TOP 246 YN Search Results

Contextual Info: NL27WZ126 Dual Buffer with 3-State Outputs The NL27WZ126 is a high performance dual noninverting buffer operating from a 2.3 V to 5.5 V supply. • • • • • • • • • Extremely High Speed: tPD 2.6 ns typical at VCC = 5 V Designed for 2.3 V to 5.5 V VCC Operation

top 246 yn

Abstract: Three Digit Numeric Displays top 248 yn LB-6740 LB-6810 "Two Digit Numeric Displays" MD246 Mn 1016 TOP 242 yn
Contextual Info: Numeric displays, two digit Numeric displays, two digit The LB series are small, high luminance two and three digit numeric displays. This chapter contains the data sheets for the two digit displays. These devices are suitable for use in clock or measuring equipment displays. They are available in four colors and range in size from 6

MT1257-15

Abstract: MT1257 MT1257-12 iris mote DNA 1005 1N3064 MARKING t06 BF 246 C equivalent M41256 MT125
Contextual Info: MIL-M-38510/24É 13 JANUARY 1987 MILITARY SPECIFICATION M I C R O C I R C U I T S , DIGITAL, NMOS, R AND OM A C C E S S MEM OR Y DRAM , 26 2,144 BIT DYN AMIC MONOLITKIC SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d for us e by all D e p a r t ­

079J

Contextual Info: 積層ハイロスインダクタ MULTILAYER FERRITE CHIP BEADS BK SERIES OPERATING TEMP. –55V+125C 特長 FEATURES YInternal silver printed layer creates a closed circuit which acts as a magnetic shield minimizing heat generation and crosstalk. YNo need for grounding provides greater circuit design flexibility.

Contextual Info: Panasonic For Audio Equipment MN6479A D/A Converter for Digital Audio Equipment • Overview ■ Pin Assignment The M N6479A is a CM OS digital-to-analog converter by noise shaping technology and is designed for PCM digital audio equipm ent. It features a built-in 8 tim es

Contextual Info: SANYO S E MI CONDUCT OR CORP b3E ]> 7TT7D?b GQ127H7 Q4Ü « T S A J O rdering nu m b er: EN3 9 1 6 MLC74HC137M No.3916 C M O S H ig h -S p e e d S ta n d a r d Logic l-of-8 Decoder/Demultiplexer with Address Latch F eatu res • T h e M L C 7 4H C 137 M decodes a th r e e -b it a d d re s s to one-of-eight active-low o u tp u ts . It h a s la tc h e s on

M514800A

Abstract: m514800
Contextual Info: HM514800A/AL Series HM51S4800A/AL Series Preliminary 52 4,28 8-w o rd x 8 -b it D y n a m ic R a n d o m A c ce ss M em ory T he H itach i H M 514800A are C M O S d ynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM 514800A have realized higher density, higher

si9928

Abstract: 13S8
Contextual Info: T e m ic siiiconix_ SÌ9928DY Dual Enhancement-Mode MOSFETs N- and P-Channel Product Summary V Ds ( V ) N -C hannel 20 P-Channel -2 0 r DS(on) (Q ) I d (A) 0.05 (a) VGs = 4.5 V ± 5 .0 0.06 C«’ V GS = 3.0 V ± 4 .2 0.08 <S) V q s = 2.7 V

Contextual Info: CY54/74FCT245T 8-BIT TRANSCEIVER *0 CYPRESS FEATURES • Function, Pinout and Drive Compatible with the FCT and F Logic ■ Power-off disable feature ■ Matched Rise and Fall times ■ FCT-C speed at 4.1 ns max. Com'l FCT-A speed at 4.6 ns max. (Com'l)

K4B4G0846D

Abstract: K4B4G0446D-MC DDR3-1866 RDIMM SPD JEDEC K4B4G0846D-MC
Contextual Info: Rev. 1.3, Jul. 2011 M392B5773DH0 M392B5273DH0 M392B5270DH0 M392B1K70DM0 M392B1K73DM0 240pin VLP Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

Contextual Info: Rev. 1.3, Jul. 2011 M392B5773DH0 M392B5273DH0 M392B5270DH0 M392B1K70DM0 M392B1K73DM0 240pin VLP Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

