TOSHIBA 2SC3074 Search Results

2SA1244

Abstract: 2SC3074
Contextual Info: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : VCE (sat) = °-4V (Max.) (at Ie = 3A) High Speed Switching Time : ts^g^l.O/^s (Typ.) Complementary to 2SA1244

2SC3074

Contextual Info: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SCB074 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage VCE = 0-4V (Max.) (at IC = 3A) High Speed Switching Time : tstg = 1 .0/ j s (Typ.) Complementary to 2SA1244

2SA1244

Abstract: 2SC3074
Contextual Info: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE (sat) - °-4 v (Max.) (at l£ = 3 A) • High Speed Switching Time : tstg = 1.0 /us (Typ.)

toshiba 3074

Abstract: 2SC3074 2SA1244
Contextual Info: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE (sat) - °-4 v (Max.) (at l£ = 3 A) • High Speed Switching Time : tstg = 1.0 /us (Typ.)

Contextual Info: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS • Unit in nun Low Collector Saturation Voltage : VCE (sat) = 0-4 V (Max.) (at IC = 3 A) • High Speed Switching Time : tstg = 1.0 jus (Typ.)

2015A

Contextual Info: TOSHIBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage : V cE(sat)=°-4V (Max.) (at Ie=3A ) High Speed Switching Time : tstg=1.0^s (Typ.)

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

2n 3904 411

Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Contextual Info: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13

2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Contextual Info: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.

2SA1244

Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 244 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1244) HIGH CURRENT SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage : v CE(sat)= - ° - 4V (Max.) at Iq = -3 A High Speed Switching Time : tstg = 1.0/^s (Typ.)

Contextual Info: 2SA1244 TOSHIBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • Unit in mm Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at I c = - 3 A High Speed Switching Time : tstg = 1 .0/ j s (Typ.)

Contextual Info: 2SA1244 TOSHIBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • • U nit in mm Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at Iq = - 3 A High Speed Switching Time : tstg = 1.0 jus (Typ.)

2SA1244

Abstract: A1244 2SC3074
Contextual Info: 2SA1244 TOSHIBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at I q = - 3 A • High Speed Switching Time : tstg = 1.0 /us (Typ.)

Contextual Info: TOSHIBA 2SA1244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS H A 1 mm m m m 1 A4 • ■ Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage * v CE(sat) = -0 .4 V (Max.) at I c = - 3 A • High Speed Switching Time :

20A-8

Contextual Info: TOSHIBA 2SC3074 Transistor Silicon NPN Epitaxial Type PCT Process High Current Switching Applications Features • Low Collector Saturation Voltage - VCE (sat, = 0.4 V (Max.) (at lc = 3A) • High Speed Switching Time - tgtg = 1.0ns (Typ.) • Complementary to 2SA1244

2sc3074

Contextual Info: TO SH IBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (saf) = 0.4 V (Max.) (at In = 3 A) High Speed Switching Time : tstg = 1.0 /us (Typ.)

Contextual Info: TOSHIBA TRANSISTOR 2SC3074 SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE(sat)=0.4V(Max.) a (at Ic=3A) . High Speed Switching Time : tstg=l-0^s(Typ.) . Complementary to 2SA1244

2SA1244

Abstract: 2SC3074 toshiba 2sc3074
Contextual Info: TO SH IBA 2SC3074 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3074 HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (saf) = 0.4 V (Max.) (at In = 3 A) High Speed Switching Time : tstg = 1.0 /us (Typ.)

c3074

Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244

c3074

Abstract: 2SA1244 2SC3074
Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ.) • Complementary to 2SA1244

c3074

Abstract: Equivalent 2SC3074 2SA1244 2SC3074
Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ) • Complementary to 2SA1244

Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244

c3074

Abstract: C3074 y 2SA1244 2SC3074
Contextual Info: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ) • Complementary to 2SA1244