TOSHIBA HEMT Search Results

induction cooker fault finding diagrams

Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200
Contextual Info: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when

7400A

Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions

mcz 300 1bd

Abstract: SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode
Contextual Info: 개정 신판 도해 반도체 가이드 개정신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 발간에 즈음하여 Color and Visual Guide: Semiconductors Published by TOSHIBA CORPORATION

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level

7-AA03A

Contextual Info: MICROWAVE POWER GaN HEMT TGI9098-100P FEATURES ･INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 50.0dBm at Pin= 42dBm ･HIGH GAIN GL= 12.0dB at 9.0GHz to 9.8GHz ･HERMETICALLY SEALED PACKAGE ･PULSE OPERATION Pulse width=100 s, Duty cycle=10% RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaN HEMT TGI0910-50 FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 41.0dBm ･HIGH GAIN GL= 9.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Ta= 25C

TGI8596-50

Contextual Info: MICROWAVE POWER GaN HEMT TGI8596-50 FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 41.0dBm ･HIGH GAIN GL= 9.0dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Ta= 25C

Contextual Info: MICROWAVE POWER GaN HEMT TGI5867-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = -40dBc at Po=32.0dBm Single Carrier Level

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 12.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 40dBc at Po=29.0dBm Single Carrier Level

Contextual Info: MICROWAVE POWER GaN HEMT TGI5964-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 43.0dBm ･HIGH GAIN GL= 13.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level

Contextual Info: MICROWAVE POWER GaN HEMT TGI1314-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 8.0dB at 13.75GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=37.0dBm Single Carrier Level

Contextual Info: MICROWAVE POWER GaN HEMT TGI1414-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 42.0dBm ･HIGH GAIN GL= 8.0dB at 14.0GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=40.0dBm Single Carrier Level

Contextual Info: MICROWAVE POWER GaN HEMT TGI5867-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = -40dBc at Po=29.0dBm Single Carrier Level

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 12.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 40dBc at Po=29.0dBm Single Carrier Level

TGI8596-50

Abstract: TOSHIBA HEMT 41dBm
Contextual Info: MICROWAVE POWER GaN HEMT TGI8596-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES „ HIGH POWER Pout=47.0dBm at Pin=41.0dBm „ HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TGI8596-50

Abstract: TGI8596
Contextual Info: MICROWAVE POWER GaN HEMT TGI8596-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=41.0dBm „ HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TGI0910-50

Contextual Info: MICROWAVE POWER GaN HEMT TGI0910-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=41.0dBm „ HIGH GAIN GL=9.0dB at 9.5GHz to 10.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

tgi8596-50

Abstract: TGI8596
Contextual Info: MICROWAVE POWER GaN HEMT TGI8596-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=41.0dBm „ HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TGI7785-25L

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-25L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=44.5dBm at Pin=35.0dBm „ HIGH GAIN GL=12.0dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

TGI1414-50L

Contextual Info: MICROWAVE POWER GaN HEMT TGI1414-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES „ HIGH POWER Pout=47.0dBm at Pin=42.0dBm „ HIGH GAIN GL=8.0dB at 14.0GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

TGI7785-50L

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=40.0dBm „ HIGH GAIN GL=11.0dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

TGI1414-50L

Abstract: TOSHIBA HEMT 1.5
Contextual Info: MICROWAVE POWER GaN HEMT TGI1414-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES „ HIGH POWER Pout=47.0dBm at Pin=42.0dBm „ HIGH GAIN GL=8.0dB at 14.0GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

TOSHIBA HEMT

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-120L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=51.0dBm at Pin=44.0dBm „ HIGH GAIN GL=11.0dB at Pin=20.0dBm „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION