TPC81 Search Results
TPC81 Datasheets (128)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPC8102 |
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Metal oxide P-channel FET, Enhancement Type w. diode | Original | 479.82KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8102 |
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P-Channel MOSFET | Original | 270.44KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8102 |
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Power MOSFET Selection Guide with Cross Reference Data | Original | 1.45MB | 45 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8102 |
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Original | 44.05KB | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8102 |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8103 |
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Original | 44.05KB | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8103 |
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Power MOSFET Selection Guide with Cross Reference Data | Original | 1.45MB | 45 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8103 |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8103 |
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Silicon P-channel MOS FET transistor | Scan | 295.91KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8103 |
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FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE | Scan | 305.07KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8104-H |
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Power MOSFET Selection Guide with Cross Reference Data | Original | 1.45MB | 45 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8104-H |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8104-H |
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FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(HIGH SPEED U-MOS II) | Scan | 331.34KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8104-H |
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Scan | 331.34KB | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPC8105-H |
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Power MOSFET Selection Guide with Cross Reference Data | Original | 1.45MB | 45 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8105-H |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8105-H |
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Scan | 300.5KB | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8106-H |
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Power MOSFET Selection Guide with Cross Reference Data | Original | 1.45MB | 45 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8106-H |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8106-H |
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Field Effect Transistor Silicon P Channel MOS Type | Scan | 298.94KB | 5 |
TPC81 Price and Stock
Toshiba America Electronic Components TPC8125,LQ(SMOSFET P-CH 30V 10A 8SOP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPC8125,LQ(S | Digi-Reel | 4,505 | 1 |
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Buy Now | |||||
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TPC8125,LQ(S | Reel | 12 Weeks | 2,500 |
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Buy Now | |||||
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TPC8125,LQ(S | 7,688 |
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Buy Now | |||||||
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TPC8125,LQ(S | 5,000 | 5,000 |
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TPC8125,LQ(S | 5,000 | 14 Weeks | 5,000 |
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TPC8125,LQ(S | 1,988 |
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Buy Now | |||||||
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TPC8125,LQ(S | 1,677 | 1 |
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TPC8125,LQ(S | 15 Weeks | 2,500 |
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Buy Now | ||||||
Toshiba America Electronic Components TPC8129,LQ(SMOSFET P-CH 30V 9A 8SOP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPC8129,LQ(S | Cut Tape | 3,195 | 1 |
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Buy Now | |||||
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TPC8129,LQ(S | Reel | 12 Weeks | 2,500 |
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Buy Now | |||||
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TPC8129,LQ(S | 1,517 |
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TPC8129,LQ(S | 12,410 | 246 |
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TPC8129,LQ(S | Reel | 2,500 |
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Buy Now | ||||||
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TPC8129,LQ(S | Cut Tape | 4,120 | 0 Weeks, 1 Days | 5 |
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Buy Now | ||||
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TPC8129,LQ(S | 15 Weeks | 2,500 |
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Buy Now | ||||||
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TPC8129,LQ(S | 8,276 |
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Get Quote | |||||||
UMW TPC8107MOSFET P-CH 30V 13.5A 8SOIC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPC8107 | Digi-Reel | 2,970 | 1 |
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Buy Now | |||||
Toshiba America Electronic Components TPC8134,LQ(SMOSFET P-CH 40V 5A 8SOP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPC8134,LQ(S | Reel | 2,500 | 2,500 |
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Buy Now | |||||
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TPC8134,LQ(S | Reel | 12 Weeks | 2,500 |
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Buy Now | |||||
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TPC8134,LQ(S |
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Get Quote | ||||||||
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TPC8134,LQ(S | 2,990 | 253 |
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Buy Now | ||||||
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TPC8134,LQ(S | Cut Tape | 2,990 | 0 Weeks, 1 Days | 5 |
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Buy Now | ||||
