TOSHIBA A 200 INVERTER Search Results

Contextual Info: MG200J6ES60 TOSHIBA IGBT Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance

set igbt on off Vge

Abstract: MG200J6ES60 "TOSHIBA IGBT module"
Contextual Info: MG200J6ES60 TOSHIBA IGBT Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance

TC4S69F

Contextual Info: TOSHIBA TC4S69F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4S69F INVERTER GATE The TC4S69F is three stage inverter. The output is provided with the buffer, the input/output voltage characteristic has been improved. Thus an increase in propagation delay time caused by an increase

A961

Contextual Info: TOSHIBA MIG200Q101H TO SH IBA INTELLIGENT GTR MODULE SILICON N CHAN NEL IGBT M I G 2 0 0 Q 1 01 H HIGH POWER SW ITCHING APPLICATIO NS MOTOR CO N TRO L APPLICATIO NS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature in One Package.

Contextual Info: MG200J6ES60 TOSHIBA GTR Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance

Contextual Info: GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 Fourth Generation IGBT Current Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A)

MG200J6ES60

Abstract: TOSHIBA IGBT DATA BOOK
Contextual Info: MG200J6ES60 TOSHIBA GTR Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. · The electrodes are isolated from case. · Low thermal resistance

TC4S11F

Contextual Info: TOSHIBA TC4S11F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4S11F 2 INPUT NAND GATE The TC4S11F is 2-input positive logic NAND gates. Gate output with inverter buffer improve the inputoutput characteristics and even if the load capacitance

c1827

Abstract: MIG200Q2CSB1X TLP559
Contextual Info: MIG200Q2CSB1X TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG200Q2CSB1X 1200V/200A 2in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuits and control circuits (IGBT drive units, protection units for short-circuit

GT50G321

Contextual Info: GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 Fourth Generation IGBT Current Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A)

SG800R24

Abstract: RC snubber dv/dt handbook 135C SG800EX24 SG800U24 SG800W24
Contextual Info: TOSHIBA GATE TU RN -O FF THYRISTOR SG800R24, SG800U24 SG800W24, SG800EX24 SEMICONDUCTOR T O SH IB A TECHNICAL DATA SG800R24 Unit in mm CHOPPER, INVERTER APPLICATION 2 -0 3 .6 ± O .2 • Repetitive Peak Off-State Voltage • • • • : V d r m = 1300, 1600, 1800,

GT50G321

Contextual Info: GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 Fourth Generation IGBT Current Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed: tf = 0.30 s typ. (IC = 60 A)

Contextual Info: TOSHIBA MIG200J201H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT MÎG200J201H HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature in One Package.

GT40G121

Abstract: 40G121 gt40
Contextual Info: GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 Fourth-Generation IGBT Current Resonance Inverter Switching Applications • Unit: mm Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)

40G121

Contextual Info: GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 Fourth-Generation IGBT Current Resonance Inverter Switching Applications • Unit: mm Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)

Contextual Info: MG200J6ES60 TOSHIBA GTR Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance

Contextual Info: TOSHIBA GATE TU RN -O FF THYRISTOR SG800R24, SG800U24 SG800W24, SG800EX24 SEMICONDUCTOR T O SH IB A TECHNICAL DATA SG S00R24 CHOPPER, INVERTER APPLICATION U nit in mm 2 -J2 Í3 .6 ± 0 .2 • Repetitive Peak Off-State Voltage : Vr>T?M- 1300, 1600, 1800,

MIG300J2CSB1W

Abstract: TLP559 IC3001 NS1000A
Contextual Info: MIG300J2CSB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG300J2CSB1W 600V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuits and control circuits (IGBT drive unit, units for protection against short-circuit

MIG400J2CSB1W

Abstract: TLP559
Contextual Info: MIG400J2CSB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG400J2CSB1W 600V/400A 2in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuits and control circuits (IGBT drive unit, units for protection against short-circuit

Contextual Info: GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance Inverter Switching Applications • FRD included between emitter and collector · Enhancement-mode · High speed: tf = 0.30 µs typ. (IC = 60 A)

MIG200J6CMB1W

Abstract: TLP559 mig200j6
Contextual Info: MIG200J6CMB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG200J6CMB1W 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current,

GT40T301

Contextual Info: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)

Contextual Info: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)

40G121

Abstract: GT40G121
Contextual Info: GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 Fourth-Generation IGBT Current Resonance Inverter Switching Applications • Enhancement mode type • High speed: tf = 0.30 s typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)