TOWER MOUNTED Search Results

Contextual Info: TQP3M6005 Mid Band Dual LNA 1700-2000 MHz Applications •  Base Station receivers Tower-mounted amplifiers 16-pin 4x4mm leadless SMT package Product Features       Functional Block Diagram 0.36 dB Noise Figure (single channel) 1700-2000 MHz

hitachi sr 2001

Abstract: DP-14 FP-14DA HA17902 HA17902A HA17902AFP HA17902AP Hitachi DSA0020 Hitachi DSA00201
Contextual Info: HA17902A Series Quad Operational Amplifier ADE-204-068 Z Rev.0 May 2001 Description HA17902A series are quad operational amplifier that provide high gain and internal phase compensation, with single power supply. They can be widely used to control equipments.

HB56UW264DB-5L

Abstract: Hitachi DSA00164 Nippon capacitors
Contextual Info: HB56UW264DB Series 16 MB EDO DRAM S.O.DIMM 2-Mword x 64-bit, 2 k Refresh, 1-Bank Module 8 pcs of 2 M × 8 Components ADE-203-735C (Z) Rev.3.0 Nov. 1997 Description The HB56UW264DB is a 2M × 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 8 pieces of 16-Mbit DRAM (HM51W17805) sealed in TSOP package and 1 pieces

Contextual Info: M54678FP 2-Phase Stepper Motor Driver REJ03F0046-0100Z Rev.1.0 Sep.19.2003 Description The M54678FP is a semiconductor integrated circuit designed for stepper motor driver used to printer, PPC and facsimile. Features • • • • • • Wide supply voltage range 10 – 35V

Contextual Info: Preliminary Data Sheet PA2561T1H R07DS0006EJ0100 Rev.1.00 Jul 08, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2561 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments.

transistor c102

Abstract: HA13565F hitec servo Hitachi DSA00177
Contextual Info: HA13565F Three-Phase Brushless DC Motor Driver IC ADE-207-226A Z 2nd. Edition April 1997 Description HA13565F is a 3-phase brushless DC motor driver IC with digital speed control. It is developed for direct drive of the spindle motor of 5V floppy disk drives. It has the following functions and features.

ZLLS400

Abstract: IR610 ZHCS400 ZLLS400TA ZLLS400TC
Contextual Info: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low

Contextual Info: Preliminary Data Sheet PA2811T1L R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 MOS FIELD EFFECT TRANSISTOR Description The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

Contextual Info: ThaiH EWLETT WÎM PACKARD H P E2444A Preprocessor Interface for the Intel i386DX F or use w ith HP logic an alyzers Preprocessor software configures the logic analyzer labeling address, data and status lines. Additionally, when a state trace is displayed the

FMMT493ATA

Contextual Info: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring

53Z Zetex

Abstract: 1a SOT89 IC35
Contextual Info: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

2A04D

Abstract: ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC dual mosfet marking 506
Contextual Info: ZXMN2A04DN8 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.025 ; ID= 7.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

522BS

Abstract: BSP75GTA
Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

agere preamp

Abstract: P171A016BAA P171A016BAF P171B014BAA P171B014BAF TR-NWT-000468 photo-diode bias
Contextual Info: Advance Data Sheet November 2000 P171-Type PIN/Preamp Features • ■ ■ ■ ■ The P171-Type PIN/Preamp features a rear-illuminated planar diode structure with low capacitance. ■ ■ ■ ■ ■ ■ ■ Low-profile, 4-lead mini-DIL package: — Suitable for SONET applications

sm8a

Abstract: ZXMN3A01F ZXMN3A01FTA ZXMN3A01FTC A93V
Contextual Info: ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.12 ID = 2.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

ZXMC6A09DN8

Abstract: ZXMC6A09DN8TA ZXMC6A09DN8TC
Contextual Info: ZXMC6A09DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure

BSP75NTA

Abstract: D8154
Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ

Contextual Info: PreliminaryData Sheet PD5754T7A R09DS0012EJ0100 Rev.1.00 Dec 22, 2010 SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Gain and Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output

ZXMN2A14FTA

Abstract: diode marking 41a on semiconductor
Contextual Info: ZXMN2A14F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V : RDS(on)=0.06 ; ID= 4.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

TS16949

Abstract: ZXTN2018F ZXTP2027F ZXTP2027FTA
Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to

1.5A 130V power mosfet

Abstract: TS16949 ZXTN25040DFL ZXTN25040DFLTA ZXTP25040DFL
Contextual Info: ZXTN25040DFL 40V, SOT23, NPN low power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 1.5A VCE(sat) < 85mV @ 1A RCE(sat) = 59m⍀ PD = 350mW Complementary part number ZXTP25040DFL Description C Advanced process capability has been used to achieve high current gain

3F31D

Abstract: ZXMN3F31DN8TA TS16949 ZXMN3F31DN8
Contextual Info: ZXMN3F31DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive.

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56AW873E-A Series 8,388,608-word x 72-bit High Density Dynamic RAM Module ADE-203-816A Z Rev. 1.0 Aug. 29, 1996 Description The HB56AW873E-A belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

MLP832

Abstract: ZXTD2M832 ZXTD2M832TA ZXTD2M832TC
Contextual Info: ZXTD2M832 MPPS Miniature Package Power Solutions DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -20V; RSAT = 64m ; IC= -3.5A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual transistors offer