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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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TBAW56
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Toshiba Electronic Devices & Storage Corporation
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Switching Diode, 80 V, 0.215 A, SOT23 |
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HN1D05FE
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Toshiba Electronic Devices & Storage Corporation
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Switching Diode, 400 V, 0.1 A, ES6 |
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XPQR8308QB
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL |
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