TRA8 L Search Results
TRA8 L Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TC514400
Abstract: TCWP
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TC514400J/Z TC514400J/Z-80 TC514400J/Z--10 TC514400 TCWP | |
Contextual Info: NEC MOS INTEGRATED CIRCUIT juPD42S4400L, 424400L 3.3 V OPERATION 4 M BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /¿PD42S4400L, 424400L are 1 048 576 w ords by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption. |
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juPD42S4400L 424400L PD42S4400L, 424400L PD42S4400L 26-pin //PD42S4400L PD42S4400L cycles/128 | |
DML D01Contextual Info: HYUNDAI HY514810B Series 5 1 2 K x 8 - b it C M O S DRAM w ith W r ite -P e r - B II PRELIMINARY DESCRIPTION The HY51481 OB is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51481 OB utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating |
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HY514810B HY51481 1AC19-00-MAY94 HY514810BJC HY514810BUC HY514810BSUC HY514810BTC DML D01 | |
Contextual Info: ••HYUNDAI H Y 5 1 1 7 4 1 0 S e r ie s 4M X 4-bit C M O S DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced |
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HY5117410 1AD06-10-MAY94 HY5117410JC HY5117410UC HY5117410TC HY5117410LTC HY5117410RC | |
Contextual Info: MT4LC2M8E7 L 2 MEG X 8 DRAM M IC R O N 2 MEG x 8 DRAM DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH PIN ASSIGNMENT (Top View) • Industry-standard x8 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply |
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150mW 048-cycle 28-Pin | |
Contextual Info: “HYUNDAI HY51V4810B Series 5 1 2 K x 8 -b tt CM O S DRAM w it h W r it e - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide |
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HY51V4810B HY51V4810B 1AC20-00-MAY94 HY51V4810BJC HY51V4810BSUC HY51V4810BTC | |
Contextual Info: • TRAN ^ k 1004152 0007020 104 ■ CUBIT Device «g*, »* jiüüM R. > ,.M V. CellBus Bus Switch TXC-05801 DATA SHEET DESCRIPTION FEATURES CUBIT is a single-chip solution for implementing low-cost ATM multiplexing and switching systems, based on the CellBus bus architecture. Such systems |
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TXC-05801 37-line TXC-05801-MB | |
Contextual Info: C U B IT Device C eîîB us Switch TXC-05801 DATA SH EE T FEATURES DESCRIPTION • U TO PIA or A LI-25 physical-layer cell interface C U B IT is a single-chip solution fo r im plem enting low -cost ATM m ultiplexing and sw itching system s, based on the CellBus architecture. Such system s are |
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TXC-05801 LI-25 | |
7 pin ic cp43
Abstract: ALI-25 ALI-25C rh30100
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TXC-05802 16-Bit ALI-25 16BMODE, 32USER TXC-05802-MB 7 pin ic cp43 ALI-25C rh30100 | |
Contextual Info: CUBIT-3 Device CellBus Bus Switch TXC-05804 DATA SHEET DESCRIPTION FEATURES CUBIT®-Pro The CUBIT-3 is a single-chip VLSI solution for implementing low-cost ATM multiplexing and switching systems, based on the CellBus® architecture. Such systems are constructed from a number of CUBIT-3 devices, all |
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TXC-05804 TXC-05802B) TXC-05810) 8/16-bit) TXC-05804-MB | |
TXC-05804-MB
Abstract: sot marking code w17 W17 marking code sot 23
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TXC-05804 TXC-05802B) CUBIT-622 TXC-05805) TXC-05810) 8/16-bit) TXC-05804-MB sot marking code w17 W17 marking code sot 23 | |
A01H
Abstract: 9FF MARKING T-RA18 SA 6356
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TXC-05805 8/16-bit) TXC-05805-MB A01H 9FF MARKING T-RA18 SA 6356 | |
Contextual Info: CUBIT-622 Device DATA SHEET PRODUCT PREVIEW DESCRIPTION FEATURES The CUBIT-622 device is a single-chip solution for implementing low-cost ATM multiplexing and switching systems, based on the CellBus architecture. Such systems are built from a number of CUBIT-3, |
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TXC-05805 8/16-bit) TXC-05805-MB |