TOSHIBA MG200Q2YS40 Search Results

Toshiba MG200Q2YS40

Contextual Info: TOSHIBA MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mf i ?nnn?Y<; z Ln Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • 4 -F ast-o n Tab #110 High Input Impedance High Speed : tf=0.5/^s Max. (Max.) Low Saturation Voltage

Toshiba MG200Q2YS40

Abstract: LT-15V MG200Q2YS40 YS40 OHS03 JE transistor
Contextual Info: TOSHIBA MG200Q2YS40 M G 2 0 0 Q 2 YS4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4 -F ast-on Tab #110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)

Toshiba MG200Q2YS40

Abstract: MG200Q2YS40
Contextual Info: MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.)

MG200Q2YS40

Abstract: Toshiba MG200Q2YS40
Contextual Info: MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max)

Toshiba MG200Q2YS40

Abstract: MG200Q2YS40
Contextual Info: MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode

Contextual Info: T O SH IB A MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf = 0.5,ms Max. trr = 0.5^s (Max.) Low Saturation Voltage

Z1506

Abstract: Toshiba MG200Q2YS40
Contextual Info: T O SH IB A MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf = 0.5,ms Max. trr = 0.5^s (Max.) Low Saturation Voltage

MG75J2YS40

Abstract: MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 MG100j2YS40 20L6P44 MG150J2YS45 MG100J6ES40 10L6P44
Contextual Info: UL Approved Devices Key to devices not listed in Recognized Components Directory, 1993 Edition ‘ Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Secti UL FILE #E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40

MG200J2YS21

Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
Contextual Info: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9

K643

Abstract: mg200q2 Toshiba MG200Q2YS40 GE647
Contextual Info: TO SH IBA MG200Q2YS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGEST MG200Q2YS40 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • 4 - Fast -on Tab #110 High Input Impedance H ig h sp eed tf=0.5/<s Max.

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

IGBT cross reference semikron eupec

Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

TOSHIBA IGBT

Abstract: failure-rate Toshiba MG200Q2YS40 igbt based high frequency inverter
Contextual Info: . 1 IGBT Derating at Elevated Case-Temperature range 5-1 5 khz with some applications operating to beyond 20 khz. At these frequencies switching-losses are significant and must be conside­ red during device selection. To assist in calcula­ ting device derating at normal operating