TR 505 DIODE Search Results

Contextual Info: • 2 S K 1 3 1 8 44^505 DD1333b TEM ■ HIT4 HITACHI/ OPTOELEC TR ONIC S blE T> SIUCON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current 4 V Gate Drive Device - Can be driven from 5 V source

Contextual Info: CONTROLLED AVALANCHE DIODE V17 •fl ■ il Unit In mm inch ■4$ ft OUTLINE DRAWING X • K # j£ Ò »cn 3 ^- Direction of polarity ■ FE A T U R E S 00.8 10.031 • T ra n sie n t surge voltage protection. • Diffused-junction. G lass passivated encapsulated.

Contextual Info: H n ACH 1 H O P T O E L b C I RUN 1 Ò S 5 - iiS S T u b • 7 ' * 1? D T ~ O t'l3 09808 K Controlled Avalanche Diode 1 1 1 7 "“ • 68C M »E iMMTbEOS QDOTflafl h | T TrSv» :12° ~400V

Contextual Info: VOLTAGE CONTROLLED VCXO Q-TECH CORPORATION CRYSTAL CLOCK OSCILLATORS -5.2Vdc & 5.0Vdc - 1kHz to 155.52MHz Description Q-Tech’s voltage-controlled crystal oscillators (VCXO) consist of a varactor diode and associated circuitry such as a bipolar transistor or logic IC amplifier, logic output buffers

QT88

Abstract: hcmos oscillator design 16MHZ 5v C549C EAR99 QT50 QT78 qt41 QT50V 9940 QT57
Contextual Info: VOLTAGE CONTROLLED VCXO Q-TECH CORPORATION CRYSTAL CLOCK OSCILLATORS -5.2Vdc & 5.0Vdc - 1kHz to 155.52MHz Description Q-Tech’s voltage-controlled crystal oscillators (VCXO) consist of a varactor diode and associated circuitry such as a bipolar transistor or logic IC amplifier, logic output buffers

Contextual Info: VOLTAGE CONTROLLED VCXO Q-TECH CORPORATION CRYSTAL CLOCK OSCILLATORS -5.2Vdc & 5.0Vdc - 1kHz to 155.52MHz Description Q-Tech’s voltage-controlled crystal oscillators (VCXO) consist of a varactor diode and associated circuitry such as a bipolar transistor or logic IC amplifier, logic output buffers

hcmos oscillator design 16MHZ 5v

Abstract: QT62V 29.5MHZ CRYSTAL 155.52mhz QT62 10KH-ECL Quartz oscillator 30MHz
Contextual Info: VOLTAGE CONTROLLED VCXO Q-TECH CORPORATION CRYSTAL CLOCK OSCILLATORS -5.2Vdc & 5.0Vdc - 1kHz to 155.52MHz Description Q-Tech’s voltage-controlled crystal oscillators (VCXO) consist of a varactor diode and associated circuitry such as a bipolar transistor or logic IC amplifier, logic output buffers

Contextual Info: VOLTAGE CONTROLLED VCXO Q-TECH CORPORATION CRYSTAL CLOCK OSCILLATORS -5.2Vdc & 5.0Vdc - 1kHz to 155.52MHz Description Q-Tech’s voltage-controlled crystal oscillators (VCXO) consist of a varactor diode and associated circuitry such as a bipolar transistor or logic IC amplifier, logic output buffers

motorola DSR 505

Abstract: DSR 505 r13 Rocker Switch fireberd 6000a schematic db25 pin male SP504 4 pin dip switch 670 OHM RESISTOR T351C106K10AS301 ttc fireberd 6000a component schematics
Contextual Info: SP504/505 Evaluation Board Manual • Easy Evaluation for the SP504 or SP505 Multi-Protocol Transceiver ■ Probe Points Accessable to Driver and Receiver I/O Pins ■ DB-25 Serial Port Connector Adheres to EIA-530 Pinout ■ Interface Mode Select Through

1000NR-14D

Abstract: 1000NR14D 1000NR20D 0216NR20D 0022ZR07D 0450NR12D 0068ZR100 0047ZR07D 0018ZR05D 0018ZR07D
Contextual Info: Varistors are voltage-dependent, non-linear resistors which have symmetrical, sharp, breakdown characteristics similar to back-to- back Zener diodes. They are designed ior transient suppression in electrical circuits. Transients can result from the sudden release ol previously

RTXP 24

Abstract: RTXP 24 abb DIMENSIONS RADSS RTXP 24 abb 1mrk 002 hrah 371-EA 371-EB rxmd 2 RTXP 18 abb mm
Contextual Info: *HQHUDO GLIIHUHQWLDO SURWHFWLRQ 5 '   1MRK 505 031-BEN Page 1 Revision B Issued: November 2003 Data subject to change without notice Three-Phase Terminal HDWXUHV Three One-Phase Terminals • High speed general differential protection. Minimal operating time around 10 ms

Contextual Info: HE1303SG/ML InGaAsP IRED Description The HE1303SG/ML are 1.3 |im band InGaAsP infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features Package Type • HE1303SG: SG

IPM30A V1.0

Contextual Info: FAST RECOVERY DIODE 30KF50E 30KF50B 33A /500V /trr : 70nsec FEATURES o Similar to TO- 247AC Case o Ultra — Fast Recovery ° Low Forward Voltage Drop o Low Power Loss, High Efficiency ° High Suiige Capability • 100 Volts thru 600 Volts Types Available

Diode BAW 62

Abstract: BAW 62 SOT23 DIODE 504 BAW 43 Q62702-A471 diode fr 107 7x7x1 SOT-23 ZF
Contextual Info: B A W 56 S iliziu m -P la n a r-D o p p e ld io d e Die epitaktische Siliziu m -P lan ar-D op peldiode B A W 56 besteht aus zw ei Einzeldioden mit gemeinsamer Anode. Die Diode im Kunststoffgehäuse 23 A 3 DIN 41 869 S O T -2 3 findet Anw endung als schneller Schalter speziell für D ünn- und D ickfilm schaltungen. Der Typ

MINIATURE CIRCUIT BREAKER

Abstract: CM01
Contextual Info: %UHDNHU SURWHFWLRQ WHUPLQDO 5 %   1MRK 505 093-BEN Page 1 Revision: Issued: March 2003 Data subject to change without notice HDWXUHV • Open terminal with extensive configuration possibilities and expandable hardware design to meet specific user requirements

Contextual Info: HL1322A/AC InGaAsP LD Description The HL1322A/AC are 1.3 |im band InGaAsP laser diodes with a double heterojunction structure. They are relatively high power output 10 mW devices as compared to the HLP5400 or the HL1321AC. They are suitable as light sources for high capacity long distance optical fiber communication systems and various

abb ar1

Abstract: 3 pole circuit breaker ABB fox 515 abb chok coil Capacitive voltage transformer ir people counting wr 90 directional coupler FDSD RTC12 2115x
Contextual Info: 3URWHFW,7 %UHDNHU SURWHFWLRQ WHUPLQDO 5 %   1MRK 505 098-BEN Page 1 Revision: B Issued: November 2003 Data subject to change without notice HDWXUHV • A terminal with extensive configuration possibilities and expandable hardware design to meet specific user requirements

UF diodes common anode

Contextual Info: ON Semiconductort MMBD717LT1 Common Anode Schottky Barrier Diodes ON Semiconductor Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: KC74125B 1/4 INCH CCD IMAGE SENSOR FOR EIA CAMERA INTRODUCTION 14Pin Cer DIP The KC74125B is an interline transfer CCD area image sensor developed for EIA 1/4 inch optical format video cameras, surveillance cameras, object detectors and image pattern recognizers. High sensitivity is achieved through onchip micro lenses and HAD Hole Accumulated Diode

diode gp 805

Abstract: GP804 GP505 GP504 GP506 GP806 "GAD Semiconductors" GH506 diode gp DIODE GP504
Contextual Info: qacf J ♦ Very high maximum operating junction temperature up to 260°C ♦ Very low and temperature independent dynamic recovery characteristics (trr, lRM, Qrr, switching losses) SEMICONDUCTORS ♦ Very low leakage current at the operating temperature

CM500S

Abstract: CXD1267AN ICX086AL
Contextual Info: ICX086AL 1/4-inch CCD Image Sensor for EIA B/W Video Cameras Description The ICX086AL is an interline CCD solid-state image sensor suitable for EIA B/W video cameras. High sensitivity is achieved through the adoption of HAD Hole-Accumulation Diode sensors.

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG30D2DM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

diode pj

Abstract: PJ 63 MM diode pj 66 diode pj 83 diode pj 29 diode pj 82 diode pj 56 diode pj 46 diode 40576 rapide
Contextual Info: A B B SEMICONDUCTORS AG 3ÖE CSR Reverse Conducting Thyristors CSR Rückwärtsleitende Thyristoren Reverse Conducting Thyristors Rückwärtsleitende Thyristoren - Thyristor und Diode auf einer Siliziumtablette - Platz- und Gewichtsersparnis - Höhere Betriebssicherheit

HL1323

Contextual Info: HL1323DM InGaAsP LD Description The HL1323DM is a 1.3 pm band InGaAsP laser diode with a double heterostructure. It is suitable as a light source for optical fiber communication systems, such as LAN, CATV, and LJN. Features Fiber Specifications • Long wavelength output: Ap = 1260 to 1340 nm