TP250 Search Results

Contextual Info: TP2506 Supertex inc. t p 2si o Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^D S O N b v dos -60V -100 V Order Number / Package (max) Vos<th) (max) (min) TO-243AA* Dice* 3.5£2 -2.4V -1.5A — TP2506ND 3.512

Contextual Info: ^ Supertex inc. TP2502 TP2504 Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / ^D S O N ^G S(th) *D(ON) BV jjgs (max) (max) (min) -20V 2.0C1 -2.4V -40V 2.0£2 -2.4V Order Number / Package TO-243AA* DICE*

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Contextual Info: . Ljà Supertex inc Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BV dgs ^DSfON max) ^GSflh) (max) ' d(ON) (min) TO-243AA* DICE* -60V 3.5£i -2.4V -1.5A — TP2506ND -100V 3.5Q -2.4V -1.5A

Contextual Info: TP2502 LowThreshold Supertex inc. Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package ^GS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet -20V 2.0Q. -2.4V -2.0 A TP2502N8 TP2502ND * Sam e as SO T-89. P roduct supplied on 2000 piece ca rrie r tape reels.

Contextual Info: TP2502N8 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)370m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)550m Minimum Operating Temp (øC)-55

br A 708

Contextual Info: I 1EE D MOTOROLA b3b?2S4 0000240 MO T O R C L A SC S E M IC O N D U C T O R I S r-33-£>7 XSTRS/R F TECHNICAL DATA TP2505 TP2505S A dvance Inform ation The RF Line UHF Power Transistors 5 W — 470 M H z UHF PO W ER T R A N S IS T O R S The TP2505/S are designed for 12.5 V U H F amplifiers. Their construction which incor­

tp5l

Abstract: marking code TP5L TP2502 TP2502N8 TP2502ND
Contextual Info: TP2502 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die† -20V 2.0Ω -2.4V -2.0A TP2502N8 TP2502ND * Same as SOT-89. † Order Number / Package BVDSS / Product supplied on 2000 piece carrier tape reels.

ah2ah

Abstract: 16-Wt
Contextual Info: TP2502 Supertexinc. Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(lh) *D(ON) BV dgs (max) (max) (min) TO-243AA* Diet -20V 2 ,oa -2.4V -2.0A TP2502N8 TP2502ND * Sam e as SOT-89. Product supplied on 2000 piece carrier tape reels.

TP5L

Contextual Info: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

tp5lw

Abstract: TP2502 TP2502ND
Contextual Info: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

TP2504N8

Abstract: A773 A773* Transistor P024 TP2502 TP2502ND TP2504ND 43AA
Contextual Info: S u p e r te x in c TP2502 TP2504 . Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B V oss/ R d S<ON ^ G S ith ) B V dgs max) (m ax) -20V 2.0Q -2.4V -40V 2.0CÌ -2.4V W n) (min) Order Num ber / Package TO-243AA*

p023 diode

Contextual Info: ^ ^ Si i I r ^ zj r* r TP2506 TP2510 Low Thrash o B 1[ i r * , •mimimu . .immilli _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-243AA*

Contextual Info: TP2502 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)800m Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

TP2506

Abstract: TP2510ND TO-243AA TP2510 TP2510N8 P024 TP2506ND
Contextual Info: TP2506/TP2510 TP2506 TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Dice† -60V 3.5Ω -2.4V -1.5A — TP2506ND -100V 3.5Ω -2.4V

Contextual Info: TP2502 hm. tp 2504 I n w T h rftg h n lrB l Prelim inary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON ^GS(th) I d (ON) Order Number / Package BVdgs (max) (max) (min) TO-243AA* DICE+ -20V 2.0Q -2.4V -2.0A — TP2502ND

TP2502

Contextual Info: TP2502 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2502 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

Contextual Info: Supertex inc. TP2502 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown

TP5L

Abstract: MARKING CODE BV sot-89 marking code sot-89 AA
Contextual Info: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

TP2503

Abstract: ARCO 425
Contextual Info: 1EE D I b3fe,7SS4 000023? 5 | MO TOROLA SC MOTOROLA T-ïl-oj XSTRS/R F SEM ICO NDUCTOR fl TECHNICAL DATA TP2503 The RF Line N P N S ilic o n U H F P o w e r T ra n sisto r 5 W - 470 MHz UHF POWER T RAN SIST O R . designed for 12.5 V VH F and UH F amplifiers. High gain at reduced voltage and use of

Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA TP2502 The RF Line UHF Power Transistor 2 W — 470 M H z UHF PO W ER T R A N S IS T O R N P N SILICO N . . . d e s ig n e d f o r U H F l a r g e - s i g n a l a m p l if i e r a p p l i c a t i o n s in in d u s t r ia l a n d c o m m e r c i a l F M

TP2502

Abstract: TP2502N8 TP2502ND
Contextual Info: TP2502 Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die† -20V 2.0Ω -2.4V -2.0A TP2502N8 TP2502ND * Same as SOT-89. † Order Number / Package BVDSS /

Contextual Info: TP25L 0 Supertex me. Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss / R DS ON) V GS(th) W BVdgs (max) (max) (min) TO-243AA* DICEt -20V 2.0£2 -2.4V -2.0A TP2502N8 TP2502ND n) * Same as SOT-89,