TOSHIBA PACKAGE LABEL Search Results
TOSHIBA PACKAGE LABEL Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPH9R00CQH |
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) |
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TPH9R00CQ5 |
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) |
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TPH1R306PL |
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N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) |
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TPHR8504PL |
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N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) |
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TPHR7404PU |
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N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOSⅨ-H |
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TOSHIBA PACKAGE LABEL Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TLP173A TOSHIBA Photocoupler Photorelay TLP173A Telecommunications Control Equipment Data Acquisition System Security Equipment Measurement Equipment Unit: mm The Toshiba TLP173A consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a MFSOP6 package. |
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TLP173A TLP173A | |
Contextual Info: TLP173A TOSHIBA Photocoupler Photorelay TLP173A Telecommunications Control Equipment Data Acquisition System Security Equipment Measurement Equipment Unit: mm The Toshiba TLP173A consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a MFSOP6 package. |
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TLP173A TLP173A | |
E67349
Abstract: Photocoupler 60v mfsop6
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TLP173A TLP173A E67349 Photocoupler 60v mfsop6 | |
toshiba tape and reelContextual Info: TOSHIBA 13. Taping o f Flat Package IC’s Our flat package IC ’s in the style o f taping packages are suppliable according to th e follow ing specifications. As for fu rth er details, please inquire at respective sales divisions in charge. Taping Specifications for Flat Packages o f Toshiba BIP IC’s |
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TA7688F toshiba tape and reel | |
toshiba 1997 label
Abstract: 1sv101
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1SV101 --15V 50MHzv toshiba 1997 label 1sv101 | |
C20V
Abstract: 1SV102 C25V
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1SV102 0L55MAX. C20V 1SV102 C25V | |
E67349Contextual Info: TLP2118 TOSHIBA PHOTOCOUPLER GaAℓAs Ired & PHOTO-IC TLP2118 PDP Plasma Display Panel Unit: mm 8 7 6 5 The Toshiba TLP2118 consists of GaAℓAs infrared light emitting diodes and integrated high-gain, high-speed photodetectors. The TLP2118 is housed in the SO8 package. |
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TLP2118 TLP2118 E67349 | |
1SV102
Abstract: C20V C25V
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1SV102 0L55MAX. 1SV102 C20V C25V | |
toshiba tape and reel
Abstract: TA7291F
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TA7291F toshiba tape and reel | |
sv101Contextual Info: TOSHIBA 1SV101 TOSHIBA VARIABLE CAPACITANCE DIODE FM TUNER APPLICATIONS. SILICON EPITAXIAL PLANAR TYPE 1 S V 101 Unit in mm 4.3 MAX. • • • • High Capacitance Ratio Low Series Resistance Small Package. Low Tuning Voltage Range C3V/C9V = 2-0~2.7 rs = 0.30 Typ. |
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1SV101 Rever89-31 sv101 | |
c9v diode
Abstract: 1SV101
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1SV101 55MAX. Rev01-01-16 c9v diode 1SV101 | |
TLP2166A
Abstract: TLP2166
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TLP2166A TLP2166A TLP2166 | |
1SV101
Abstract: c9v diode
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1SV101 0L55MAX. 50MHz 1SV101 c9v diode | |
1SV102Contextual Info: TOSHIBA 1 SV 102 TOSHIBA VARIABLE CAPACITANCE DIODE u v SILICON EPITAXIAL PLANAR TYPE m ? AM RADIO BAND TUNING APPLICATIONS. • High Capacitance Ratio : C2V/,^25V ~23 Typ. • High Q : Q = 400 (Typ.) • Small Package. M A X IM U M RATINGS (Ta = 25 °0 |
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tlp358
Abstract: TLP358F tp5ab toshiba shipping methods
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TLP358/TLP358F TLP358 TLP358F TLP358F tp5ab toshiba shipping methods | |
1SV149Contextual Info: TOSHIBA 1SV 149 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS 4.2MAX. • High Capacitance Ratio : C iy /C g y = 15 Min. • High Q : Q = 200 (Min.) • Small Package • Low Voltage Operation |
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1SV149 1SV149 | |
1SV102Contextual Info: TOSHIBA 1S V 102 TOSHIBA VARIABLE CAPACITANCE DIODE 1S SILICON EPITAXIAL PLANAR TYPE 102 V AM RADIO BAND TUNING APPLICATIONS. U nit in mm 4.3 MAX. • High Capacitance Ratio : C2V ¡ C25V = 23 Typ. • High Q : Q = 400 (Typ.) • Sm all Package. Q S5M AX. |
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1SV149Contextual Info: 1SV 149 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : C iy /C g y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V |
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1SV149 1SV149 | |
tlp2108
Abstract: TLP2105
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TLP2108 TLP2108 TLP2105, TLP2105 | |
TLP2108
Abstract: TLP2105
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TLP2108 TLP2108 TLP2105, TLP2105 | |
TLP2105
Abstract: TLP2108
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TLP2105 TLP2105 TLP2108, TLP2108 | |
TLP2105
Abstract: TLP2108
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TLP2105 TLP2105 TLP2108, TLP2108 | |
TYAD00AC00BUGK
Abstract: SCR Handbook, rca GBNAND P-FBGA224-1218-0 THGV ACMD18 ACMD42 p-fbga224 Toshiba confidential NAND THGVS1G3D1CXGI1
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TYAD00AC00BUGK TYAD00AC00BUGK 824-bit 912-bit 256-bit 224-pin 001e800 001e810 003d400 SCR Handbook, rca GBNAND P-FBGA224-1218-0 THGV ACMD18 ACMD42 p-fbga224 Toshiba confidential NAND THGVS1G3D1CXGI1 | |
toshiba packing label
Abstract: TLN241 750H ST-100S TOSHIBA ADDC pine alpha st-100s arakawa chemical
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TLN241 toshiba packing label TLN241 750H ST-100S TOSHIBA ADDC pine alpha st-100s arakawa chemical |