ECG1361

Abstract: Philips electrolytic 132 cm3x
Contextual Info: PHILIPS E C G INC bt.S3T2ô 00DS24D 7 17E D ECG ECG 1361 12 W Bridge BTL A F Power Am p Se m ico n d u cto rs Features • Power output: 12 W (typ) « Low number of external components: 1 electrolytic capacitor, 2 polyester film capacitors • Built-in muting circuit

K4B4G0846D

Abstract: K4B4G0446D-MC k4b4g0446d DDR3-1866 RDIMM SPD JEDEC ddr3 so dimm 204 pin DDR3 DIMM 240 pin names cma 1390 rda 1846 K4B4G0846D-MC Design Guide for DDR3-1866
Contextual Info: Rev. 1.21, Jan. 2011 M392B5773DH0 M392B5273DH0 M392B5270DH0 M392B1K70DM0 M392B1K73DM0 240pin VLP Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

Contextual Info: CY54/74FCT245T 8-BIT TRANSCEIVER 5 * CYPRESS FEATURES • Function, Pinout and Drive Compatible with the FCT and F Logic ■ Power-off disable feature ■ Matched Rise and Fall times ■ FCT-C speed at 4.1 ns max. Com11 FCT-A speed at 4.6 ns max. (Com11)

K4B4G0446D-MC

Abstract: k4b4g0446d M393B5270DH0
Contextual Info: Rev. 1.3, Jul. 2011 M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

Contextual Info: M O S E L V t T E L IC V53C100N HIGH PERFORMANCE, 3.3 VO LT 1M X 1 B IT F A S T P A G E M O D E C M O S D YN A M IC R A M 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, 0CAA) 35 ns 40 ns 45 ns Max. CAS Access Time, (*CAC)

Contextual Info: Rev. 1.3, Jul. 2011 M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

K4B4G0846D

Abstract: K4B4G0446D-MY K4B4G0846D-MY K4B2G0446D k4b4g0446d
Contextual Info: Rev. 1.1, Aug. 2011 M392B5773DH0 M392B5273DH0 M392B5270DH0 M392B1K70DM0 M392B1K73DM0 240pin VLP Registered DIMM based on 2Gb D-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

Contextual Info: Rev. 1.1, Aug. 2011 M392B5773DH0 M392B5273DH0 M392B5270DH0 M392B1K70DM0 M392B1K73DM0 240pin VLP Registered DIMM based on 2Gb D-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

pec 810

Abstract: SY69952
Contextual Info: V OC-3/STS-3 CLOCK REC OVERING TRAN SCEIVER SYNERGY SY69952 SEMICONDUCTOR FEATURES DESCRIPTION • A complete ATM compatible single chip Transmitter & Receiver S yn e rg y's S Y 69 95 2 co n ta in s fu lly Integrated tra n s m itte r and re c e iv e r fu n c tio n s d e s ig n e d to p ro vid e c lo ck re co ve ry

41000BJ

Contextual Info: MITSUBISHI LSIs MH1M36BJ-7, -8,-10 3 7 7 4 8 7 3 6 - B IT 1 0 4 8 5 7 6 - W 0 R D B Y 36-B IT D YN A M IC RAM DESCRIPTION This is consists o f th irty -six industry standard 1M x 1 b it PIN CONFIGURATION (TOP VIEW) dynam ic RAMs in SOJ. The m ounting o f SOJ on a single in-line package p ro ­

M393B1K70DH0

Abstract: M393B5273DH0 k4b4g0446d M393B5270DH0 M393B5773DH0 M393B1K73DH0-YF8 M393B1K73DH0 ddr3l pcb design guide M393B2K70DM0 K4B2G0446D-HY
Contextual Info: Rev. 1.0, Sep. 2010 M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin Registered DIMM based on 2Gb D-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

4035BF

Contextual Info: rr7 ^ J Ë SGS-THOMSON s [ U g « § H C C / H C F 4 0 3 5 B 4-STAGE PARALLEL IN/PARALLEL OUT SHIFT REGISTER . 4-STAGE CLOCKED SHIFT OPERATION • SYNCHRONOUS PARALLEL ENTRY ON ALL 4 STAGES ■ JK INPUTS ON FIRST STAGE ■ ASYNCHRONOUS TRUE/COMPLEMENT CON­

M393B2K70DM0

Abstract: k4b4g0446d M393B5270DH0 M393B5773DH0 78FBGA M393B1K70DH0 M393B1K73DH0 M393B5273DH0
Contextual Info: Rev. 1.2, Aug. 2011 M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin Registered DIMM based on 2Gb D-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND