TRANSCONDUCTANCE Search Results

UFNF430

Abstract: diode ed 2437 UFNF432
Contextual Info: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.

ufn440

Abstract: UFN441
Contextual Info: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

2N6797

Contextual Info: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching

lts 542

Abstract: UFN540 FN640
Contextual Info: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

ufn330

Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching

OSM248-2

Abstract: 18PH 18ph diode sd301 022ph sd304 SD300 SD303 FT401
Contextual Info: PIN CONFIGURATION GENERAL FEATURES • • • • • • • Lower cross-modulation and wider dynamic range than bipolar or single gate FETs Reverse AGC capability Linear mixing capability Diode protected gates High forward transconductance - gfs = 10,000umhos

13700

Abstract: NJM13600D NJM13700M DIODE DATABOOK DMP16 NJM13600M NJM13700D
Contextual Info: NJM13600/13700 DUAL OPERATIONAL TRANSCONDUCTANCE AMPLIFIER • GENERAL DESCRIPTION The NJM13600/13700 consist of two current controlled trans conductance amplifiers each with differential inputs and a push pull output. The two amplifiers share common supplies but

Contextual Info: SFF15N80/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 15 AMPS 800 VOLTS 0.60 S N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Low RDS (on) and High Transconductance

Contextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

Contextual Info: 2SJ475-01 P-channel MOS-FET FAP-III Series -60V > Features - 0,06Ω 25A 50W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier

Contextual Info: 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

ncp1608b

Abstract: NCP1608 NCP1608BDR2G IC 1608B 1608B
Contextual Info: NCP1608 Critical Conduction Mode PFC Controller Utilizing a Transconductance Error Amplifier The NCP1608 is an active power factor correction PFC controller specifically designed for use as a pre−converter in ac−dc adapters, electronic ballasts, and other medium power off−line

oms 450

Abstract: 2SK1086-M A2131 P channel MOSFET 10A schematic
Contextual Info: 2SK1086-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features 1High current k 5 *0 2 'Low on-resistance »No secondary breakdown 2 7±0 2 >l_ow driving power 1High forward Transconductance

opa1013 equivalent

Abstract: AGC OPA660 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 CCII APPLICATION 0525P
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

Contextual Info: User's Guide SBOU035A – July 2005 – Revised February 2006 DEM-OTA-SO-1A Demonstration Fixture 1 Description The DEM-OTA-SO-1A demonstration fixture is a generic, unpopulated printed circuit board PCB for single operational transconductance amplifiers in SO-8 packages. Figure 1 shows the package pinout for

F312

Abstract: f313 ufnf310
Contextual Info: POWER MOSFET TRANSISTORS ¡fF^ î? 400 Volt, 3.6 Ohm UFNF312 UFNF313 FEATURES • Fast Switching • Low Drive Current DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Ros<om and a high transconductance.

ufnf122

Abstract: ufnf120 UFNF123
Contextual Info: POWER MOSFET TRANSISTORS y 100 UFNF122 UFNF123 Volt, 0 .3 0 Ohm N-Channel FEATURES DESCRIPTION • • • • • The U nitrode power MOSFET design u tilizes the m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.

2N5396

Abstract: 2n5397
Contextual Info: 9-97 B 20 2N5397, 2N5398 N -C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N SIST O R LOW NOISE HIGH POWER GAIN HIGH TRANSCONDUCTANCE MIXERS OSCILLATORS VHF AMPLIFIERS Absolute maximum ratings at T* * 25"C Reverse Gate Source & Reverse Gate Drain Voltage

6BH6

Abstract: ET-T525B internal diagram of 7400 IC
Contextual Info: 6BH6 ET-T525B Pa g e 1 6BH6 4.57 PENTODE TUBES DESCRIPTION AND RATING The 6BH6 is a miniature sharp-cutoff pentode primarily designed for use as a high-gain radio-frequency or intermediate-frequency amplifier. Features include low grid-plate capacitance, relatively high transconductance, and low

6am4

Abstract: 6am4 tube t806
Contextual Info: 6AM4 6AM4 ET-T806A Page 1 12-56 TRIODE TUBES FOR UHF MIXER AND AMPLIFIER APPLICATIONS DESCRIPTION AND RATING The 6AM4 is a miniature high-mu triode designed for use as a grounded-grid mixer or amplifier in television receivers that operate in the ultra-highfrequency region. Its sharp-cutoff and high transconductance, coupled with

JAN 7289

Abstract: A00025 general electric 561R 7289 triode 1025
Contextual Info: 7289 7289 Page 1 3-63 PLANAR TRIODE DESCRIPTION AND RATING' FOR G R O UN DED -GRID OSCILLATOR, AM PLIFIER, AN D FREQUENCY M ULTIPLIER SERVICE M etal and Ceramic Pulse Rated High Transconductance Shock Resistant 100 W atts Plate Dissipation The 7289 is a metal-and-ceramic, high-mu triode designed for use as a

10-PLATE

Abstract: T062 general electric
Contextual Info: e l e c t r o n — PRODUCT INFORMATION- !* : Page 1 1 1 1 ^ ix A c r in x TUBES Compactron Triode-Pentode The 6AG9 is a compactron containing a sharp-cutoff, high-transconductance, frame-grid pentode and a triode. The pentode is intended for video amplifier service and the triode

EF183

Abstract: VS20 RG-215
Contextual Info: EF183 I.F. PENTODE Pentode with variable transconductance intended for use a s I . F . am plifier in television receivers. QUICK REFERENCE DATA Anode current T ransconductance Internal resistance 12 mA 12.5 mA/V 500 kfi la S Ri HEATING: Indirect by A .C . or D .C .; parallel or series supply