TOSHIBA MICROWAVE AMPLIFIER Search Results

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER TMD1414-02 MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES • Suitable for Ku-band VSAT ■ High Gain GldB=36dB TYP. ■ Broadband Operation f=13.75-14.5GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25‘C) SYMBOL UNIT

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER JS9768-AS CHIP FORM MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ High O utput Power 50 Q Input / O utput Broadband Matched PldB=25.0dBm @ f=24.5-26.5GHz. High Power Gain GldB=13dB SYMBOL UNIT RATINGS DRAIN SUPPLY VOLTAGE

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain G ldB=13dB at 1.96GHz CHARACTERISTICS SYMBOL

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER JS9766-AS CHIP FORM MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ High O utput Power 50 Q Input / O utput Broadband Matched PldB=25.0dBm ■ @£=21.2-23.6GHz. High Power Gain GldB=14dB ABSOLUTE MAXIMUM RATINGS(Ta=25°C)

k-band amplifier

Abstract: JS8894-AS
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8894-AS TECHNICAL DATA_ _ _ _ _ _ _ _ _ _ FEATURES: • ■ HIGH POWER PldB = 27.0 dBm at f = 23 GHz HIGH GAIN Gl d B = 6 0 dB at f = 2 3 GHz SUITABLE FOR K BAND AMPLIFIER ION IMPLANTATION CHIP FORM

cq 531

Abstract: cq 529 tpm1919 TPM1919-60
Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain GldB=13dB at 1.96GHz CHARACTERISTICS Output Power at ldB

11175

Abstract: S8837A
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8837A TECHNICAL DATA FEATURES: • HIGH POWER PjdB = 31 dBm at f — 8 GHz ■ HIGH GAIN G1dB = 7dB at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain GldB=13dB at 1.96GHz CHARACTERISTICS Output Power at ldB

S8835

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8835 TECHNICAL DATA FEATURES: • HIGH POWER P^B = 24 dBm at f = 8 GHz ■ HIGH GAIN G-jjb = 8 dB at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER JS9770-AS CHIP FORM MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • 50 O Input / O utput Broadband Matched High O utput Power @ f=27.5 - 29.5GHz. PldB =25.0d B m ■ High Power Gain G ldB =13dB ABSOLUTE MAXIMUM RATINGS(Ta=25°C)

S8851

Abstract: S885T
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8851 TECHNICAL DATA FEATURES: • HIGH POWER P^dB“ 24 dBm at f = 15 GHz ■ ■ HIGH GAIN G1dB = 8 dB ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25° C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8837A-AS TECHNICAL DATA FEATURES : • HIGH POWER = 3 2 dBm at f = 8 GHz HIGH GAIN G1dB = 7 dB at f = 8 GHz ■ SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C

S8850A

Abstract: S8850 Microwave Semiconductor s88
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8850A TECHNICAL DATA FEATURES: • HIGH POWER P^cjB = 21.5dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN G1dB = 9 . ° dB at f = 15 GHz ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C

JS8834-AS

Abstract: S2230
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8834-AS TECHNICAL DATA FEATURES: • MEDIUM POWER SUITABLE FOR C-BAND AMPLIFIER p1dB = 21 dBm at f = 8 GHz ION IMPLANTATION ■ HIGH GAIN G1dB = 9 dB at f = 8 GHz CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C

S8853

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8853 TECHNICAL DATA FEATURES: • ■ HIGH POWER P-jdB = 2 8 dBm at f = 15 GHz HIGH GAIN G1dB = 7 dB at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C

GK 087

Abstract: A1203 SN 46 LS 46 JS8855-AS
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8855-AS TECHNICAL DATA FEATURES: • HIGH POWER p1dB~ 31.5 dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN G1dB = 7dB at f = 15 GH z ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8837A-AS TECHNICAL DATA FEATURES : • HIGH POWER = 3 2 dBm at f = 8 GHz HIGH GAIN G1dB = 7 dB at f = 8 GHz ■ SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C

S8855

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8855 TECHNICAL DATA FEATURES: • ■ HIGH POWER p1 d B ~ 31.5 dBm at f = 15 GHz HIGH GAIN G|dB = 6.5 dB at f = 15 GHz SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8836A-AS TECHNICAL DATA FEATURES: • HIGH POWER PjdB = 29.5 dBm at f = 8 GHz ■ HIGH GAIN G1dß = 7.5 dB at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C

2SC1557

Abstract: L39C cub vc 150
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO tpwjimm/fmm L 39C 0 0 4 8 9 Ü T ^ 3 / '2 3 - -If O O VHP , L’HP^CATVffl ° Microwave High Power Amplifier Applications ° VHP, II HP Band CATV Applications MAXIMUM RATINGS (Ta =25°C) CHARACTERISE C

toshiba 8893

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8893-AS TECHNICAL DATA FEATURES: • ■ ■ ■ ■ HIGH POWER PidB = 24.0 dBm at f = 23 GHz HIGH GAIN GldB = 6 . 0 dB at f = 2 3 GHz SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C

8853a

Contextual Info: TOSHIBA I MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8853-AS TECHNICAL DATA FEATURES: • HIGH POWER PldB = 28.0 dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND . I0 N IMPLANTATION ■ HIGH GAIN G|dB = 7-0 dB at f = 15 GHz ■ CHIP FORM AMPLIFIER RF PERFORMANCE SPECIFICATIONS Ta = 2 5 °C

JS8851-AS

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8851-AS TECHNICAL DATA FEATURES: • ■ HIG H POWER PjdB— 2 4 d B m H IG H GAIN Gu b ^ 8 dB SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION CHIP FORM at f = 15 GHz at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25 C

Toshiba JS8836A-AS

Abstract: JS8836A-AS
Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8836A-AS TECHNICAL DATA FEATURES: • HIGH POWER IdB = 29.5 dBm at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION HIGH GAIN G1dB = 7 5 dB at f = 8 GHz CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° Ci