TOSHIBA 1N DIODE Search Results

In5062

Abstract: in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode
Contextual Info: 9097250 TOSHIBA CDI S C R E T E /O P T O TOSHIBA -CDISCRETE/OPTOJ 9 0D 16494 DE § /3 □OlkMTM 7 Diodes Switching Diode DO-35) VB(V) lo(MA) 2 5 (3 0 ) 50 1N4152 1N4150 1N 4151 1N 4153 \ 150 200 70 1N4150 1N 4606 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149

TOSHIBA 1N DIODE

Abstract: TFR1
Contextual Info: T O SH IB A TFR1NJFR1T TOSHIBA FAST RECOVERY DIODE TFR 1N SILICON DIFFUSED TYPE TFR1T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • Average Forward C urrent : I f (AV)~0.5A • • Repetitive Peak Reverse Voltage : V r r ]v[= 1000, 1500V Reverse Recovery Time

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

1ss293

Contextual Info: TOSHIBA 1SS293 1SS29 3 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING. 4.2MAX Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : I r = 5/¿A (Max.) Small Package 0.55MAX 0.4 MAXIMUM RATINGS (Ta = 25°C)

100FXFG13

Contextual Info: TO SH IB A 100FXFG13,100FXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1nnFYFGi3 1nnpypHiq •v w ■ w m. m ' w ■v g m ^ur w ■ ^ m ■ ■ ■ ■ w Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • Repetitive Peak Reverse Voltage «» n v ±-

Contextual Info: TO SH IB A 50FXFG13,50FXFH 13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE SHFYFfil 3 5Î1FYFH1 3 v v • ^ m ■ 'w ■ mm g v ^ m ■ ■■ ■« r Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 3 - 0 8 .4 ± 0.5 • Repetitive Peak Reverse Voltage : V r r ]V[ = 3300V

1SS418

Contextual Info: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF 3 = 0.23V (typ.)@ IF = 5mA CATHODE MARK • Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 35 V Reverse voltage

1ss422

Contextual Info: 1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Unit: mm • Low forward voltage VF = 0.23 V typ. @IF = 5 mA • Small package suitable for mounting on a small space Maximum Ratings (Ta = 25°C) Characteristic

1SS416

Contextual Info: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 A Characteristic Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200

1SS418

Contextual Info: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF 3 = 0.23V (typ.)@ IF = 5mA CATHODE MARK • Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

1SS422

Contextual Info: 1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Unit: mm Low forward voltage VF = 0.23 V typ. @IF = 5 mA • Small package suitable for mounting on a small space Absolute Maximum Ratings (Ta = 25°C) Characteristic

1SS416

Contextual Info: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 Symbol Rating Unit 0.07 M A Maximum peak reverse voltage VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200 mA Average forward current

HN1V02H

Contextual Info: HN1V02H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V02H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. • High Q: Q = 200 (min) • Including two devices in FM8 package (flat pack mini 8 pin)

Contextual Info: TOSHIBA 100FXG13,100FXH13 TOSHIBA FAST RECOVERY DIODE m n F Y fii^ • w ■ m m ■ SILICON DIFFUSED TYPE m n F Y H i3 w ar g ■ ^ur ■ m ^ m m m m tr Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 3 - 0 8 . 4 ± 0.5 • Repetitive Peak Reverse Voltage : V r r ]V[ = 3000V

1SS306

Contextual Info: 1SS306 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS306 Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. + 0.2 • • • • Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp 2 —0.90V (Typ.)

HSOP20

Abstract: TA7289F TA7289P "pwm Solenoid Driver"
Contextual Info: TA7289P/F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7289P,TA7289F PWM STEPPING MOTOR DRIVER The TA7289P, TA7289F are PWM solenoid driver designed especially for use high efficiency stepping motor control. It consist of 1.5A peak current drive capable output full bridge

HSOP20

Abstract: TA7289F TA7289P
Contextual Info: TA7289P/F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7289P,TA7289F PWM STEPPING MOTOR DRIVER The TA7289P, TA7289F are PWM solenoid driver designed especially for use high efficiency stepping motor control. It consist of 1.5A peak current drive capable output full bridge

PWM solenoid driver

Abstract: HSOP20 TA7289F TA7289P TA7289 "pwm Solenoid Driver"
Contextual Info: TA7289P/F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7289P,TA7289F PWM STEPPING MOTOR DRIVER The TA7289P, TA7289F are PWM solenoid driver designed especially for use high efficiency stepping motor control. It consist of 1.5A peak current drive capable output full bridge

Contextual Info: T O SH IB A 5DL2CZ47A,5FL2CZ47A,5GL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2CZ47A, 5FL2CZ47A, 5GL2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Repetitive Peak Reverse Voltage v RRM •

PWM solenoid driver

Abstract: 200H TA7289F TA7289P H bridge pwm TA72 L1323 "pwm Solenoid Driver"
Contextual Info: TOSHIBA TA7289P/F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7289P, TA7289F PWM STEPPING MOTOR DRIVER The TA7289P, TA7289F are PWM solenoid driver designed especially for use high efficiency stepping motor control. It consist of 1.5A peak current drive capable output full

Contextual Info: TA7289P/F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7289P,TA7289F PWM STEPPING MOTOR DRIVER The TA7289P, TA7289F are PWM solenoid driver designed especially for use high efficiency stepping motor control. It consist of 1.5A peak current drive capable output full bridge

1SS422

Contextual Info: 1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Unit: mm Low forward voltage VF = 0.23 V typ. @IF = 5 mA • Small package suitable for mounting on a small space Absolute Maximum Ratings (Ta = 25°C) Characteristics

E67349

Abstract: TLP200D
Contextual Info: TO SH IBA TLP200D TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP200D PBX Unit in mm MODEM •FAX CARD MEASUREMENT INSTRUMENT The TOSHIBA TLP200D consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 pin SOP. The TLP200D is a 2-Form-A switch which is suitable for

Contextual Info: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage CATHODE MARK • Unit: mm : VF 3 = 0.23V (typ.)@ IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM