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Contextual Info: MOTOROLA Order this document by TP3055V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3055V TMOS V™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TM O S POWER FET 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This

Contextual Info: MOTOROLA Order this document by TP3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3055VL TMOS V™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This

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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3055V TMOS V™ Power Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

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