TPC 8608 Search Results

Contextual Info: P r e l im in a r y P r o d u c t S p e c if ic a t io n O o —I • Z86E86 N 2 8 - P in O n e - T im e P r o g r a m m a b l e M ic r o c o n t r o l l e r w it h N e w , I n t e l l ig e n t A r c h it e c t u r e Totally Logical FEATURES Device OTP KB

MB811

Abstract: TPC 8608
Contextual Info: November 1996 Revision 1.1 DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644 supports 4K refresh. FSA4UN3642

DS05

Contextual Info: ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ March 1996 Edition 2.1 PRODUCT PROFILE SHEET MB8116800A-60/-70 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dynamic RAM The Fujitsu MB8116800A is a fully decoded CMOS Dynamic RAM DRAM that contains

DS05

Abstract: MB8117800A MB8117800A-60 MB8117800A-70 mb8117800
Contextual Info: ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ April 1996 Edition 2.1 PRODUCT PROFILE SHEET MB8117800A-60/-70 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117800A is a fully decoded CMOS Dynamic RAM DRAM that contains

A9 pin contact

Contextual Info: ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ May 1996 Edition 1.0 PRODUCT PROFILE SHEET MB81V18160A-60/-70 CMOS 1M X 16BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16BIT Fast Page Mode Dynamic RAM The Fujitsu MB81V18160A is a fully decoded CMOS Dynamic RAM DRAM that contains

Contextual Info: August 1996 Edition 3.0 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ PRODUCT PROFILE SHEET MB81V17800A-60/70/60L/70L CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dynamic RAM The Fujitsu MB81V17800A is a fully decoded CMOS Dynamic RAM DRAM that contains

MA 20103

Abstract: MB8118160A-60 MB8118160A 024x16-bits A9 pin contact
Contextual Info: ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ May 1996 Edition 1.2 PRODUCT PROFILE SHEET MB8118160A-60/-70 CMOS 1M X 16BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16BIT Fast Page Mode Dynamic RAM The Fujitsu MB8118160A is a fully decoded CMOS Dynamic RAM DRAM that contains

mb8116160a-60

Contextual Info: ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ March 1996 Edition 2.2 PRODUCT PROFILE SHEET MB8116160A-60/-70 CMOS 1M X 16BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16BIT Fast Page Mode Dynamic RAM The Fujitsu MB8116160A is a fully decoded CMOS Dynamic RAM DRAM that contains

MB814100D-60

Abstract: CA10 MB814100D
Contextual Info: February 1996 Edition 3.0 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ Not Recommended for New Design ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ PRODUCT PROFILE SHEET MB814100D-60/-70

814400

Abstract: MB814400D-60 814400d
Contextual Info: February 1996 Edition 3.0 PRODUCT PROFILE SHEET MB814400D-60/-70 CMOS 1M X 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400D is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 4–bit increments. The MB814400D features a

MB811

Contextual Info: October 1996 Revision 1.0 DATA SHEET ESA8UN324 2/4 -(60/70)(J/T)(G/S)-S 32MByte (8M x 32) CMOS EDO DRAM Module General Description The ESA8UN324(2/4)-(60/70()J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA8UN3242 supports

MB811

Abstract: 4Mx8 dram simm
Contextual Info: February1997 Revision 1.1 DATA SHEET ESA8UN324 2/4 -(60/70)(J/T)(G/S)-S 32MByte (8M x 32) CMOS EDO DRAM Module General Description The ESA8UN324(2/4)-(60/70()J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA8UN3242 supports

Contextual Info: November 1996 Revision 1.1 DATA SHEET FSA8UN3642- 60/70 J(G/S)-S 32MByte (8M x 36) CMOS DRAM Module General Description The FSA8UN3642-(60/70)J(G/S)-S is a high performance, 32-megabyte dynamic RAM module organized as 8M words by 36 bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.

N324

Contextual Info: <p October 1996 Revision 1.0 HATA fíH F F T - E S A 8 U N 32 4 2 /4 -(60 /70 )(J /T )(G /S )-S 32MByte (8M x 32) CMOS EDO DRAM Module General Description The ESA8UN324(2/4)-(60/70()J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module

Contextual Info: November 1996 Revision 1.1 DATA SHEET EDC1UV641 1/4 -(60/70)(J/T)G-S 8MByte (1M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC1UV641(1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 1M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.

74ABT16244

Contextual Info: November 1996 Revision 1.0 DATA SHEET EDC4BV724 2/4 -(60/70)(J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC4BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module

2MX16

Contextual Info: October 1996 Revision 1.0 DATA SHEET EDC4UV7282- 60/70 (J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC4UV7282-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.

Contextual Info: October 1996 Revision 1.0 DATA SHEET EDC8UV724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC8UV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module organized as 8M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.

74ABT16244

Abstract: DQ71
Contextual Info: November 1996 Revision 1.0 DATA SHEET EDC4BV7282- 60/70 (J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC4BV7282-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.

20417

Contextual Info: October 1996 Revision 1.0 DATA SHEET EDC4UV724 2/4 -(60/70)JG-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC4UV724(2/4)-(60/70)JG-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.

74LVT16244

Contextual Info: November 1996 Revision 1.0 DATA SHEET EDC8BV724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC8BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module

Contextual Info: November 1996 Revision 1.0 FUJITSU DATA SHEET - EDC8B V724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC8BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module

Contextual Info: cP October 1996 Revision 1.0 FUJI' DATA SHEET - * EDC4U V7282- 60/70 (J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module -3.3 V (ECC) General Description The EDC4UV7282-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module orga­

Contextual Info: cP October 1996 Revision 1.0 FUJI' DATA SHEET - * EDC4U V724 2/4 -(60/70)JG-S 32MByte (4M x 72) CMOS EDO DRAM Module -3.3 V (ECC) General Description The EDC4UV724(2/4)-(60/70)JG-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module or­