TOSHIBA RF SEMICONDUCTOR 2014 Search Results

SMD TRANSISTOR H2A NPN

Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
Contextual Info: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

Contextual Info: TA4107F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4107F 1 GHz Band Down Converter Application CATV Analog/Digital Tuner Terrestrial Digital TV Tuner Features • Low distortion at high RF signal input IIP3 : +13dBmW • Performance at low Lo signal input: −5dBmW

Contextual Info: TC75S61TU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S61TU Single Operational Amplifier Low Noise Operational Amplifier TC75S61TU Features • Low Noise Operational Amplifier: VNI = 15 nV/√Hz(typ.) at VDD=3.3 V • Small Phase Delay: -2.5 degree (typ.)

Contextual Info: TC75S51F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S51F, TC75S51FU, TC75S51FE Single Operational Amplifier The TC75S51F/TC75S51FU/TC75S51FE is a CMOS singleoperation amplifier which incorporates a phase compensation circuit. It is designed with a low-voltage and low-current power

Contextual Info: TC75S63TU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S63TU Single Operational Amplifier Low Noise Operational Amplifier TC75S63TU Features • Low Noise. VNI = 7.8nV/√Hz (typ.) @ VDD = 3.3 V • Small Phase Delay. -2.5 degrees @VDD = 3.3 V (typ.), f = 2kHz

Contextual Info: TC75S101F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S101F, TC75S101FU, TC75S101FE Single Operational Amplifier Input and Output Full Range Features • TC75S101F Input and Output Full Range • Low-input offset voltage : VIO = 3.0 mV (max.)

Contextual Info: TC75S54F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S54F, TC75S54FU, TC75S54FE Single Operational Amplifier The TC75S54F/TC75S54FU/TC75S54FE is a CMOS singleoperation amplifier which incorporates a phase compensation circuit. It is designed for use with a low-voltage, low-current

Contextual Info: TC75S60F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S60F, TC75S60FU Single Operational Amplifier TC75S60F, TC75S60FU are CMOS operational amplifier with low supply voltage, low supply current. TC75S60F Features • High slew rate: SR VDD = 3 V = 5.1 V/ s (typ.)

Contextual Info: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5 to 2.2 V Weight: 0.003 g (typ.)

Contextual Info: TA4011AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 3.5 mA • Wide band: f = 2.4 GHz 3dB down • Operating supply voltage: VCC = 1.5 to 3 V Weight: 0.003 g (typ.)

Contextual Info: TC75S55F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S55F, TC75S55FU, TC75S55FE Single Operational Amplifier The TC75S55F/TC75S55FU/TC75S55FE is a CMOS singleoperation amplifier which incorporates a phase compensation circuit. It is designed for use with a low-voltage, low-current

Contextual Info: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA

Contextual Info: TC75W60FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC75W60FU, TC75W60FK Dual Operational Amplifier TC75W60FU Features • High slew rate • Single and dual power Supply operations are possible. : VDD = ±0.9 to 3.5 V or 1.8 to 7 V : SR VDD = 3 V = 5.1 V/ s (typ.)

Contextual Info: JDP3C04TU TOSHIBA Diode Silicon Epitaxial Pin Type JDP3C04TU VHF~UHF Band RF Attenuator Applications Unit: mm 2.1±0.1 Useful for small size package Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current

Contextual Info: 2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.55 pF typ. • Low noise figure: NF = 2dB (typ.) (f = 100 MHz)

Contextual Info: JDP4P02AT TOSHIBA Diode Silicon Epitaxial PIN Type JDP4P02AT UHF~VHF Band RF Switch Applications Unit: mm • Low capacitance: CT = 0.3 pF typ. Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 150

Contextual Info: JDP3C02AU TOSHIBA Diode Silicon Epitaxial PIN Type JDP3C02AU UHF~VHF Band RF Switch Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 3-pin small packages. • Low series resistance: rs = 1.0 Ω typ.

Contextual Info: JDP2S08SC TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S08SC Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ. • Low capacitance: CT = 0.21 pF (typ.)

Contextual Info: 2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications FM, RF, MIX, If Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.55 pF typ. • Low noise figure: NF = 2.3dB (typ.)

Contextual Info: JDP2S02ACT TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02ACT Unit: mm UHF~VHF Band RF Switch Applications • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.

Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA

Contextual Info: 3SK293 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK293 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 16 fF typ. • Low noise figure: NF = 1.5dB (typ.)

Contextual Info: 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 20 fF typ. • Low noise figure: NF = 1.4dB (typ.)