TOSHIBA ZENER Search Results

IGBT K 40 T 1202

Contextual Info: TOSHIBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 20 7 Unit in mm TOSHIBA TF1207 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.

Contextual Info: TOSHIBA TF1208 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 ? fl R Unit in mm ÏÏTOT- TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver

fll50

Contextual Info: TOSHIBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 1 fl 7 Unit in mm ÏÏTOT- TOSHIBA TF1207 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.

200H

Abstract: TF1208
Contextual Info: TOSHIBA TF1208 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 8 TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability

IGBT K 40 T 1202

Abstract: 40 t 1202 igbt
Contextual Info: TOSHIBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 ? fl f i TOSHIBA TF1206 is the IGBT gate driver designed for use U nit in mm ÏÏTOT- with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver

40 t 1202 igbt

Abstract: JTS 4PIN 1042a1
Contextual Info: TOSHIBA TF1205 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 1 f l ^ Unit in mm ÏÏTOT- TOSHIBA TF1205 is the IGBT gate driver designed fo r use w ith TOSHIBA Insulated Gate Bipolar Transistor M odule and it includes the optical isolator and IGBT gate driver

tb31224cf

Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
Contextual Info: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future

Contextual Info: TF1208 TOSHIBA TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 20 8 Unit in mm TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability

zener diode T 5z27

Abstract: toshiba zener 5Z27 5Z30 3-10B1A
Contextual Info: TOSHIBA 5Z27,5Z30 TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION 5Z27, 5Z30 POWER SURGE SUPPRESSOR Unit in mm -designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over-voltage conditions. , / .

20M diode zener

Abstract: MARKING LY toshiba U02Z300 U02Z300-X U02Z300-Y U02Z300-Z TOSHIBA DIODE GLASS
Contextual Info: TOSHIBA U02Z300 TOSHIBA DIODE CONSTANT VOLTAGE REGULATION SILICON DIFFUSED JUNCTION TYPE ZENER DIODE U02Z300 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL p* Tj Tstg RATING 200

TA78L008AP

Abstract: TA78L005 TA78L005AP TA78L012AP N22V TA78L006AP TA78L007AP TA78L009AP TA78L010AP TA78L075AP
Contextual Info: TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78L005AP, TA78L006AP, TA78L007AP, TA78L075AP TA78L008AP, TA78L009AP, TA78L010AP, TA78L012AP TA78L132AP, TA78L015AP, TA78L018AP, TA78L020AP, TA78L024AP

Zener IT 243

Abstract: 3Z47 zener toshiba 3z47 diode 3Z12-3Z390 toshiba zener
Contextual Info: 3Z12-3Z390 TOSHIBA TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 371?~373Q fl Unit in mm VOLTAGE DETECTOR AND SUPPRESSOR APPLICATIONS Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package P = 3W

transistor TA78L

Abstract: TA78L TA78L008AP IC TA78L
Contextual Info: TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78L005AP, TA78L006AP, TA78L007AP, TA78L075AP TA78L008AP, TA78L009AP, TA78L010AP, TA78L012AP TA78L132AP, TA78L015AP, TA78L018AP, TA78L020AP, TA78L024AP

3Z27 DIODE

Abstract: 3Z12 3Z27 3Z68 3Z200 3Z47 3Z110 3Z36 rd 3z27 3Z13
Contextual Info: 3Z12-3Z390 TOSHIBA TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 3Z12-3Z390 Unit in mm VOLTAGE DETECTOR AN D SUPPRESSOR APPLICATIONS Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package -o - P = 3W

Contextual Info: TOSHIBA U1ZB6.8-U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8-U1ZB390 Unit in mm CONSTANT VOLTAGE REGULATION. p3 TRANSIENT SUPPRESSORS. • • • + Average Power Dissipation : P = 1.0 W Zener Voltage : Vz = 6.8~390 V Surface Mounting Plastic Mold Package

2SC2982

Abstract: 02CZ24 TA8313 TA8313F
Contextual Info: TOSHIBA TENTATIVE TA8313F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA8313F LED DRIVER FOR CAMERA TA8313F is Multi Chip IC incorporates 4 low saturation discrete transistors and one Zener Diode. This IC is suitable for a camera use LED drive

Contextual Info: TOSHIBA U5ZA27 Z ,U5ZA27C TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE U5ZA27ÍZ), U5ZA27C Unit in mm BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM : ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES ELECTRONIC SYSTEM FOR COMMERCIAL USE ELECTRONIC SYSTEM FOR INDUSTRIAL USE

120V ZENER

Abstract: 1ZC12 1ZC120 1ZC12-1ZC120 1ZC13 1ZC15 1ZC16 1ZC18 1ZC20 1ZC22
Contextual Info: TOSHIBA 1ZC12-1ZC120 TENTATIVE TOSHIBA ZENER DIODE SILICON DIFFUSE TYPE 1ZC12-1ZC120 Unit in mm CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES 6 Average Power Dissipation : P = 1.0 W Zener Voltage : VZ = 12- 120 V Tolerance of Zener Voltage Vg : ±10%

TF1207

Contextual Info: TO SH IBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 7 TOSHIBA TF1207 is the IGBT gate driver designed for use U n it in mm with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.

l24SB

Abstract: ta7555 ta78r TA78M05 TA78M05SB TA78M06SB TA78M08SB TA78M09SB 105SB TA78M12SB
Contextual Info: TOSHIBA TA78M05,06,08~10,12,15,18,20,24SB TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78M05SB, TA78M06SB, TA78M08SB, TA78M09SB, TA78M10SB TA78M12SB, TA78M15SB, TA78M18SB, TA78M20SB, TA78M24SB 0.5A THREE TERMINAL POSITIVE VOLTAGE REGULATORS

ZENER DIODE J3

Abstract: 1SZ57-1SZ59 ZENER C 3V zener diode marking 5d zener diode T3 Marking zener diode mark J3 1SZ57 1SZ57 diode diode j5d zener diode T3
Contextual Info: W7 TOSHIBA {D IS CRET E/ OP TO } ÍmTI^O^SSO □ 9097250 TOSHIBA DISCRETE/OPTO 1SZ57—1SZ59 67C 09381 3 7 D Silicon Planar Type Tem perature Compensated Zener Diode INDUSTRIAL APPLICATIONS Unit in mm VOLTAGE REGULATION AND VOLTAGE STANDARD APPLICATIONS.

DF2S12FU

Contextual Info: TOSHIBA DF2S12FU TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE DF2S12FU DIODES FOR PROTECTING AGAINST ESD • • • Two-pin ultra-small packages are suitable for higher mounting densities. Small Total Capacitance : Cx = 15 pF Typ. Zener Voltage correspond to E24 Series.

Contextual Info: TOSHIBA DF2S12FU TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE DF2S12FU DIODES FOR PROTECTING AGAINST ESD • • • Two-pin ultra-small packages are suitable for higher mounting densities. Small Total Capacitance : Ct = 15 pF Typ. Zener Voltage correspond to E24 Series.

TF1206

Abstract: 200H
Contextual Info: TO SH IBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 6 TOSHIBA TF1206 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability