TOR 300 350 Search Results

LH0036

Abstract: LH0002 LH0036CG S6BR2 LH0036C
Contextual Info: LH0036/LH0036C National mm Semiconductor LH0036 Instrumentation Amplifier General Description Features The LH0036C is a micro power instrumentation amplifier de­ signed tor precision differential signal processing. Extremely high accuracy can be obtained due to the 300 M il Input

IR 30DF

Contextual Info: Bulletin 12103 rev. B 07/97 International TOR Rectifier SAFEIR Series 30dps. GLASS PASSIVATED PLASTIC RECTIFIER IF av = 30 Amp 'fsm • 150° C Tj operation = 300 Amp VRRM UP t° 1200V • Glass Passivated chip junction • Low forward voltage drop • High Current Capabilities

2N8050

Abstract: 2n6057 8050 npn 2n60s0 ns5 transistor Transistor Q 8050 2N6058 MOTOROLA transistor SS 8050 2n6052
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6050 Darlington Complementary Silicon Power IVansistors thru . . . designed for general-purpose amplifier and low frequency switching applications. • High D C Current Gain — h p E = 3500 Typ @ lc = 5.0 Adc • Collector-Emitter Sustaining Voltage — @ 100 mA

1505cma

Abstract: IRK 330
Contextual Info: Bulletin 127090 International IÖ R Rectifier IRK. SERIES STANDARD RECOVERY DIODES MAGN-A-pak Power Modules Features • 250A 270A 320A High voltage ■ E lectrically isolated base plate ■ 3500 V RMSis o la tin g vo lta g e rev. A 09/97 ■ Industrial standard package

RK-71

Contextual Info: Bulletin 127132 rev. D 09/97 International lO R Rectifier i r k .71 .91 s e r i e s THYRISTOR/DIODE and NEWADD-A-pak Power Modules , THYRISTOR/THYRISTOR Features • Electrically isolated: DBC base plate ■ 3500 V RMg isolating voltage I Standard JED EC package

IRK 160

Contextual Info: Bulletin 127141 rev. C 09/97 International M R Rectifier IRK.91 SERIES NEWADD-A-pak Power Modules STANDARD DIODES Features • Electrically isolated: DBC base plate ■ 3500 VRMg isolating voltage ■ Standard JED EC package ■ Simplified mechanical designs, rapid assembly

zt751

Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
Contextual Info: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30

Contextual Info: Bulletin 127134 rev. B 09/97 International iö R Rectifier irku /V 41 ,56 s e rie s THY R IS TO R /TH Y R ISTO R NEW ADD-A-pak Power Modules Features • ■ Electrically isolated: DBC base plate 3500 VRMg isolating voltage I ■ Standard JED EC package

TP-108

Contextual Info: A fc RF Transformer 350-1125 MHz • ■ ■ ■ TP-108 50 Ohms Unbalanced to Dual 100 Ohms Unbalanced or 200 Ohms Balanced Low Insertion Loss Accessible Center Tap for DC Bias FP-1 0.015 1 0.0 05 OIA 0.36 ±0.13( Guaranteed Specifications* (From - 5 5 ° C to + 8 5 °C )

Contextual Info: Flatpack Quadrature Hybrid 175-350 MHz • Octave Bandwidth ■ Low VSW R — 1.2:1 Typical JH-136 C p .O PIN 0.015 DIA ¿0 .00 5 <0.38 *0.13 • a PLACES Guaranteed Specifications4 From - 55°C to +85°C) D im e n s io n s in ( ) are in m m. Frequency Range

Contextual Info: Bulletin 127135 rev.C 09/97 International i ö r Rectifier irku /V 7 1 ,91 s e r ie s NEWADD-A-pak Power Modules THYRISTOR/THYRISTOR Features • ■ Electrically isolated: DBC base plate 3500 VRMg isolating voltage ■ ■ Standard JED EC package Simplified mechanical designs, rapid assembly

Motorola transistor smd marking codes

Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
Contextual Info: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases

