TQ 5100 Search Results

Contextual Info: ENG. FILE COPY DWG. NO. CONFIGURATION 5000-0029 ELECTRICAL: 50 NOMINAL IMPEDANCE OHMS DC TQ 12.4 FREQUENCY RANGE (GHZ) 335 VOLTAGE RATING (MAX.VRMS) 1.10 *.015 X FGHz VSWR (MAX.) INSERTION LOSS (DB MAX.)_ -06 RF LEAKAGE (MIN.DB DOWN) _ 65 DB-FGHz

M38DC

Abstract: SMTO-8 SFD25 6884-700
Contextual Info: THIN FILM PRODUCTS SELECTION GUIDE Topical Specifications 10 TO 250 MHz • LOW NOISE • HIGH DYNAMIC RANGE • HIGH EFFICIENCY ^^ A70-2 10-250 ^ 70 65 60 08 1.0 ^ ^ ^ 2.2 27 3.2 19.0 ^ 7íí 18.0 17.5 2 ^ 35 2.1 ^ 2.3 15 11 * * M M I 25 TQ-8/SMT0-8 2.0

cr 6850 t

Abstract: T 698 DIN 1445 l 0380 T188F
Contextual Info: Phase Control Thyristors Type VDRM VRRM V ITRMSM ITSM A kA 600.1800* ∫i²dt A²s 10ms, 10ms, tvj max tvj max *10³ VDSM = VDRM VRSM=VRRM +100V T 86 N Netz-Thyristoren 200 2 20 ITAVM/tc V TO A/°C V 180° el sin tvj = tvj 86/85 1,00 max rT (di/dt)cr tq

yh 4100

Abstract: T1321 T508n outline T1500 T718N T730 T919 T1050 T1099 T1200
Contextual Info: Phase Control Thyristors T ype V drm V rrm V Vdsm = VDRM Itrmsm A V rsm=V rrM +100V d i/d t cr tq Itsm J i2dt lTAVM/tC V(TO) U kA A2s A/°C V A/|JS MS 10ms, 10ms, 180“ el tv¡ = tv¡ = DIN IEC typ. sin ^ v jm ax Ivjm ax v jm ax 747-6 tvjm ax ^ ’ IO3 (d v /d t)cr

Contextual Info: Key Parameters VDSM = 5200 ITAVM = 2500 ITRMS = 3920 ITSM = 42000 VT0 = 1.00 rT = 0.225 V A A A V mΩ Phase Control Thyristor 5STP 25L5200 Doc. No. 5SYA 1008-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

ABB VS 4000

Contextual Info: Key Parameters VDSM = 5200 ITAVM = 5200 ITRMS = 8164 ITSM = 82500 VT0 = 1.03 rT = 0.110 V A A A V mΩ Phase Control Thyristor 5STP 52U5200 Preliminary Doc. No. 5SYA 1042-01 January, 99 Features • Patented free-floating silicon technology • Low on-state and switching losses

34N50

Abstract: TQ 5100
Contextual Info: Key Parameters VDSM = 5200 ITAVM = 3350 ITRMS = 5250 ITSM = 55000 VT0 = 1.03 rT = 0.160 V A A A V mΩ Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA 1002-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: VDSM = 5200 V ITAVM = 3600 A ITRMS = 5650 A ITSM = 55000 A VT0 = 1.03 V rT = 0.160 mΩ Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA1002-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

TQ 5100

Contextual Info: VDSM = 5200 V ITAVM = 3875 A ITRMS = 6090 A ITSM = 55000 A VT0 = 1.03 V rT = 0.160 mΩ Phase Control Thyristor 5STP 34Q5200 Doc. No. 5SYA1052-01 Sep.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

thyristor 5STP 25L5200

Abstract: 5STP25L5200
Contextual Info: VDSM = 5200 V ITAVM = 2760 A ITRMS = 4340 A ITSM = 42000 A VT0 = 1.00 V rT = 0.225 mΩ Phase Control Thyristor 5STP 25L5200 Doc. No. 5SYA1008-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

S77R14A

Abstract: S77R12B hockey stat sheet TQ 5100 HTG 7000 S77R10B S77R16A 5L02
Contextual Info: Q 2 d Ë I m û SSMSS D DD?aai IN T E R N A T IO N A L R E C T IF IE R IO R 4855452 S ï INTERNATIONAL R E C T IF IE R Data Sheet No. PD-3.114 02E 07821 D S77R SERIES 1600-1000 VOLTS RANGE 5100 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE HOCKEY PUK SCRs

Q544

Contextual Info: Q544 03 National Semiconductor 74ACQ544 • 54ACTQ/74ACTQ544 Quiet Series Octal Registered Transceiver with TRI-STATE Outputs General Description Features The 'A C Q /'A C T Q 5 4 4 is an inverting octa l transceiver co n ­ taining tw o se ts o f D-type registers fo r tem porary storage o f

