TR MARKING 18T Search Results

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

MBC517

Abstract: 74688 application
Contextual Info: BCcomponents DATA SHEET 122 SAL-RP Aluminum electrolytic capacitors Solid Al, Radial Pearl Product specification Supersedes data of 18th January 2000 File under BCcomponents, BC01 2000 Apr 27 BCcomponents Product specification Aluminum electrolytic capacitors

76228

Contextual Info: BCcomponents DATA SHEET 128 SAL-RPM Aluminum electrolytic capacitors Solid Al, Radial Pearl Miniature Product specification Supersedes data of 18th January 2000 File under BCcomponents, BC01 2001 Dec 10 BCcomponents Product specification Aluminum electrolytic capacitors

70339

Abstract: 36479 MBC182 equivalent tn 2222 116 RLL
Contextual Info: BCcomponents DATA SHEET 116 RLL Aluminum electrolytic capacitors Radial Long Life Product specification Supersedes data of 18th January 2000 File under BCcomponents, BC01 2001 Nov 05 BCcomponents Product specification Aluminum electrolytic capacitors Radial Long Life

Contextual Info: 22 ChipInductors-1008HTSeries 2520 T h e s e lo w p ro file in d u c to rs a re 4 0 % th in n e r th a n o u r c o n v e n tio n a l 1 0 0 8 b o d y s iz e s . T h e y fe a tu re s ta n d a rd in d u c ta n c e to le ra n c e s o f 5 -1 0 % , h ig h S R F s a n d v e ry h ig h Q.

18t10gh

Abstract: 18t10
Contextual Info: Advanced Power Electronics Corp. AP18T10GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Fast Switching Characteristics R DS ON Low Gate Charge G RoHS-compliant, halogen-free 100V 160mΩ ID 9A S Description D (tab) G Advanced Power MOSFETs from APEC provide the designer with the best

pot3106

Abstract: POT3106W-1-503 3321H-1-103 Futaba Potentiometer POT3106W-1-502 3321p 3107 trimmer 3321H-1-101 POT3104 POT3107
Contextual Info: This is the PDF file of catalog No.R50E-9. No.R50E9.pdf 99.8.13 TRIMMER POTENTIOMETER TRIMMER POTENTIOMETER Murata Manufacturing Co., Ltd. Cat.No.R50E-9 This is the PDF file of catalog No.R50E-9. No.R50E9.pdf 99.8.13 What kind of Trimmer Potentiometer are you looking for?

RENESAS marking code package

Abstract: RENESAS marking code DEVICE MARKING CODE table for renesas cy25
Contextual Info: RD3CYD08 IGBT Driver REJ03D0179-0400 Rev.4.00 Oct. 06, 2005 Description The RD3CYD08 has two–input AND gate in a 5 pin package. This product is suited as IGBT Driver IC for the strobe. Features • • • • Supplied on emboss taping for high-speed automatic mounting.

18t10gh

Abstract: 18t10gj
Contextual Info: AP18T10GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 100V RDS ON 160mΩ ID G 9A S Description G Advanced Power MOSFETs from APEC provide the designer with

18t10a

Abstract: 18t10agh
Contextual Info: Advanced Power Electronics Corp. AP18T10AGH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Fast Switching Characteristics 100V R DS ON Low Gate Charge G 160mΩ ID RoHS-compliant, halogen-free 9A S Description Advanced Power MOSFETs from APEC provide the designer with the best

Contextual Info: AUIRS2191S Product Summary Features • • • • • • • • • • • • Floating channel designed for bootstrap operation. Fully operational up to +600V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10V to 20V

RENESAS marking code

Contextual Info: RD3CYD08 IGBT Driver REJ03D0179-0500 Rev.5.00 Jan 10, 2008 Description The RD3CYD08 has two–input AND gate in a 5 pin package. This product is suited as IGBT Driver IC for the strobe. Features • • • • Supplied on emboss taping for high-speed automatic mounting.

PUSN0005KA

Abstract: RD3CYD08 RD3CYD08CME RD3CYD08VSE RJP4002ANS RJP4002ASA RJP4003ANS RJP4003ASA igbt xenon tube RJP4002
Contextual Info: RD3CYD08 IGBT Driver REJ03D0179-0600 Rev.6.00 Apr 22, 2008 Description The RD3CYD08 has two–input AND gate in a 5 pin package. This product is suited as IGBT Driver IC for the strobe. Features • • • • Supplied on emboss taping for high-speed automatic mounting.