P2600BA70

Abstract: 380 volt 50 hz 50 amp triac TRIAC FT 1017 P0300EA70 triac 230v 50hz 5kw P3100EA70 P2300EA70 Siebe PP-2046 P3203AA P3100BA
Contextual Info: TECCOR ELECTRONICS, INC. A SIEBE COMPANY TO-92 1801 H U R D D R IV E IR V IN G , T E X A S 7 5 0 3 8 -4 3 8 5 P H O N E 2 1 4 /5 8 0 -1 5 1 5 FAX 2 1 4 /5 5 0 -1 3 0 9 MT1 MT2 DO -214AA M odified TO-220 SIDACtor 27 - 540 volts G en e ral In fo rm a tio n

datasheet of ic 555

Abstract: datasheet ic 555 IC 555 800Volts
Contextual Info: SC35VB80 REVERSE VOLTAGE - 800Volts FORWARD CURRENT - 35Amperes GLASS PASSIVATED 3 PHASE BRIDGE RECTIFIERS FEATURES SCVB ●Surge overload -350 amperes peak ●Low forward voltage drop 1.417 MAX 36.0 1.412 MAX (29.0) .217(5.5) .177(4.5) ●Mounting position :Any

scvb

Abstract: datasheet ic 555 datasheet of ic 555 IC 555
Contextual Info: SC35VB160 REVERSE VOLTAGE - 1600Volts FORWARD CURRENT - 35Amperes GLASS PASSIVATED 3 PHASE BRIDGE RECTIFIERS FEATURES SCVB ●Surge overload -350 amperes peak ●Low forward voltage drop 1.417 MAX 36.0 1.412 MAX (29.0) .217(5.5) .177(4.5) ●Mounting position :Any

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

SC35VB160-G

Contextual Info: Glass Passivated 3 Phase Bridge Rectifiers SC35VB160-G REVERSE VOLTAGE - 1600Volts FORWARD CURRENT - 35Amperes "-G" : RoHS Device FEATURES SCVB - Surge overload -350 amperes peak - Low forward voltage drop - Mounting position :Any .079 2.0 .047(1.2) - Weight: 37g

Contextual Info: BURR-BROWN 150108 150109 Isolated VOLTAGE-TO-FREQUENCY CONVERTER FEATURES APPLICATIONS • ISOLATED VFC IN HERMETIC DIP • HIGH-VOLTAGE AC RATINGS: IS0108:1500Vrms, IS0109:3500Vrms • HIGH TRANSIENT IMMUNITY: 10kV/^s • LOW BARRIER LEAKAGE CURRENT: 0.5pA

5f transistor

Contextual Info: P » » .I « T O W PJB772/PJB772S PNP Epitaxial Silicon Transistor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to PJD882 • PW 10#s,Duty Cycle 50% • Pulse Test PW 350#s,Duty Cycle 2% TO-92 TO-126 PJB772S PJB772 ABSOLUTE MAXIMUM RATINGS Ta = 25 °C

Contextual Info: SC35VB80 REVERSE VOLTAGE - 800Volts FORWARD CURRENT - 35Amperes GLASS PASSIVATED 3 PHASE BRIDGE RECTIFIERS FEATURES SCVB ●Surge overload -350 amperes peak ●Low forward voltage drop ●Mounting position :Any 1.417 MAX 36.0 1.142 MAX (29.0) .256(6.5) .217(5.5)

Contextual Info: SC35VB160 REVERSE VOLTAGE - 1600Volts FORWARD CURRENT - 35Amperes GLASS PASSIVATED 3 PHASE BRIDGE RECTIFIERS FEATURES SCVB ●Surge overload -350 amperes peak ●Low forward voltage drop ●Mounting position :Any 1.417 MAX 36.0 1.142 MAX (29.0) .256(6.5)

SCVB weight

Contextual Info: Glass Passivated 3 Phase Bridge Rectifiers SC35VB80-G REVERSE VOLTAGE - 800Volts FORWARD CURRENT - 35Amperes "-G" : RoHS Device FEATURES SCVB - Surge overload -350 amperes peak - Low forward voltage drop - Mounting position :Any 1.417 MAX 36.0 .827 MAX (21.0)

TF 350 C

Contextual Info: jtà i M a n A M P <c o m p a n y E-Series Surface Mount Mixer 350 - 2000 MHz EMRS-11F V3.00 Features • • • SM-1 LO Power: +7 dBm Up to +1 dBm RF Surface Mount Specifications @ 25°c Frequency Range RF LO IF 350 - 2000 MHz 350 - 2000 MHz DC - 400 MHz

transistor mje 350

Abstract: transistor mje mje 350 mje 340
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 CEN TO126 MARKING: CEN 350 Designed For Use Line - Operated Applications Such As Low