TR 1007 TRANSISTOR Search Results

2SA1007

Abstract: 2SA1007A 2SC2337A C2337A A1007A 2SC2337 72-SA
Contextual Info: SEC SILICON POWER TRANSISTORS ELEC TR O N DEVICE 2SA1007,2SA1007A/2SC2337,2SC2337A AU DIO FREQUENCY POWER AM PLIFIER,HIG H FREQUENCY POWER AM PLIFIER AND HIGH CURRENT SW ITCHING PNP/N PN SILICON EPITAXIAL TRANSISTOR BUILT IN EMITTER BALLAST RESISTORS DESCRIPTION

2SA1241

Abstract: RN6006 TA8490F U1GWJ44
Contextual Info: TOSHIBA TA8490F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP TA8490F 3-PHASE FULL WAVE BRUSHLESS DC MOTOR DRIVER IC FOR CD-ROM DRIVES This 3-phase, full-wave, brushless DC motor driver 1C has been developed for use in CD-ROM drive spindle motors. The TA8490F contains in its upper stage a discrete power

tr 1007 transistor

Contextual Info: TO SH IB A TA8490F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP TA8490F 3-PHASE FULL WAVE BRUSHLESS DC MOTOR DRIVER IC FOR CD-ROM DRIVES This 3-phase, full-wave, brushless DC motor driver 1C has been developed for use in CD-ROM drive spindle motors.

la 4127

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: MMBTA06WT1 Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model − 4 kV ESD Rating: Machine Model − 400 V http://onsemi.com Features • Pb−Free Package May be Available. The G−Suffix Denotes a COLLECTOR 3 Pb−Free Lead Finish

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: T O SH IB A TA8490F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP TA8490F 3-PHASE FULL WAVE BRUSHLESS DC MOTOR DRIVER IC FOR CD-ROM DRIVES This 3-phase, full-wave, brushless DC motor driver 1C has been developed for use in CD-ROM drive spindle motors.

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

VPT09051

Abstract: VPT09050 SPD01N50M2 SPU01N50M2 DIODE MARKING CODE 623
Contextual Info: In fin eon SPU01N50M2 SPD01N50M2 Target data sheet technologies Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/df rated • Optimized capacitances • Improved noise immunity

Microwave Oven Inverter Control IC

Contextual Info: PaiKföonic Others AN6718N Microwave Oven Inverter Control 1C • Overview The AN6718N is an IC for resonance type inverter con­ trol of microwave oven. It can directly control the IGBT Insulated Gate Bipolar Transistor and incorporates the various protective functions.

Irgbc20fd2

Contextual Info: International PD - 9.788 ^Rectifier IRGBC20FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECO VERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all “tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

Contextual Info: SIEMENS BUZ 346 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode vvoyss ' fé i • Avalanche-rated Pin 1 Pin 2 G Type B U Z 346 Vbs 50 V b 58 A flDS on 0.018 n Pin 3 D S Package Ordering Code TO-218AA C67078-S3120-A2 Maximum Ratings

transistor 7g

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PHP10N10E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

MC 140 transistor

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PINNING - SQT404 PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation Junction temperature Drain-source on-state resistance

D11AL

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PHP10N10E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: BSL207SP Rev. 2.02 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS on 41 mΩ • Super Logic Level (2.5 V rated) ID -6 A • 150°C operating temperature P-TSOP6-6 • Avalanche rated • dv/dt rated

BP317

Abstract: BSX20 TRANSISTOR bsx20
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BSX20 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 14 Philips Semiconductors Product specification NPN switching transistor BSX20

Contextual Info: BSL207SP Rev. 2.05 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS on 41 mΩ • Super Logic Level (2.5 V rated) ID -6 A • 150°C operating temperature P-TSOP6-6 • Avalanche rated • dv/dt rated