TOSHIBA K2916 Search Results

TOSHIBA K2916 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TB6585AFTG		Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/3 PhasesDriver/Vout(V)=45/Iout(A)=1.8/Square, Sine Wave
TB6633FNG		Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=1/Square Wave
TB67Z800FTG		Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square, Sine Wave
TC78B006FNG		Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/1 Phase Pre Driver/Vout(V)=40/Square, Sine Wave
TC78B041FNG		Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/3 Phases Controller/Vout(V)=18/Square, Sine Wave

TOSHIBA K2916 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K2916 Contextual Info: TOSHIBA 2SK2916 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2916 IGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.8±0.5 • • •	OCR Scan	2SK2916 K2916	PDF
K2916 Abstract: 2SK2916 Contextual Info: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916 K2916 2SK2916	PDF
K2916 Abstract: TOSHIBA K2916 2SK2916 Contextual Info: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916 K2916 TOSHIBA K2916 2SK2916	PDF
K2916 Contextual Info: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916 K2916	PDF
2SK2916 Abstract: K2916 Contextual Info: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916 2SK2916 K2916	PDF
Contextual Info: TOSHIBA 2SK2916 T O SH IB A FIELD EFFECT TR A N SISTO R SILICO N N C H A N N E L M OS T Y P E tt-M O S V 2SK2916 IGH SPEED, HIGH V O LT A G E SW ITCH IN G A PP LIC A TIO N S D C-D C CO N V ER TER , R E LA Y DRIVE A N D M O TO R DRIVE A PP LIC A TIO N S	OCR Scan	2SK2916	PDF
K2916 Abstract: TOSHIBA K2916 2SK2916 Contextual Info: 2SK2916 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅤ 2SK2916 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用単位: mm : RDS (ON) = 0.35Ω (標準) z オン抵抗が低い。	Original	2SK2916 10VID 2-16F1B K2916 2002/95/EC) K2916 TOSHIBA K2916 2SK2916	PDF