TOSHIBA MARKING R2 Search Results
TOSHIBA MARKING R2 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TCR3DG28 |
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LDO Regulator, Fixed Output, 2.8 V, 300 mA, WCSP4E |
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| TCKE812NA |
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eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B |
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| TK2R4A08QM |
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MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS |
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| TPH9R00CQH |
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) |
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| CUZ30V |
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Zener Diode, 30 V, USC |
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TOSHIBA MARKING R2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: RN1107FV~RN1109FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107FV, RN1108FV, RN1109FV Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22 ± 0.05 1.2 ± 0.05 Complementary to RN2107FV~RN2109FV R2 (kΩ) |
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RN1107FV RN1109FV RN1107FV, RN1108FV, RN1109FV RN2107FV RN2109FV RN1108FV | |
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Contextual Info: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 R2 2 5 3 4 +0.02 |
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RN2907FS RN2909FS RN2908FS RN2907FS RN2908FS RN1907FS RN1909FS | |
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Contextual Info: TOSHIBA RN4604 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N A fi n A Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8-0.3 1. 6 Ql go R1 Wr R2 ?C |
OCR Scan |
RN4604 47kfi | |
"MARKING TE" US6Contextual Info: TO SHIBA RN1901 ~RN1906 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1901, RN1902, RN1903, RN1904, RN1905, RN1906 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2 .1± 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25 ±0.1. TYPE No. RI (kfì) R2 (kO) |
OCR Scan |
RN1901 RN1906 RN1901, RN1902, RN1903, RN1904, RN1905, RN2901 RN2906 "MARKING TE" US6 | |
RN4981FS
Abstract: 14 pin ic
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RN4981FS RN4981FS 14 pin ic | |
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Contextual Info: RN4989FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4989FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 fS6 R1 R2 B R2 B E 2 5 3 4 0.1±0.05 |
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RN4989FS | |
RN4983AFSContextual Info: RN4983AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4983AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 C fS6 R1 R2 B R2 B E 2 5 |
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RN4983AFS RN4983AFS | |
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Contextual Info: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Q2 C R1 R1 R2 B 3 4 |
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RN4987FS | |
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Contextual Info: RN4984FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4984FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 fS6 R1 R2 B R2 B E 2 5 3 4 0.1±0.05 |
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RN4984FS | |
RN4988FSContextual Info: RN4988FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4988FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Q2 C C R1 fS6 R1 R2 |
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RN4988FS RN4988FS | |
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Contextual Info: RN4981FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4981FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Q2 C C R1 fS6 R1 R2 B R2 B E 2 5 3 4 0.1±0.05 |
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RN4981FS | |
RN2107FS
Abstract: RN1107FS RN1108FS RN1109FS RN2109FS
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RN1107FS RN1109FS RN1108FS RN1107FS RN1108FS RN1107FS~ RN2107FS RN1109FS RN2109FS | |
RN4986FSContextual Info: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 fS6 R1 R2 B R2 B E 6 2 5 3 4 |
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RN4986FS RN4986FS | |
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Contextual Info: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Q2 C C R1 fS6 R1 R2 |
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RN4986FS | |
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RN4983FSContextual Info: RN4983FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4983FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 C R1 fS6 R2 B R2 B E 6 2 5 3 4 |
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RN4983FS RN4983FS | |
RN4989FSContextual Info: RN4989FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4989FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q1 Q2 C C R1 fS6 R1 R2 B R2 B E 2 5 3 4 |
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RN4989FS RN4989FS | |
RN4982FS
Abstract: voltage w1 6pin
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RN4982FS RN4982FS voltage w1 6pin | |
RN4984FSContextual Info: RN4984FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4984FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 fS6 R1 R2 B R2 B E 2 5 3 4 0.1±0.05 |
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RN4984FS RN4984FS | |
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Contextual Info: RN4983FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4983FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q1 Q2 C R1 C R1 fS6 R2 B R2 B E 6 2 5 3 |
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RN4983FS | |
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Contextual Info: RN4983AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4983AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 C R1 fS6 R2 B R2 B E E R1: 22 kΩ |
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RN4983AFS 22esented | |
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Contextual Info: RN1107FS~RN1109FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FS,RN1108FS,RN1109FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications R2 B R1 Type No. R1 (kΩ) R2 (kΩ) RN1107FS |
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RN1107FS RN1109FS RN1108FS RN2107FS RN2109FS RN1109FS | |
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Contextual Info: RN1107FS~RN1109FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FS,RN1108FS,RN1109FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications R2 B R1 Type No. R1 (kΩ) R2 (kΩ) RN1107FS |
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RN1107FS RN1109FS RN1108FS RN2107FS RN2109FS RN1109FS | |
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Contextual Info: RN1101MFV~RN1106MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1101MFV, RN1102MFV, RN1103MFV RN1104MFV, RN1105MFV, RN1106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm R2 (kΩ) RN1101MFV 4.7 |
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RN1101MFVâ RN1106MFV RN1101MFV, RN1102MFV, RN1103MFV RN1104MFV, RN1105MFV, RN1101MFV RN1102MFV | |
RN4983AFSContextual Info: RN4983AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4983AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 C R1 fS6 R2 B R2 B E E R1: 22 kΩ |
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RN4983AFS RN4983AFS | |