TOSHIBA GERMANIUM Search Results

TOSHIBA GERMANIUM Result Highlights (5)

Part	Manufacturer	Description
TCR3DG28	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 300 mA, WCSP4E
TCKE812NA	Toshiba Electronic Devices & Storage Corporation	eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B
TK2R4A08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
CUZ30V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 30 V, USC

TOSHIBA GERMANIUM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SDHC physical layer Abstract: SONY GERMANIUM TRANSISTOR FAT32 8gb toshiba memory silicon power sdhc class 10 Silicon SDHC silicon power 8GB Contextual Info: EYE 12 December 2006 TOSHIBA SEMICONDUCTOR BULLETIN EYE VOLUME 173 CONTENTS New Products Toshiba Introduces World's Highest Class of SDHC Card to the World Market .2 INFORMATION Toshiba, Sony and NEC Electronics Unveil Mass	Original		PDF
MT4S100U Contextual Info: MT4S100U TOSHIBA Tentative TOSHIBA TRANSISTOR SILICON GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S100U Unit in mm +0.1 0.6-0.05 2.1±0.1 V Collector-Emitter Voltage VCEO 3 V Emitter-Base Voltage VEBO TBD V Collector-Current IC 15 mA Base Current IB 7 mA Collector Power Dissipation	Original	MT4S100U 25deg. MT4S100U	PDF
MT6L73FS Contextual Info: MT6L73FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L73FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S109FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10	Original	MT6L73FS MT3S07FS MT3S109FS MT6L73FS	PDF
Contextual Info: MT6L74FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L74FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S110FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10	Original	MT6L74FS MT3S07FS MT3S110FS	PDF
MT6L76FS Contextual Info: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10	Original	MT6L76FS MT3S06FS MT3S106FS MT6L76FS	PDF
Contextual Info: MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S36FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 8	Original	MT6L67FS MT3S36FS MT3S106FS	PDF
Contextual Info: MT6L75FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L75FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10	Original	MT6L75FS MT3S07FS MT3S106FS	PDF
Contextual Info: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 13	Original	MT6L77FS MT3S11FS MT3S106FS	PDF
Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF = 1.15dB typ. (@ f=1GHz) • High Gain:\|S21e\| = 10.5dB (typ.) (@ f=1GHz)	Original	MT3S113P SC-62	PDF
Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB typ. (@ f=1GHz) • High Gain:\|S21e\| =11.8dB (typ.) (@ f=1GHz) 2	Original	MT3S113 O-236 SC-59	PDF
TA4020FT Abstract: 60GHz transistor 60Ghz TESQ Contextual Info: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT ○ UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 High Gain: • Lead free article \|S21e\| =15.0dB (@ f=1.5GHz)	Original	TA4020FT TA4020FT 60GHz transistor 60Ghz TESQ	PDF
60Ghz Abstract: TA4020FT Contextual Info: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT ○ UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 High Gain: • Lead free article \|S21e\| =15.0dB (@ f=1.5GHz)	Original	TA4020FT 60Ghz TA4020FT	PDF
60Ghz Abstract: 60GHz transistor MT4S100T Contextual Info: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P6 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics	Original	MT4S100T 60Ghz 60GHz transistor MT4S100T	PDF
Contextual Info: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P7 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics	Original	MT4S101T	PDF

60Ghz Abstract: TA4020FT rf transistor frequency 1.5GHz gain 20 dB Contextual Info: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT Unit: mm ○ UHF LOW NOISE AMPLIFIER APPLICATION 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 NF=0.95dB (@ f=1.5GHz) 2 • High Gain: • Lead free article	Original	TA4020FT 60Ghz TA4020FT rf transistor frequency 1.5GHz gain 20 dB	PDF
Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:\|S21e\|2=10.5dB(Typ.) (@ f=1GHz) Marking	Original	MT3S113P SC-62	PDF
Contextual Info: MT4S101T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S101T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 Features 3 P7 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage	Original	MT4S101T	PDF
Contextual Info: MT4S104T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES P1 1 Absolute Maximum Ratings Ta = 25°C TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage	Original	MT4S104T	PDF
TB62752AFUG Abstract: TA4401CT TB7001FL TOSHIBA RF Power Module Contextual Info: TOSHIBA SEMICONDUCTOR BULLETIN EYE December 2005 VOLUME 161 CONTENTS New Products White LED Driver IC .2 SiGe Power Amplifier for 1.9GHz to 2.5GHz Wireless Applications.3	Original	TB62752AFUG TB62752AFUG TA4401CT TB7001FL TOSHIBA RF Power Module	PDF
MT3S113 Abstract: transistor 2F to-236 4360A Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:\|S21e\|2=11.8dB(Typ.) (@ f=1GHz) Marking	Original	MT3S113 O-236 SC-59 MT3S113 transistor 2F to-236 4360A	PDF
Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:\|S21e\|2=11.8dB(Typ.) (@ f=1GHz) Marking	Original	MT3S113 O-236 SC-59	PDF
mt3s113p Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:\|S21e\|2=10.5dB(Typ.) (@ f=1GHz) Marking	Original	MT3S113P SC-62 mt3s113p	PDF
Contextual Info: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT Unit: mm ○ UHF LOW NOISE AMPLIFIER APPLICATION 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 NF=0.95dB (@ f=1.5GHz) 2 • High Gain: • Lead free article	Original	TA4020FT	PDF
Contextual Info: MT4S300T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S300T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P3 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Absolute Maximum Ratings Ta = 25°C	Original	MT4S300T	PDF

TOSHIBA GERMANIUM Search Results

TOSHIBA GERMANIUM Result Highlights (5)

TOSHIBA GERMANIUM Datasheets Context Search

SDHC physical layer

MT4S100U

MT6L73FS

MT6L76FS

TA4020FT

60Ghz

60Ghz

60Ghz

TB62752AFUG

MT3S113

mt3s113p