TRANSCO Search Results

UFNF430

Abstract: diode ed 2437 UFNF432
Contextual Info: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.

74LS299 APPLICATIONS

Abstract: 74ls74 timing setup hold pin diagram and block diagram of 74ls74 ANSI32
Contextual Info: TMS320SA32 32 KBIT/S ADPCM TRANSCODER NOVEMBER 1986 N PACKAGE ANSI 32 kbit/s ADPCM Compatible TOP VIEW CCITT G.721 32 kbit/s ADPCM Compatible Half-Duplex Transcoder Operation Transmit/Receive Selection Option /t-Law/A-Law PCM Selection Option NC£ 1^ 4 0 □

ufn440

Abstract: UFN441
Contextual Info: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

2N6797

Contextual Info: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching

lts 542

Abstract: UFN540 FN640
Contextual Info: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

ufn330

Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching

OSM248-2

Abstract: 18PH 18ph diode sd301 022ph sd304 SD300 SD303 FT401
Contextual Info: PIN CONFIGURATION GENERAL FEATURES • • • • • • • Lower cross-modulation and wider dynamic range than bipolar or single gate FETs Reverse AGC capability Linear mixing capability Diode protected gates High forward transconductance - gfs = 10,000umhos

13700

Abstract: NJM13600D NJM13700M DIODE DATABOOK DMP16 NJM13600M NJM13700D
Contextual Info: NJM13600/13700 DUAL OPERATIONAL TRANSCONDUCTANCE AMPLIFIER • GENERAL DESCRIPTION The NJM13600/13700 consist of two current controlled trans conductance amplifiers each with differential inputs and a push pull output. The two amplifiers share common supplies but

Contextual Info: SFF15N80/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 15 AMPS 800 VOLTS 0.60 S N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Low RDS (on) and High Transconductance

Contextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

Contextual Info: 2SJ475-01 P-channel MOS-FET FAP-III Series -60V > Features - 0,06Ω 25A 50W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier

Contextual Info: 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

ncp1608b

Abstract: NCP1608 NCP1608BDR2G IC 1608B 1608B
Contextual Info: NCP1608 Critical Conduction Mode PFC Controller Utilizing a Transconductance Error Amplifier The NCP1608 is an active power factor correction PFC controller specifically designed for use as a pre−converter in ac−dc adapters, electronic ballasts, and other medium power off−line

MSM7581

Abstract: PAD10 PAD31 NC-641 M7581
Contextual Info: O K I Semiconductor MSM7581_ ITU-T G.721 4ch ADPCM TRANSCODER G E N E R A L D ESC R IP T IO N The MSM7581 is an A D PC M tran sc o d er w h ich is u se d b y th e n ew dig ital cordless system . It converts 64 k b p s voice PCM serial d a ta to 32 k b p s ITU-T G.721 A D PC M serial d ata, a n d vice

pcms

Abstract: aaf sod MSM6981-01RS MSM6981-01 567 tone decoder
Contextual Info: O K I Semiconductor MSM6981-01 32 kbps ADPCM TRANSCODER GENERAL DESCRIPTION The MSM6981-01 is for performing high-frequency compression to code an A /D converted audio-band PCM signal into an ADPCM signal with a transmission rate of 32 kbps/ or conversely

oms 450

Abstract: 2SK1086-M A2131 P channel MOSFET 10A schematic
Contextual Info: 2SK1086-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features 1High current k 5 *0 2 'Low on-resistance »No secondary breakdown 2 7±0 2 >l_ow driving power 1High forward Transconductance

operational transconductance amplifier

Abstract: HJM13600V NJM13600 NJM13700D NJM13700M
Contextual Info: DUAL OPERATIONAL TRANSCONDUCTANCE AMPLIFIER NJM13600/13700 T he NJM13600/13700 consist of two current controlled transconductance amplifiers each with differential inputs and a push pull output. T he two amplifiers share com m on supplies but otherw ise operate independently. Linearizing diodes are

DTMF Tone Decoder

Abstract: TSOP32 pad DDS1703 MSM7570L-01 MSM7570L-02
Contextual Info: O K I Semiconductor M SM 7570L-01/02 Multi-Function ADPCM CODEC G E N E R A L DESCRIPTION The M SM 7570L-01 /0 2 , developed for advanced digital cordless telephone system s, are single channel A D PC M CO D EC ICs w hich perform m utual transcoding betw een the analog v oiceband

opa1013 equivalent

Abstract: AGC OPA660 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 CCII APPLICATION 0525P
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

Contextual Info: User's Guide SBOU035A – July 2005 – Revised February 2006 DEM-OTA-SO-1A Demonstration Fixture 1 Description The DEM-OTA-SO-1A demonstration fixture is a generic, unpopulated printed circuit board PCB for single operational transconductance amplifiers in SO-8 packages. Figure 1 shows the package pinout for

F312

Abstract: f313 ufnf310
Contextual Info: POWER MOSFET TRANSISTORS ¡fF^ î? 400 Volt, 3.6 Ohm UFNF312 UFNF313 FEATURES • Fast Switching • Low Drive Current DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Ros<om and a high transconductance.

ufnf122

Abstract: ufnf120 UFNF123
Contextual Info: POWER MOSFET TRANSISTORS y 100 UFNF122 UFNF123 Volt, 0 .3 0 Ohm N-Channel FEATURES DESCRIPTION • • • • • The U nitrode power MOSFET design u tilizes the m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.

UFND1Z0

Contextual Info: UFND1Z0 UFND1Z3 POWER MOSFET TRANSISTORS 100 Volt, 2.4 Ohm N-Channel FEATURES DESCRIPTION • • • • • The U nitrode pow er M OSFET design utilizes th e m ost advan ced technology available. This efficien t design achieves a very low Roaom and a high transcon ductance.