ABB 5STP 52U5200

Abstract: 5stp 52U5200 5STP52U5200
Contextual Info: VDSM = 5200 V ITAVM = 5200 A ITRMS = 8164 A ITSM = 82500 A VT0 = 1.03 V rT = 0.110 mΩ Phase Control Thyristor 5STP 52U5200 Doc. No. 5SYA1042-02 Dec.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5STP25L5200

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 2760 A 4340 A 42000 A 1.00 V 0.225 mΩ Ω Phase Control Thyristor 5STP 25L5200 Doc. No. 5SYA1008-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5STP34N5200

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 3600 A 5650 A 55000 A 1.03 V 0.160 mΩ Ω Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA1002-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5STP52U5200

Abstract: ABB 5STP 52U5200
Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 5200 A 8164 A 82500 A 1.03 V 0.110 mΩ Ω Phase Control Thyristor 5STP 52U5200 Doc. No. 5SYA1042-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

SEMPO ELECTRONIC

Abstract: SMTA5-300 SMTA5-300-50 SMTA5-300-52 SMTA5-300-55 MOTOR SOFT STARTER
Contextual Info: SMTA5-300 Phase Control Thyristor Symbol Parameter ITAVM average on-state current ITRMS maximum RMS on-state current ITSM surge-current i2t i2t-value Type VRSM VRRM , VDRM SMTA5-300-50 SMTA5-300-52 SMTA5-300-55 SMTA5-300-60 SMTA5-300-65 5100 5300 5600 6100

SMTA5-700-65

Abstract: SMTA5-700 SMTA5-700-50 SMTA5-700-52 SMTA5-700-55 SEMPO ELECTRONIC
Contextual Info: SMTA5-700 Phase Control Thyristor Symbol Parameter ITAVM average on-state current ITRMS maximum RMS on-state current ITSM surge-current i2t i2t-value Type VRSM VRRM , VDRM SMTA5-700-50 SMTA5-700-52 SMTA5-700-55 SMTA5-700-60 SMTA5-700-65 5100 5300 5600 6100

ECUE1H110JCQ

Abstract: ECUV1H471 ECUY1H103 ECUE1C104ZFQ ECUV1H330 ECUV1H151 ECUV1H102 ECUE1C223ZFQ ecuv1h101 ECUE1H220
Contextual Info: DISCONTINUED PRODUCT NOTIFICATION SUBJECT: MultiLayer Ceramic Chip capacitor 1 Product discontinuations 2) ECU to ECJ part number changes BULLETIN #: PG33.032700 Effective Dates: April 1, 2000 October 1, 2000 Date: March 27,2000 Discontinuations Part Number nomenclature changes: ECU to ECJ

R3708FC45

Contextual Info: Provisional Data Data Sheet Issue:- 1  WESTCODE Date:- 3 Apr, 2001 Absolute Maximum Ratings VOLTAGE RATINGS Note 1 Repetitive peak off-state voltage VDSM Non-repetitive peak off-state voltage VRRM Repetitive peak reverse voltage VRSM Non-repetitive peak reverse voltage

Contextual Info: WESTCODE An Date:- 17 Oct, 2007 Data Sheet Issue:- 4 IXYS Company Distributed Gate Asymmetric Thyristor Type R3708FC40# to R3708FC45# Old Type Number: R1386CH40-45 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1)

R3708FC

Abstract: Westcode N thyristor R3708FC40 Westcode N thyristor Semiconductors 4000a 8000a Q 2686 r3708 R1386CH40-45 R3708FC45
Contextual Info: WESTCODE An Date:- 17 Oct, 2007 Data Sheet Issue:- 4 IXYS Company Distributed Gate Asymmetric Thyristor Type R3708FC40# to R3708FC45# Old Type Number: R1386CH40-45 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1)

R3708FC40

Abstract: asymmetric thyristor Westcode N thyristor R3708 R3708FC R1386CH40-45 rc snubber calculation 100A 1000V thyristor R3708FC45 R1386CH
Contextual Info: WESTCODE An Date:- 3 Feb, 2005 Data Sheet Issue:- 3 IXYS Company Distributed Gate Asymmetric Thyristor Type R3708FC40# to R3708FC45# Old Type Number: R1386CH40-45 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1)

Contextual Info: Provisional Data Data Sheet Issue:- 1  WESTCODE Date:- 2 Mar, 2001 Absolute Maximum Ratings VOLTAGE RATINGS   Distributed Gate Thyristor Types R2136TC48 to R2136TC52 MAXIMUM LIMITS UNITS 4800-5200 V Repetitive peak off-state voltage, note 1 VDSM Non-repetitive peak off-state voltage, (note 1)