TOSHIBA TRANSISTOR K2601 Search Results

TOSHIBA TRANSISTOR K2601 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8

TOSHIBA TRANSISTOR K2601 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
toshiba transistor k2601 Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON-resistance : RDS (ON) = 0.56 High forward transfer admittance : \|Yfs\| = 7.0 S (typ.) Unit: mm	Original	2SK2601 toshiba transistor k2601	PDF
K2601 Abstract: toshiba K2601 datasheet toshiba K2601 toshiba transistor k2601 2SK2601 SC-65 Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2SK2601 K2601 toshiba K2601 datasheet toshiba K2601 toshiba transistor k2601 2SK2601 SC-65	PDF
K2601 Abstract: toshiba K2601 toshiba K2601 datasheet toshiba transistor k2601 2SK2601 SC-65 Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2SK2601 K2601 toshiba K2601 toshiba K2601 datasheet toshiba transistor k2601 2SK2601 SC-65	PDF
Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2SK2601	PDF
toshiba K2601 Abstract: K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2SK2601 toshiba K2601 K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b	PDF
toshiba K2601 Abstract: K2601 toshiba transistor k2601 Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2SK2601 toshiba K2601 K2601 toshiba transistor k2601	PDF
toshiba K2601 Abstract: toshiba transistor k2601 K2601 2SK2601 SC-65 Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2SK2601 toshiba K2601 toshiba transistor k2601 K2601 2SK2601 SC-65	PDF