Dale RW 69 MO 126

Abstract: lr07c marking 18T 18T marking
Contextual Info: A COMPANY OF MODELS T 18 and T 18T C erm et Trim m ers 3/4" [19.0] R ectangular, Industrial Grade, M ultiturn HIGH PERFORMANCE PLASTIC CASE T18 Standard Housing T18T Transparent Housing FINE PITCH SCREW FOR OUTSTANDING SETTING ABILITY - -

Zener diode smd marking S4

Abstract: DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz
Contextual Info: . COMPANY PROFILE Shenzhen Luguang Electronic Technology CO.,LTD.is a high-tech enterprise,which is specializing in R&D,manufacturing,and selling of various piezoelectric materials,piezoelectric frequency components, diodes,transistors,modules,digital television receivers,wireless controllers,etc.

Contextual Info: AP18T10GI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Fast Switching Performance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Single Drive Requirement ▼ Full Isolation Package BVDSS 100V RDS ON 160mΩ ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with

HD74LV1G66A

Abstract: HD74LV1G66ACME HD74LV1G66AVSE HD74LV4066A PTSP0005ZC-A PUSN0005KA-A
Contextual Info: HD74LV1G66A Analog Switch REJ03D0069-0700 Rev.7.00 Mar 21, 2008 Description The HD74LV1G66A has an analog switch in a 5 pin package. Switch section has its enable input control C . Highlevel voltage applied to C turns on the switch section. Applications include signal gating, chopping, modulation or

6Bs smd transistor

Abstract: e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 RSV 1.6 ZE 36 163063 pcb connectors 6BS SMD 163953
Contextual Info: New in this catalogue Connectors BLZ AH Page 5/134 BLDT 5.08 6 Page 5/104 BLZF 5.08 and BLZF 5.00 SLZF 5.08 Page 5/107 Pages 5/103 and 5/124 Product overview connectors Heavy-duty connectors Modular Connector-System ConCept Rail-Adaptor-System DiRect Pages 5/2 - 5/23

dd417

Contextual Info: 'd a t a b427525 GÜM17SE ST2 « N E C E NEC sh eet MOS INTEGRATED CIRCUIT f juPD42S4260L, 424260L 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs with optional fast page mode

HD74LV1GT126A

Abstract: HD74LV1GT126ACME HD74LV1GT126AVSE PTSP0005ZC-A PUSN0005KA-A
Contextual Info: HD74LV1GT126A Bus Buffer Gate with 3–state Output / CMOS Logic Level Shifter REJ03D0124-0900 Rev.9.00 Mar 21, 2008 Description The HD74LV1GT126A has a bus buffer gate with 3–state output in a 5 pin package. Output is disabled when the associated output enable OE input is low. To ensure the high impedance state during power up or power down, OE

HD74LV1GT125ACME

Abstract: HD74LV1GT125A HD74LV1GT125AVSE PTSP0005ZC-A PUSN0005KA-A
Contextual Info: HD74LV1GT125A Bus Buffer Gate with 3–state Output / CMOS Logic Level Shifter REJ03D0123-0900 Rev.9.00 Mar 21, 2008 Description The HD74LV1GT125A has a bus buffer gate with 3–state output in a 5 pin package. Output is disabled when the associated output enable OE input is high. To ensure the high impedance state during power up or power down, OE

HD74LV126A

Abstract: HD74LV1G126A HD74LV1G126ACME HD74LV1G126AVSE PTSP0005ZC-A PUSN0005KA-A
Contextual Info: HD74LV1G126A Bus Buffer Gate with 3–state Output REJ03D0072-0700 Rev.7.00 Mar 21, 2008 Description The HD74LV1G126A has a bus buffer gate with 3–state output in a 5 pin package. Output is disabled when the associated output enable OE input is low. To ensure the high impedance state during power up or power down, OE

HD74LV1G125AVSE

Abstract: PTSP0005ZC-A PUSN0005KA-A HD74LV125A HD74LV1G125A HD74LV1G125ACME
Contextual Info: HD74LV1G125A Bus Buffer Gate with 3–state Output REJ03D0071-0700 Rev.7.00 Mar 21, 2008 Description The HD74LV1G125A has a bus buffer gate with 3–state output in a 5 pin package. Output is disabled when the associated output enable OE input is high. To ensure the high impedance state during power up or power down, OE

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5