TR FET K 2134 Search Results

fet array

Abstract: E 212 fet PHN708 SC13 SSOP24 MDA790 SSOP24 209
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHN708 7 N-channel 80 mΩ FET array enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 1998 Mar 17 Philips Semiconductors Product specification

2SK2134

Abstract: 2SK2134-Z MEI-1202 MP-25 TEA-1035 NEC 2sk2134
Contextual Info: DATA SHEET à NEC MOS FIELD EFFECT POWER TRANSISTORS 2SK2134, 2SK2134-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2134, 2SK2134-Z are N-channel Pow er M O S Field Effect U nit : m m Transistors designed for high voltage switching applications.

2SK2134-Z

Abstract: 2SK2134 MEI-1202 MP-25 TEA-1035 tea 1402
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET à NEC MOS FIELD EFFECT POWER TRANSISTORS 2SK2134, 2SK2134-Z SWITCHING N-CHANNEL POWER MOS FET

mda801

Abstract: MDA804 MDA800 MDA806 PHN405 SC13 SSOP16 MDA802 MDA803 1g28
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHN405 4 N-channel 60 mΩ FET array enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 1998 Mar 17 Philips Semiconductors Product specification

NEC k 2134

Abstract: 2sk2134
Contextual Info: DATA SHEET NEC 1 ,f A MOS FIELD EFFECT POWER TRANSISTORS 2SK2134, 2SK2134-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2134, 2SK2134-Z are N-channel Pow er M O S Field Effect Unit : m m Transistors designed fo r high voltage switching applications.

Contextual Info: DISC RETE S E M IC O N D U C TO R S InlEET PHN708 7 N-channel 80 m£2 FET array enhancement mode MOS transistors 1998 Mar 17 Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS

2SK2134

Abstract: 2SK2134-Z MEI-1202 MP-25 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2134, 2SK2134-Z SWITCHING N-CHANNEL POWER MOS FET

diode AR S1 99

Abstract: diode AR s1 56
Contextual Info: DISC RETE S E M IC O N D U C TO R S InlEET PHN405 4 N-channel 60 m£2 FET array enhancement mode MOS transistors 1998 Mar 17 Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

TSP 817

Abstract: BUK9830-30 PHT6N03LT
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHT6N03LT TrenchMOS transistor Logic level FET Product specification Supersedes data of September 1997 File under Discrete Semiconductors, SC13a November 1997 Philips Semiconductors Product specification TrenchMOS transistor

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

PHC2300

Abstract: el 1533 P-Channel Enhancement FET MAM118
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHC2300 Complementary enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Oct 24 Philips Semiconductors Product specification Complementary enhancement mode

TC-799

Abstract: NEC 2sk2134 nec 2134 2sk2134
Contextual Info: i A I A di il. t ! MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 4 , 2 S K 2 1 3 4 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistors designed for high voltage switching applications.

NE5534 replacement

Abstract: k 2134 SSM2013 ssm ad tr fet K 2134 sy 200 SSM2134 SSM2015 riaa
Contextual Info: PMI SSM-2134 A * 5“^ S f t e LOW NOISE AUDIO OPERATIONAL AMPLIFIER ^ P re c is io n M onolith ic*» Inc. FEATURES GENERAL DESCRIPTION • Very Low Input Noise Voltage. 3.5nV/ -/H z Typ • Wide Small-Signal B andw idth. 10MHz Typ

Contextual Info: IN TE G R A TE D C lR C U fT S TD F5242T Brushless DC motor drive circuit Preliminary specification File under Integrated Circuits, IC11 Philips Semiconductors 1997 Apr 23 P H IL IP S PHILIPS P h ilip s S e m ic o n d u c t o r s P re lim in a ry s p e c if ic a t io n

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

TDA5242

Abstract: FETs Field Effect Transistors TDF5242T back-emf ICS 1210 Pressure Sensor
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDF5242T Brushless DC motor drive circuit Preliminary specification Supersedes data of 1997 Apr 23 File under Integrated Circuits, IC11 1997 Sep 12 Philips Semiconductors Preliminary specification Brushless DC motor drive circuit

4107S

Contextual Info: INTEGRATED CIRCUITS [M m SM EET Ê-.; jiv: ”jn d j U ni BUS TEA0679T l2C-bus controlled dual Dolby* B-type noise reduction circuit for playback applications Product specification Supersedes data of 1998 Jun 24 File under Integrated Circuits, IC01 Philips

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package

intel 845 MOTHERBOARD pcb CIRCUIT diagram

Abstract: 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a
Contextual Info: DL128/D Rev. 7, Mar-2002 Analog Integrated Circuits Power Management, Signal Conditioning and ASSP Devices Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

Contextual Info: / T u i m TECHNOLOGY Gain Bandwidth Product, Av = +1 Slew Rate Low Cost Output Current Settling Time Differential Gain Error Differential Phase Error High Open Loop Gain Single Supply +5V Operation Output Shutdown flP P llC flT IO n S • ■ ■ ■ ■ Ultra High Speed