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    TOSHIBA K7A50D Search Results

    TOSHIBA K7A50D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR3DG28
    Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TK2R4A08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQH
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ30V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA K7A50D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TK7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK7A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original
    TK7A50D 12led PDF

    K7A50D

    Abstract: toshiba K7A50D TK7A50D K7A50 K*A50D
    Contextual Info: TK7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK7A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original
    TK7A50D K7A50D toshiba K7A50D TK7A50D K7A50 K*A50D PDF

    K7A50

    Abstract: K*A50D
    Contextual Info: TK7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK7A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original
    TK7A50D 12mitation, K7A50 K*A50D PDF

    K7A50D

    Abstract: toshiba K7A50D TK7A50D K7A50 K*A50D
    Contextual Info: TK7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK7A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original
    TK7A50D K7A50D toshiba K7A50D TK7A50D K7A50 K*A50D PDF