TOP*254 PN Search Results

C01005

Contextual Info: i 2PiHHl-27-33 O K I electronic components OCS35_ Optical PNPN Switches G E N E R A L DESCRIPTION The O CS35 is an optical PNPN switch, com bining an infrared light emitting diode arid a PNPN elem ent p h oto th y rislor in a single 6-pin plastic package. The d ev ice is capable of wi fhstanding

CXO-10N

Contextual Info: PN STATEK I CXO Oscillator 614 kHz to 70 MHz Actual Size ULTRA-LOW PROFILE 1.3 mm MINIATURE SURFACE MOUNT CRYSTAL OSCILLATOR Side View FEATURES □ Designed for surface mount applications using infrared, vapor phase, wave solder or epoxy mount techniques

BC446

Contextual Info: ne. ,O 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 PNP SILICON PLANAR EPITAXIAL TRANSISTORS ^ Ho' ^' Q UL> 448, A, o BC 450, A, B TO-92 Plastic Package General Purpose High Voltage Transistors.

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

22 pin ccd

Abstract: MB40568 2SA933 LE128 MB40568P-SK
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET ASSP DS04-28203-4E Image Processing BIPOLAR A/D Converter 1-channel, 8-bit low-power model with built-in clamp circuit MB40568 • DESCRIPTION The MB40568 is an all-parallel (flash type) A/D converter for 8-bit video applications, and uses high-speed bipolar

Cutler-Hammer 1351b-6511

Abstract: 1450B-6511 1351B-6501 8251 8562B 6150A 1351B 05E-17
Contextual Info: Photoelectric Sensors 50 Series 1 August 2007 PG.05E.08.T.E Customize These High Performance Sensors with Interchangeable Outputs and Logic Functions 50 Series Photoelectric Sensors Contents Overview . . . . . . . . . . . . . . . . . . . . . . Model Selection, Sensors . . . . . . . . .

slim power sata pinout

Abstract: Mini USB 8-pin B-Type CON HDR 2663 HQCD-030-06 JST MSA QSH-060-01-L-D-A serdes hdmi optical fibre SO-0165-04-01-02 XFP extender BOARD HCM 582 circuit
Contextual Info: CABLE SYSTEMS CSF-210 AUGUST 2010 END-TO-END CABLE SYSTEM SOLUTIONS Product Solutions Whether you need quick-turn, off-the-shelf cable solutions or custom cable solutions, Samtec offers a full line of components and systems that will address your specific needs.

Cutler-Hammer type m RELAY

Abstract: CSMS3F3CY1602 multibeam L1 banner 1555AD6517 1455A
Contextual Info: Photoelectric Sensors 55 Series 1 August 2007 PG.05E.07.T.E High Optical Performance and a Built-In Swivel Bracket for Easy and Precise Alignment 55 Series Photoelectric Sensors Contents Overview . . . . . . . . . . . . . . . . . . . . . . Model Selection, Sensors. . . . . . . .

IEC-60286-3 0402

Abstract: vishay melf WSL2010 WSL2512 WSR2 0.05
Contextual Info: Surface Mount Resistor Packaging Vishay Resistor Packaging FILM CHIP PACKAGING BLISTER TAPE ON REEL BULK FEEDING MAGAZINE ACC. IEC 60286-3 SIZE TAPE WIDTH 0201 0402 0603 0805 1206 1210 DIAMETER PIECES/ REEL 8 mm 180 mm/7" 10 000 P0/RT7 Papertape 330 mm/13"

2SA933

Abstract: LE128 MB40568 MB40568P-SK transistor 22p
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET ASSP DS04-28203-4E Image Processing BIPOLAR A/D Converter 1-channel, 8-bit low-power model with built-in clamp circuit MB40568 • DESCRIPTION The MB40568 is an all-parallel (flash type) A/D converter for 8-bit video applications, and uses high-speed bipolar

MB40568

Abstract: 2SA933 LE128 MB40568P-SK 22p capacitor
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET ASSP DS04-28203-4E Image Processing BIPOLAR A/D Converter 1-channel, 8-bit low-power model with built-in clamp circuit MB40568 • DESCRIPTION The MB40568 is an all-parallel (flash type) A/D converter for 8-bit video applications, and uses high-speed bipolar

KA 2717

Abstract: MDC2125
Contextual Info: b B L T E S M G l G l b S T Q7T M M O T b Order this data sheet by MDC2125/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC2125 SMALLBLOCK Products M o to ro la P referred D evice High Voltage Level Shifter This monolithic, PNP common base, high voltage transistor array is designed to

Contextual Info: NSBA115TF3 Digital Transistors BRT R1 = 100 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

Contextual Info: NSBA123TF3 Digital Transistors BRT R1 = 2.2 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

Contextual Info: NSBA123TF3 Digital Transistors BRT R1 = 2.2 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

EG4401S-AR

Abstract: EG4401 upc5023 eg4401s LCD EG4401S MIL-202E-103B PNMN0000-AC1-4 52-SOOOOOOO EG4401* dot vxsc
Contextual Info: Spec Code S F* E C I F* I C A TT I O N S C -010006400 S E G 4 4 0 1 S —A R S E I S h e e t Item No I t e m 1 Basic Specification K Outline Dimensions 1 1 1 S 2 Absolute Maximum Ratings 2 1 - C0000001 3 Electrical Characteristics 3 3 3 3 3 1 2 3 4 5 - 010006400

68827

Abstract: KG15
Contextual Info: Issued September 2000 232-5058 Data Pack G Anti-vibration mountings Data Sheet This data sheet covers the following RS stock nos: Ring and bush mounts Isolator mounts Pneumatic mounts Machine mounts 688-262 to 688-414 688-420 to 688-470 688-486 to 688-509

FL4H

Abstract: LM2937 LM2937ET-10 LM2937ET-12 LM2937ET-15 LM2937ET-5 LM2937ET-8 T03B
Contextual Info: LM2937 National Semiconductor LM2937 500 mA Low Dropout Regulator General Description The LM2937 is a positive voltage regulator capable of sup­ plying up to 500 mA of load current. The use of a PNP power transistor provides a low dropout voltage characteris­

LS211

Contextual Info: LS211 49 Port LAN Switching Element Features Description • Single chip, Fast Ethernet switching fabric The LS211 is a 49 port Fast Ethernet, packet switching fabric. It integrates a 100 Mbit per port, full duplex, non-blocking, crossbar switch and switch

2N5416UA

Abstract: 2N54115 2N5416U4 2N5415UA 2N5416 2N5415 MARKING SMD pnp TRANSISTOR ec 2N5416S 2N5415S 2N5415 JANTXV
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 1 September 2010. MIL-PRF-19500/485M 1 June 2010 SUPERSEDING MIL-PRF-19500/485L 26 January 2009 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER

transistor U4

Abstract: 2N5415 2N5416U4
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 10 September 2013. MIL-PRF-19500/485N 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER

Contextual Info: ASSP tmBgß Praaessing BIPOLAR . 1-channel, 8-bit low-power model with built-in clamp circuit • DESCRIPTION The MB40568 is an all-parallel (flash type) A/D converter for 8-bit video applications, and uses high-speed bipolar process technology for low-power consumption and high-speed conversion.

Contextual Info: MUN5135, DTA123JE, DTA123JM3, NSBA123JF3 Digital Transistors BRT R1 = 2.2 kW, R2 = 47 kW PNP Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

Contextual Info: MUN5135, DTA123JE, DTA123JM3, NSBA123JF3 Digital Transistors BRT R1 = 2.2 kW, R2 = 47 kW PNP Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor