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    TPC8102 Price and Stock

    Toshiba America Electronic Components TPC8102(TE12L)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TPC8102(TE12L) 2,275
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    Toshiba America Electronic Components TPC8102

    6 A, 30 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TPC8102 15,000
    • 1 $0.9
    • 10 $0.9
    • 100 $0.9
    • 1000 $0.9
    • 10000 $0.315
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    TPC8102 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPC8102 Toshiba Metal oxide P-channel FET, Enhancement Type w. diode Original PDF
    TPC8102 Toshiba P-Channel MOSFET Original PDF
    TPC8102 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8102 Toshiba Original PDF
    TPC8102 Toshiba Power MOSFETs Cross Reference Guide Original PDF

    TPC8102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSVI TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.)


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    PDF TPC8102

    TPC8102

    Abstract: No abstract text available
    Text: TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSVI TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance


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    PDF TPC8102 TPC8102

    TPC8102

    Abstract: No abstract text available
    Text: TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π •MOSVI TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance


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    PDF TPC8102 TPC8102

    tpc8102

    Abstract: No abstract text available
    Text: TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSVI TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.)


    Original
    PDF TPC8102 tpc8102

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


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    PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27231-5Ea ASSP For Power Management Applications General Purpose DC/DC Converter 2-ch DC/DC Converter IC with Overcurrent Protection MB39A104 • DESCRIPTION The MB39A104 is a 2-channel DC/DC converter IC using pulse width modulation (PWM), incorporating an


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    PDF DS04-27231-5Ea MB39A104 MB39A104

    BJT 2n3904

    Abstract: transistor r5 3pin 2N3904 fg 680 fan 12v 3pin AN-003 2sb772 G760A G768B SI4435DY-T1
    Text: AN-003 Global Mixed-mode Technology Inc. Application Note 12V Fan Speed Controlling and Driving with G760A or G768B Introduction As the development of the technology, many electronic products have strong computing power. Because that the high computing power IC usually need more electricity, the chip will be getting hotter and hotter


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    PDF AN-003 G760A G768B BJT 2n3904 transistor r5 3pin 2N3904 fg 680 fan 12v 3pin AN-003 2sb772 G760A G768B SI4435DY-T1

    MB3879

    Abstract: GRM39B68 RB053L-30 2N7002E C1608JB1H104K C3225JF1E106Z Si4435 TPC8102 4 bit decoder grm39
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27708-2E ASSP for Power Supply Application for secondary battery DC/DC Converter IC for Parallel Charging of 3/4 cell Li-ion & NiMH Batteries MB3879 • DESCRIPTION The MB3879 is a DC/DC converter IC for parallel charging of 3/4 cell Li-ion & NiMH batteries, which uses the


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    PDF DS04-27708-2E MB3879 MB3879 F0209 GRM39B68 RB053L-30 2N7002E C1608JB1H104K C3225JF1E106Z Si4435 TPC8102 4 bit decoder grm39

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27231-1E ASSP For Power Management Applications General Purpose DC/DC Converter 2-ch DC/DC Converter IC with Overcurrent Protection MB39A104 • DESCRIPTION The MB39A104 is a 2-channel DC/DC converter IC using pulse width modulation (PWM), incorporating an


    Original
    PDF DS04-27231-1E MB39A104 MB39A104 F0206

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27247-2E ASSP for Power Supply Applications Secondary battery DC/DC Converter IC of Synchronous Rectification for charging Li-ion battery MB39A119 • DESCRIPTION The MB39A119 is the N-ch MOS drive of the synchronous rectification type DC/DC converter IC using pulsewidth modulation (PWM) type that can charge Li-ion battery from 1 cell to 4 cells and suitable for down-conversion.


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    PDF DS04-27247-2E MB39A119 MB39A119 F0604

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27708-2E ASSP for Power Supply Application for secondary battery DC/DC Converter IC for Parallel Charging of 3/4 cell Li-ion & NiMH Batteries MB3879 • DESCRIPTION The MB3879 is a DC/DC converter IC for parallel charging of 3/4 cell Li-ion & NiMH batteries, which uses the


    Original
    PDF DS04-27708-2E MB3879 MB3879

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27708-2Ea ASSP for Power Supply Application for secondary battery DC/DC Converter IC for Parallel Charging of 3/4 cell Li-ion & NiMH Batteries MB3879 • DESCRIPTION The MB3879 is a DC/DC converter IC for parallel charging of 3/4 cell Li-ion & NiMH batteries, which uses the


    Original
    PDF DS04-27708-2Ea MB3879 MB3879

    GRM39B

    Abstract: MB3879 ac power adapter for notebook schematic 150w EA1 transistor Td024 GRM39B68 2N7002E C1608JB1H104K C3225JF1E106Z RB053L-30
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27708-2Ea ASSP for Power Supply Application for secondary battery DC/DC Converter IC for Parallel Charging of 3/4 cell Li-ion & NiMH Batteries MB3879 • DESCRIPTION The MB3879 is a DC/DC converter IC for parallel charging of 3/4 cell Li-ion & NiMH batteries, which uses the


    Original
    PDF DS04-27708-2Ea MB3879 MB3879 GRM39B ac power adapter for notebook schematic 150w EA1 transistor Td024 GRM39B68 2N7002E C1608JB1H104K C3225JF1E106Z RB053L-30

    RB0530L-30

    Abstract: C1608CH1H101J CDRH104R-150 FPT-24P-M03 MB39A104 TPC8102 VT100
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27231-5E ASSP For Power Management Applications General Purpose DC/DC Converter 2-ch DC/DC Converter IC with Overcurrent Protection MB39A104 • DESCRIPTION The MB39A104 is a 2-channel DC/DC converter IC using pulse width modulation (PWM), incorporating an


    Original
    PDF DS04-27231-5E MB39A104 MB39A104 F0608 RB0530L-30 C1608CH1H101J CDRH104R-150 FPT-24P-M03 TPC8102 VT100

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 LITHIUM ION BATTERY IN D U S T R IA L A P P L IC A T IO N S PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R ß S (O N ) = 34 m H (Typ.)


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    PDF TPC8102

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 LITHIUM ION BATTERY IN D U S T R IA L A P P L IC A T IO N S PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source O N Resistance : R ß S (O N )= 34mO


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    PDF TPC8102 --30V) --24V,

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR t p t f SILICON P CHANNEL MOS TYPE tt-MOSVI t 1 n ? LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance : Rj)g (ON) —34m il (Typ.) •


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    PDF TPC8102 --10//A --30V) ----24V,

    Untitled

    Abstract: No abstract text available
    Text: TPC8102 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 LITHIUM ION BATTERY IN D U S T R IA L A P P L IC A T IO N S PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R d S (O N )= 34mO (Typ.)


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    PDF TPC8102 10/xA 20ki2)

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M O S TYPE ;r-MOSVI T P C 8 1 02 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY PORTABLE MACHINES A N D TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance • High Forward Transfer Adm ittance: |Yfs| = 9S (Typ.)


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    PDF TPC8102 --10/xA --24V,

    tpc8102

    Abstract: marking A3A
    Text: TOSHIBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 INDUSTRIAL APPLICATIONS LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 34m il (Typ.) High Forward Transfer Adm ittance: |Yfs|= 9 S (Typ.)


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    PDF TPC8102 34mil tpc8102 marking A3A

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR LITHIUM ION BATTERY SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC Low Drain-Source ON Resistance : RßS (ON)= 34m iî (Typ.)


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    PDF TPC8102 --10//A --30V) 20kfl)