TOSHIBA DIODE 1A Search Results

5dl2c

Contextual Info: TOSHIBA 5DL2C48A,5FL2C48A,U5DL2C48A,U5FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive Peak Reverse Voltage

20GL2C

Contextual Info: TOSHIBA U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage Average Output Rectified Current Ultra Fast Reverse-Recovery Time

10JL2CZ47

Contextual Info: TOSHIBA 10JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage Average Output Rectified Current

5dl2c a

Abstract: 5DL2C41A 5dl2c
Contextual Info: TOSHIBA 5DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C41A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 10.3MAX., • Repetitive Peak Reverse Voltage Vr RM = 200V • Average Output Rectified Current

Contextual Info: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the

TLP3123

Contextual Info: TLP3123 TOSHIBA Photocoupler PHOTORELAY TLP3123 Measurement Instruments Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3123 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.

11-5B2

Abstract: E67349 TLP4222G TLP4222G-2
Contextual Info: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the

Contextual Info: TLP3123 TOSHIBA Photocoupler PHOTORELAY TLP3123 Measurement Instruments Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3123 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.

11-5B2

Abstract: TLP4222G TLP4222G-2 photorelay
Contextual Info: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the

1S43

Abstract: 11-5B2 E67349 TLP4222G TLP4222G-2
Contextual Info: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the

Contextual Info: TLP3123 TOSHIBA Photocoupler PHOTORELAY TLP3123 Measurement Instruments Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3123 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.

TLP3123

Contextual Info: TLP3123 TOSHIBA Photocoupler PHOTORELAY TLP3123 Measurement Instruments Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3123 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.

1N4607

Abstract: SC-40 TOSHIBA 1N4607
Contextual Info: TOSHIBA {DISCRET E/ OPT O} b? 9097250 TOSHIBA DISCRETE/OPTO 1N4607 - DDDTSTS □ "J , D rr.o'lS-*? 67C 09295 Silicon Epitaxial.-Planar Type Diode TENTATIVE Unit in nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.

11-5B2

Abstract: E67349 TLP4222G TLP4222G-2
Contextual Info: TLP4222G,TLP4222G-2 TOSHIBA Photocoupler Photorelay TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4222G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the

Contextual Info: TOSHIBA 10FWJ2CZ47M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 1 QFWJ2CZ47M LO W FORW ARD VOLTAGE SCHOTTKY BARRIER DIODE Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION 10.3MAX., 03.2d 0.2 CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage

Contextual Info: TOSHIBA TENTATIVE TA8323F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA 8 323 F LOW SATURATION VOLTAGE DRIVER FOR MOTOR TA8323F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and free­ wheeling diode.

ST1000EX21

Abstract: transistor JF 1000A diode 5V IGBT 1000A
Contextual Info: TOSHIBA ST1000EX21 TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR ST1000EX21 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • All Electric contacts by Pressure Structure and Airtight Package Anti-Parallel Fast Recovery Diode in This Package

Contextual Info: TOSHIBA TD62M4700F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4700F EXCELLENT LOW SATURATION H-BRIDGE DRIVER TD62M470QF is low voltage use Multi Chip H-Bridge Driver 1C incorporates 4 low saturation discrete Transistors which equipped bias resistor and diode. This 1C is

diode c48

Abstract: 10DL2C 10DL2C48A 10FL2C48A U10DL2C48A U10FL2C48A 10FL2
Contextual Info: TOSHIBA 10DL2C48A, 10FL2C48A#U 10DL2C48A#U 10FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C48A, 10FL2C48A, U10DL2C48A, U10FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. • • • • Repetitive Peak Reverse Voltage : V rrm = 200, 300V

Contextual Info: 2SD1160 TOSHIBA 2 S D 1 160 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS • • • High DC Current Gain Low Saturation Voltage : 0.6 V MAX. @ Built-in Free Wheel Diode

toshiba diode 2A

Contextual Info: 2SD1160 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD116Q SWITCHING APPLICATIONS. Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS. • High DC Current Gain • Low Saturation Voltage : 0.6V MAX. @ • Built-in Free Wheel Diode MAXIMUM RATINGS (Ta = 25°C)

TLP3122

Contextual Info: TLP3122 TOSHIBA Photocoupler PHOTORELAY TLP3122 Measurement Instruments Logic Testers / Memory Testers Board Testers / Scanners Power Line Control FA Factory Automation Unit: mm The TOSHIBA TLP3122 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic SOP package.

Contextual Info: TLP4007G TOSHIBA Photocoupler Photorelay TLP4007G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4007G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage.

TLP4027G

Contextual Info: TLP4027G TOSHIBA Photocoupler Photorelay TLP4027G Telecommunication Measurement Equipment Security Equipment FA Unit: mm The Toshiba TLP4027G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage.