TR 28 Search Results

2SD683A

Abstract: 2SD683
Contextual Info: TOSHIBA íDISCRETE/OPTO} 9097250 TOSHIBA Tb CD IS C R E T E / OPT O dT I t OITESO 0D077SD ^ 2SD683 .2SD683A, SILICON NPN TR IP LE DIFFUSED TYPE _ DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS Unit in mm HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS.

TMS47C256 ROM

Contextual Info: TE XA S INS TR -CASIC/NEHORY} 77 ADVANCE INFORMATION 0^1725 DE 0040=107 4 | ~ TMS47C256 32,768-WORD BY 8-BIT READ-ONLY M EM O RY NOVEMBER 1985 N PACKAGE • 32,768 X 8 Organization • Fully Static No Clocks, No Refresh • All Inputs and Outputs TTL Compatible

MG300H1FL1

Abstract: Diode 864
Contextual Info: G TR MODULE MG300H1FL1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M 6 FEATURES: / 4- 0& 5± O. 3 YJjtj . The Collector is Isolated from Case. yPi. Bl BX . With Built-in Free Wheeling Diode . High DC Current Gain : hFE=80 Min. (Ic=300A)

Contextual Info: REFERENCE DATA Production Standard Note TK111XXM Table of C ontents 1 . S tr u c tu r e /F e a tu r e 2 . E lectrical C haracteristics Specification for S ta n d ard Device 3 . P in Layout 4 . T est C ircuit 5 . Block D iagram D efinition of Term s Sensor C ircuit

1117F

Contextual Info: T O S H IB A RN1112F,RN1113F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R •m N ■ 1117F 'm m m m m g R N 1 1 1 3 F■ m m m 'm m m m m tr SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors

27C512-3

Abstract: 27c512-45 TG-14 27C512 27C512-2
Contextual Info: TEXAS "Ô 961725 INSTR TEX A S {ASIC/MENORY} INS TR PRODUCT PREVIEW 77 d e A S IC /M EM O R V T 0 ^ 1 7 5 5 77C 4 0 9 33 G D Ll ü li 3 3 D TMX27C512 524,288-BIT ERASABLE PROGRAM M ABLE READ ONLY M EM O RY N O V E M B E R 1965 J PACKAGE Organization . . . 64K x 8

ta7279

Contextual Info: TA7279P/AP DUAL BRIDGE DRIVER. TA7279P/AP a r e d u a l b r id g e d r i v e r d e sig n ed f o r DC motor r o t a t i o n c o n tr o l . G . Wide Range of O p eratin g V o ltag e : Vcc opr =6~18V(AP) Vs(opr)=6~16V(P) . O utput C u rre n t Up to l.OA(AVE), 3.0A(PEAK)

Contextual Info: 8 T H IS D R A W IN G 15 7 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T 2005 B Y TYCO E LE C TR O N IC S 4 3 2 P U B L IC A T IO N R IG H T S LOC RESERVED. AD C O R P O R A TIO N . R E V IS IO N S D IS T 25 LTR G D E S C R IP T IO N REVISED PER

74AS282

Contextual Info: PRODUCT PREVIEW SN54AS282, SN 74AS282 LOOK AHEAD CARRY GENERATOR WITH SELECTABLE CARRY INPUTS D 2 8 1 1 , D EC EM BE R 1 9 8 3 - R E V iS E D M A Y 1 9 8 6 S N 54A S 282 . . . J PACKAGE S N 74A S 282 . . . D W O H N PACKAGE Selectable Carry Inputs Version of the

Contextual Info: TOSHIBA TC74AC164 8-bit Shift Register S-IN, P-OUT Features: • High Speed: fmax = 170MHz (typ.) at Vco = 5V • Low Power Dissipation: • High Noise Immunity: VN,H=VNIL=28% Voc (min.) • Symmetrical Output Impedance: llOHl = I o l = 24mA (min.). Capability of driving 50ft transmission lines.

Contextual Info: UC5172 y U IM IT R O D E Octal Line Driver DESCRIPTION FEATURES Eight Single-Ended Line Drivers in One Package Meets Standards EIA232E/CCITT V.28, and EIA423A/CCITT V.10/X.26 Single External Resistor Controls Slew Rate Wide Supply Voltage Range Tri-State Outputs

Contextual Info: SMJ44C250 262 144 BY 4-BIT MULTIPORT VIDEO RAM SGMS037 — JANUARY 1991 * Military Operating Temperature Range JD Package* Top View . . , - 5 5 ° C t o 125°C DRAM: 262 144 Words SAM: 512 Words * * * x x 4 Bits 4 Bits 28 : 27 : 3 26 : SDQ2 TRG c 4 25 :

Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. RELEASED COPYRIGHT BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - LOC ALL RIGHTS RESERVED. DIST AJ R E V IS IO N S 6 LTR DESCRIPTION A GROUND DATE DWN 280C T2005 REVISED PER EC OS14 - 0 1 5 0 - 0 5 APVD REH JL POST

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz

TMS3478

Abstract: tms4256
Contextual Info: REV * * * As Of APR/01/1990 T M S 3 4 7 8 SINGLE CHIP VOICE RECORDER/PLAYER - 28 PIN Y-SHRINK 400 MIL Dual In-line Package - CMOS Si-GATE PROCESS - SINGLE +5V POWER SUPPLY 6 FULL DIGITAL CVSD WITH HIGH FIDELITY - THREE POINTS BASE DATA SAMPLING CLOCK SELECTION (16K,32K and 64KHz)

Contextual Info: SN75146 DUAL DIFFERENTIAL LINE RECEIVER SLLS0158 - FEBRUARY 1986 - REVISED MAY 1995 D OR P PACKAGE CTOP VIEW Meets or Exceeds the Requirements of ANSI EIA/TIA-422-B and -423-B Meets or Exceeds the Requirements of ANSI EIA/TIA-232-E and ITU Recommendation V.28 With External

Contextual Info: SN75LBC241 LOW-POWER LinBiCMOS MULTIPLE DRIVERS AND RECEIVERS SLLS137E - MAY 1992 - REVISED JANUARY 1999 • Operates With Single 5-V Power Supply • Meets or Exceeds the Requirements of TIA/EIA-232-F and ITU Recommendation V.28 • Improved Performance Replacement for

CT674

Abstract: 54HCT574
Contextual Info: SN54HCT574, SN74HCT574 OCTAL D TYPE EDGE TRIGGERED FLIP FLOPS WITH 3 STATE OUTPUTS D 2804. M A R C H • Inputs are TTL-Voltage Compatible • High-Current 3-State Noninverting Outputs Drive Bus-Lines Directly or Up to 15 LSTTL Loads Bus-Structured Pinout

A3Z03

Abstract: SN74AS856
Contextual Info: SN54AS856, SN74AS856 8 BIT UNIVERSAL TRANSCEIVER PORT CONTROLLERS D 2 B 1 4 , DEC EM BE R 1 9 8 3 - R E V IS E D M A R C H 1 9 8 5 • Included Among the Package Options are Com pact, 24-P in, 300-m il-W ide DIPs and Both 28-Pin Plastic and Ceramic Chip Carriers

Contextual Info: -TC74HC259AP/AF/AF N 8-B IT ADDRESSABLE LATCH The TC74HC259A is a high speed C M O S A D D R E S S ­ A B L E L A T C H fabricated w ith silicon gate C 2 M O S technology. It achieves the high speed operation s im ila r to equivalent LSTTL

P8251A

Abstract: P82C51A tmp8251 82C51A P8251
Contextual Info: T O S H IB A TM P82C51A TMP82C51AP-2 /TMP82C51AP-10 TMP82C51 AM-2/TMP82C51 AM-10 PROGRAM M ABLE COMMUNICATION INTERFACE 1. GENERAL DESCRIPTION T he TM P82C51A is th e in d u stry sta n d a rd U n iv ersa l S ynchron o u s/A sy n ch ro n o u s R eceiver/T ransm itter USART th a t is fabricated u sin g C-MOS silicon g a te technology.

Contextual Info: TM4164EC4 65,536 BY 4-BIT DYNAMIC RAM MODULE NOVEMBER 1983 - REVISED NOVEMBER 1985 SINGLE-IN-UNE PACKAGE 6 5 ,5 3 6 X 4 Organization TOP VIEW Single 5-V Supply (10% Tolerance) 22-Pin Single-in-Line Package (SIP) Utilizes Four 64K Dynamic RAMs in Plastic

912BI

Contextual Info: TOSHIBA NIOS MEMORY PRODUCTS TC55329P/J-20, TC55329P/J-25 TC55329P/J-35 DESCRIPTION The TC55329P/J is a 294,912 b i t s high speed s t a tic random access memory organ ized as 32,768 words by 9 b i t s using CMOS technolo gy, and operated from a s in g le 5 -v o lt supply.

TMS34061FNL

Abstract: lad1-5v TMS34070NL S3406 TL 413 SPVU001 MJ340 TA2625
Contextual Info: SM J 3 4 0 1 0 GRAPHICS SYSTEM PROCESSOR NOVEMBER 1 98 8 - • Military Temperature . . . - 5 5 ° C to 12 5°C • Instruction Cycle Time: 200 ns . . . S M J3 4010-40 160 ns . . . S M J3 4010-50 REVISED SEPTEMBER 1989 GB PACKAGE 68-PIN GRID ARRAY TOP VIEW