Toshiba America Electronic Components TPC8132,LQ(SMOSFET P-CH 40V 7A 8SOP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPC8132,LQ(S | Digi-Reel | 1,676 | 1 |
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Buy Now | |||||
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TPC8132,LQ(S | Reel | 12 Weeks | 2,500 |
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Buy Now | |||||
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TPC8132,LQ(S | 7,395 |
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Buy Now | |||||||
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TPC8132,LQ(S | 1,943 | 208 |
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Buy Now | ||||||
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TPC8132,LQ(S | Cut Tape | 2,380 | 5 |
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Buy Now | |||||
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TPC8132,LQ(S | Cut Tape | 136 | 0 Weeks, 1 Days | 5 |
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Buy Now | ||||
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TPC8132,LQ(S | 15 Weeks | 2,500 |
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Buy Now |
TPC81 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.) |
OCR Scan |
TPC8103 | |
TPC8115Contextual Info: TPC8115 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOS IV TPC8115 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型, 薄型で実装面積が小さい。 • |
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TPC8115 TPC8115 | |
TPC8110Contextual Info: TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC8110 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 17 mΩ (typ.) |
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TPC8110 TPC8110 | |
TPC8107 application circuit
Abstract: TPC8107 TPC8107 "pin compatible"
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Original |
TPC8107 TPC8107 application circuit TPC8107 TPC8107 "pin compatible" | |
TPC8121Contextual Info: TPC8121 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅤ TPC8121 ○ ノートブック PC 用 ○ リチウムイオン 2 次電池用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。 • |
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TPC8121 TPC8121 | |
TPC8121Contextual Info: TPC8121 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS V TPC8121 Notebook PC Applications Lithium Ion Battery Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.0 mΩ (typ.) |
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TPC8121 TPC8121 | |
TPC8113Contextual Info: TPC8113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPC8113 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8 mΩ (typ.) |
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TPC8113 TPC8113 | |
tpc8119Contextual Info: TPC8119 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅤ TPC8119 ○ リチウムイオン 2 次電池用 ○ ロードスイッチ用 ○ ノートブック PC 用 • 単位: mm 小型, 薄型で実装面積が小さい。 |
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TPC8119 tpc8119 | |
TPC8119Contextual Info: TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSV TPC8119 Lithium-Ion Battery Applications Load switch Applications Notebook PC Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.) |
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TPC8119 TPC8119 | |
Contextual Info: TOSHIBA TPC8105-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH SPEED U -M O SII TPC8105-H LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8 HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS |
OCR Scan |
TPC8105-H 111III | |
Contextual Info: TO SH IBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 LITHIUM ION BATTERY IN D U S T R IA L A P P L IC A T IO N S PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R ß S (O N ) = 34 m H (Typ.) |
OCR Scan |
TPC8102 | |
Contextual Info: TOSHIBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 LITHIUM ION BATTERY IN D U S T R IA L A P P L IC A T IO N S PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source O N Resistance : R ß S (O N )= 34mO |
OCR Scan |
TPC8102 --30V) --24V, | |
Contextual Info: TO SH IB A TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR t p t f SILICON P CHANNEL MOS TYPE tt-MOSVI t 1 n ? LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance : Rj)g (ON) —34m il (Typ.) • |
OCR Scan |
TPC8102 --10//A --30V) ----24V, | |
TPC8124Contextual Info: TPC8124 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅥ TPC8124 ○ リチウムイオン2次電池用 ○ パワーマネジメントスイッチ用 単位: mm • 小型、薄型で実装面積が小さい。 • オン抵抗が低い。 |
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TPC8124 TPC8124 | |
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tpc8106
Abstract: TPC8106-H
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OCR Scan |
TPC8106-H tpc8106 TPC8106-H | |
tpc8107
Abstract: TPC8107 application circuit
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TPC8107 tpc8107 TPC8107 application circuit | |
TPC8110Contextual Info: TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC8110 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 17 mΩ (typ.) |
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TPC8110 TPC8110 | |
TPC8108Contextual Info: TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8108 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.) |
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TPC8108 TPC8108 | |
mpf200Contextual Info: TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅥ TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) |
Original |
TPC8126 mpf200 | |
TPC8116
Abstract: TPC8116-H
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Original |
TPC8116-H TPC8116 TPC8116-H | |
TPC8125
Abstract: mpf245
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TPC8125 TPC8125 mpf245 | |
TPC8110Contextual Info: TPC8110 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOS III TPC8110 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。 • |
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TPC8110 TPC8110 | |
Contextual Info: TPC8129 MOSFETs Silicon P-Channel MOS U-MOS TPC8129 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.) (VGS = -10 V) |
Original |
TPC8129 | |
Contextual Info: TPC8133 MOSFETs Silicon P-Channel MOS U-MOS TPC8133 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.) (VGS = -10 V) |
Original |
TPC8133 |