TR 13003 T Search Results

X 13003

Abstract: F 13003 13003 TRANSISTOR c s 13003 TRANSISTOR transistor 13003 E 13003 TRANSISTOR TR 13003 transistor REGULATOR 13003 13003 x 13003 TRANSISTOR
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company C13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

g 13003

Abstract: LM 13003
Contextual Info: SGS-THOMSON ^ □ ^ © i^ © ? ^ iD © S SGS 13002/13003 SGS 13002 T/13003 T HIGH VOLTAGE SWITCHING APPLICATIONS DESCRIPTION The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa

TR 13003

Abstract: transistor cd 13003 x 13003 TRANSISTOR TR 13003 transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company C13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

transistor ST 13003 w, TO-126

Abstract: 13003 transistor smps circuit electronic ballast by transistor 13003 transistor ST 13003 w 13003 TRANSISTOR st 13003 TRANSISTOR npn 13003 Transistor NPN Power TO 126 13003 charger E 13003 b TRANSISTOR 78/13003 transistor smps circuit
Contextual Info: ST13003, ST13003-K High voltage fast-switching NPN power transistor Datasheet - production data Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications 1 2 3 • Electronic ballast for fluorescent lighting CFL

HA13003

Contextual Info: HA13003 -y° u y -y ~7 °, pw m ->r H y £ |g § f t l X% * -f v ^ <D • -fr 5 c £ K J; 9 , P W M r > ' >-, i i. — -• h5 * /¡'fal<n=Fi£$i'J-'tc{,' o s < -y tr— -J 14 t‘> T ’i -rf£ hV; 5 >i a- p w m fts J; Vh'7'f T > o •y 9 D I L ^ V >r - i? t t » * T 'W #

Contextual Info:  Electrical / Environmental Low Profile Surface Mount Inductors Sfor RCoompH t n a li ls • • • • ode ‘LF’ M Operating Temperature Range Ambient Temperature, Maximum Insulation System Temperature Rise, Maximum -40°C to +130°C 80°C

transistor 13003 AD

Abstract: transistor eb 13003 TU F 13003 transistor Eb 13003 A eb 13003 transistor LB 13003 C 0/transistor 13003 AD ST13003
Contextual Info: S G S - T H O M S O N M œ Ë IL Ë O T fô ® K I S T 13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:

transistor ST 13003 w, TO-126

Abstract: electronic ballast for fluorescent lighting 13003 electronic ballast for fluorescent lighting ST13003 transistor electronic ballast by transistor 13003 electronic ballast 13003 st 13003 TRANSISTOR npn TR 13003 transistor E 13003 TRANSISTOR transistor 13003
Contextual Info: ST13003-K High voltage fast-switching NPN power transistor General features • Medium voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting CFL

transistor ST 13003 w, TO-126

Abstract: 13003 transistor smps circuit electronic ballast by transistor 13003 st 13003 TRANSISTOR npn transistor ST 13003 w TR 13003 transistor st 13003 w transistor switch 13003 13003 SMPS 13003 NPN Transistor features
Contextual Info: ST13003-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting CFL ■ SMPS for battery charger

13003 h

Abstract: am/BAT 13003 h
Contextual Info: MODEL H M 77 SERIES Surface Mount Inductors OUTSTANDING FEATURES High performance low core loss powder iron core for excellent high frequency application Low profile, designed for machine placement Compatible with vapor phase and infra-red reflow soldering

13003

Abstract: 13003 application notes 25006 32007
Contextual Info: MODEL HM77 SERIES Low Profile Surface Mount Inductors FEATURES AND BENEFITS • • • • High performance low loss powder iron core is excellent for high frequency applications Low profile, designed for machine placement Compatible with vapor phase and infrared reflow soldering

13003 h

Abstract: am/BAT 13003 h
Contextual Info: M O D EL H M 7 7 SER IES Surface Mount Inductors OUTSTANDING FEATURES High perform ance low core loss powder iron core for excellent high frequency application Low profile, designed for m achine placement Compatible with vapor phase and infra-red reflow soldering

2N5576

Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

A84 marking code

Abstract: AXH marking AXH 2510
Contextual Info: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book LOW VOLTAGE POWER CAPACITORS ViShAy ESTA Notes: 1. To navigate: a Click on the Vishay logo in any document to go to the overview page. b) Click on the document name within the overview to go directly to the

RT3062

Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

MP2143

Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

DTS108

Abstract: 2n2585 DTS103 DTS106 BUY27
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

KL8503

Abstract: CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

TI3028

Abstract: TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

A400M

Abstract: ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

2N2128

Abstract: T4 0660 2N5577 2N5579 MD38
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - 40°c 45°C # - 5 0 °C 6 0 °C 0 - §- k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

AD166

Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT

B170008

Abstract: 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

13009 Jt 43

Abstract: pj 72 4006A Darfon 13003 HJ TO 92 4006a E 13007 0 13001 LZ DF 13003 4034b 13009 FSC
Contextual Info: MIL-M-38510/57D 30 April 1984 su p e r s e m i r e MIL-M-38510/57C 21 M a y 1 9 8 0 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, POSITIVE LOGIC CMOS, STATIC SHIFT REGISTER, MONOLITHIC SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d ments a nd