TOSHIBA GTO Search Results

Contextual Info: TOSHIBA TENTATIVE TD62382AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62382AFN 8 LO W INPUT A C TIV E DARLIN GTON SINK DRIVER The TD62382AFN is non-inverting transistor array which is comprised of eight Low saturation output stages and PNP

TD62001AP CIRCUIT

Abstract: TD62004AP TD62001 TD62001AF TD62001AP TD62001F TD62001P TD62002AF TD62002AP TD62002F
Contextual Info: TOSHIBA TD62001-004P/AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62001P, TD62001AP, TD62001F, TD62001AF, TD62002P, TD62002AP, TD62002F TD62002AF, TD62003P, TD62003AP, TD62003F, TD62003AF, TD62004P, TD62004AP TD62004F, TD62004AF

toshiba gto

Contextual Info: TOSHIBA TD62308APA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62308APA 4CH LOW INPUT ACTIVE HIGH-CURRENT DARLINGTON SINK DRIVER The TD62308APA is non-inverting transistor array w hich is comprised o f fo u r NPN d a rlin gto n o u tp u t stages and PNP

Contextual Info: TOSHIBA SGR3500GXH29 TOSHIBA GATE TURN-OFF THYRISTOR LOWER LOSS, REVERSE CONDUCTING TYPE TENTATIVE SGR3500GXH29 INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current R.M.S Reverse Current Peak Turn-Off Current

Contextual Info: t¡ T O S H I B A -CDISCRETE/OPTO> 9097250 TOSHIBA CDIS C R E T E /OPTO SEMICONDUCTOR dFI^gtosd 99D 16743 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 9 4 TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-M0S I ) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA RN1314-RN1318 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1314, RN1315f RN1316, RN1317, RN1318 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design

5393

Abstract: CG 09G TA75393 TA75393F TA75393P TA75393P equivalent dip-8p
Contextual Info: TOSHIBA TA7 5393 P/PA/S/F/F B TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75393P, TA75393PA, TA75393S, TA75393F, TA75393FB DUAL COMPARATOR This device consist of two independent voltage comparators that designed to operate from a single

SGRB000GXH26

Abstract: 4500V 900A GTO thyristor 4500V 4000A
Contextual Info: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA GATE TURN-OFF THYRISTOR SGRB000GXH26 REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C)

rs 1023

Contextual Info: TOSHIBA TENTATIVE 2100GXHH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 21 0 0 G X H H 2 2 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm —4500V Average Forward Current : Ijr AV “ 2100A Double Side Cooling

toshiba gto

Contextual Info: TOSHIBA TENTATIVE 1200GXHH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H23 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS

toshiba gto

Contextual Info: TOSHIBA TENTATIVE 1200GXHH25 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H25 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm —4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling

Contextual Info: TOSHIBA TENTATIVE 1200GXHH24 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H24 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS

Contextual Info: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR 3 <; SILICON P CHANNEL MOS TYPE tt-MOSV I ¿ L Î 1 7 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •

Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent

toshiba gto

Abstract: SGR3000GXH28 GTO thyristor 4500V 4000A GTO 100A 500V 4500V 900A 100a 1000v GTO GTO 10A 500V
Contextual Info: TOSHIBA SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 Unit in mm INVERTER APPLICATION • • • • • • • Repetitive Peak Off-State Voltage VDRM —4500V Note 1 R.M.S On-State Current lT ( R M S ) = 1200A(Tf=77°C)

SG3000GXH29

Abstract: SG3000GXH 13-108D1A
Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent

4500v

Abstract: SG3000GXH23G SG3000GXH29
Contextual Info: TOSHIBA TENTATIVE SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage VdRM = 4500V R.M.S On-State Current IT RMS = 1200A Peak Turn-Off Current ItGQM —3000A Critical Rate of Rise of On-State Current : di/dt = 400A/ jus

toshiba gto

Abstract: GTO 100A 500V gto 100A GTO thyristor SGR3000GXH26 300a 1500v thyristor 300a 1000v thyristor 100a 1000v GTO GTO thyristor 4500V 4000A
Contextual Info: TOSHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM —4500V Note 1 R.M.S On-State Current It (RMS)= 1200A (Tf = 77°C) R.M.S Reverse Current I r (RMS) —900A (Tf = 77°C)

SG3000GXH29

Abstract: LT10
Contextual Info: TOSHIBA SG3000GXH29 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH29 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d RM —4500V R.M.S On-State Current : It RMS = 1200A Peak Turn-Off Current : It GQM —3000A Critical Rate of Rise of On-State Current : di/dt= 400A / jus

100WPEP

Abstract: Ferrite core TDK D1S1555
Contextual Info: TOSHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ? R 7 Q 2-30MHZ SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • Specified 12,5V, 28MHz Characteristics • O utput Power r i c 'r , • • U nit in mm : Po = 100Wp e p

Contextual Info: TOSHIBA SG4000GXH29 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG4000GXH29 Unit in mm Repetitive Peak Off-State Voltage V d RM = 4500V R.M.S On-State Current *T RMS = 1900A Peak Turn-Off Current IT G Q M = 4000A Critical Rate of Rise of On-State Current : d i/d t = 500A/ jus

Contextual Info: TOSHIBA SG3000GXH23 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG3000GXH23 Unit in mm Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A i T G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us

SG3000GXH29

Contextual Info: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us

str 6307

Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
Contextual Info: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering