor" unijunction programmable unijunction transistor
Contextual Info: NTE6402 Programmable Unijunction Transistor PUT Description: The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and

3155 power transistor

Abstract: ZTX214C equivalent ZTX214C DSA003764
Contextual Info: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 – MARCH 94 FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO

NTE12

Abstract: NTE11
Contextual Info: NTE11 NPN & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed for use in low–frequency output amplifier, DC converter, and strobe applications.

IC 386

Abstract: MPSA94
Contextual Info: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR MPSA94 ISSUE 2 – MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage

BF 235

Abstract: plc em 235 ZTX1147 ZTX1147A DSA003763
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1147A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -12V * 4 Amp Continuous Current * 20 Amp pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

150e-3

Abstract: bf 494 transistor ZTX1149A
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1149A ISSUE 1 - January 1997 FEATURES * VCEO = - 25V * 3 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX750 ZTX751 ISSUE 3 – JULY 2005 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL ZTX750 ZTX751

Contextual Info: Not Recommended for New Design Please Use ZTX758 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR MPSA94 ISSUE 2 – MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

ic 494

Abstract: ZTX1151A
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1151A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low Saturation voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: DISCONTINUED PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FXTA92 ISSUE 1 – MARCH 94 FEATURES * 300 Volt VCEO APPLICATIONS * Telephone dialler circuits B C REFER TO MPSA92 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT

Contextual Info: DISCONTINUED PLEASE USE ZXT553 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT553 ISSUE 1 – FEB 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX553 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

NTE2370

Contextual Info: NTE2369 NPN & NTE2370 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX549 ZTX549A ISSUE 1 – MARCH 94 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX758 ISSUE 1 – APRIL 94 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage

ztx753

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX752 ZTX753 ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX752 ZTX753 UNIT

Contextual Info: ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX552 ZTX553 UNIT Collector-Base Voltage

BC369

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC369 ISSUE 1 – SEPT 93 FEATURES * 20 Volt VCEO * 1 Amp continuous current * Ptot= 800 mW E C B TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage

FXT755

Abstract: ZTX755 DSA003758
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT755 ISSUE 1 – FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX755 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

NTE2355

Abstract: NPN Transistor TO92 40V 200mA NTE2356
Contextual Info: NTE2355 NPN & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors Features: D Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit

NTE2368

Contextual Info: NTE2367 NPN & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit

Contextual Info: DISCONTINUED PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT555 ISSUE 1 – MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX555 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT