TRANSIMPEDANCE 10 M Search Results

Contextual Info: ODHKGA4121D-05 Electronic Components KGA4121D Issue Date:May. 20, 2003 Preliminary 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10 Gbps transimpedance amplifier is fabricated 0.1 µm gate length P-HEMTs for high-speed optical communication. The IC has a large transimpedance, high sensitivity performance.

Contextual Info: ODHKGA4121D-03 Electronic Components KGA4121D Issue Date:Jun 27, 2003 10 Gbps Transimpedance Amplifier IC DESCRIPTION Oki's 10 Gbps transimpedance amplifier is fabricated 0.1µm gate length P-HEMTs for high-speed optical communication. The IC has a large transimpedance, high sensitivity and a wide dynamic range.

Philips 787 receiver

Abstract: CGY2110CU OC192 STM-64 philips receiver 787
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2110CU 10 Gbits/s transimpedance amplifier Preliminary specification File under Integrated Circuits, IC19 2001 Dec 07 Philips Semiconductors Preliminary specification 10 Gbits/s transimpedance amplifier CGY2110CU FEATURES

t85 diode

Abstract: photodiode pin alpha RF capacitor 1pF
Contextual Info: HMC799LP3E v01.1009 12 DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER Typical Applications Features The HMC799LP3E is ideal for: 10 kOhm Transimpedance • Laser Sensor Very Low Noise: 150nA Input RMS Noise over 700 MHz Bandwidth • FDDI Receiver 700 MHz Analog Bandwidth

OMMIC

Abstract: CGY2110 CGY2110UH OC192 STM-64 LB/LM358 RF receiver module
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2110 /C1 10 Gb/s Transimpedance Amplifier Preliminary Specification Supersedes data of Dec. 1998 File under Integrated Circuits, IC19 2000 Feb 11 Philips Semiconductors Preliminary Specification 10 Gb/s Transimpedance Amplifier

equivalent ZO 607

Abstract: ZO 607 MA zo 607 transistor zo 607 STM-64 TTIA0110G TTIA0110G51 transimpedance amplifier 7.5 GHz lightwave receiver stm-64
Contextual Info: Advance Data Sheet March 2001 TTIA0110G 10 Gbits/s Transimpedance Amplifier Features • 10 GHz bandwidth ■ 1 kΩ transimpedance single-ended ■ Complementary 50 Ω outputs can be ac or dc coupled ■ Power dissipation 0.8 W ■ Die size: 1.600 mm x 1.225 mm

ADN2882

Abstract: ADN2882XCHIPS-WP OC48 5PIN TO56 package
Contextual Info: 4.25 Gbps 3.3V Low Noise Transimpedance Amplifier ADN2882 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Technology: high performance SiGe Bandwidth: 3.2 GHz minimum Input noise current density: 10 pA√Hz Optical sensitivity: −22 dBm Differential transimpedance: 4000 V/A

TTIA0110G

Abstract: AGERE transimpedance amplifier 10 GHz
Contextual Info: Product Brief June 2001 TTIA0110G 10 Gbits/s Transimpedance Amplifier Features • 10 GHz bandwidth ■ 1 kΩ transimpedance single-ended ■ Complementary 50 Ω outputs can be ac or dc coupled ■ Equivalent input noise current 1.5 µArms ■ Group delay ±15 ps

KGA4183

Contextual Info: ODHKGA4183-01 Electronic Components KGA4183 Issue Date: Mar. 9, 2007 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10Gbps transimpedance amplifier is fabricated 0.1 µm gate length P-HEMTs for high-speed optical communication. The IC has a good linear performance.

Contextual Info: ONET9901TA 10.7ĆGbps TRANSIMPEDANCE AMPLIFIER WITH RSSI SLLS615 − APRIL 2004 features D D D D D D D D D applications D SONET OC−192 D 10-Gbps Ethernet Receivers D 10-Gbps Fibre Channel Receivers 11.2-GHz Bandwidth 5.5-kΩ Differential Transimpedance

Contextual Info: ONET2511TA 2.5 GBPS TRANSIMPEDANCE AMPLIFIER WITH RSSI www.ti.com SLLS622 – SEPTEMBER 2004 FEATURES • • • • • • • • • DESCRIPTION 2.5 GHz Bandwidth 4.0 kΩ Differential Transimpedance 10 pA/√Hz Typical Input Referred Noise 2 mA Maximum Input Current

Contextual Info: ONET2511TA 2.5 GBPS TRANSIMPEDANCE AMPLIFIER WITH RSSI www.ti.com SLLS622 – SEPTEMBER 2004 FEATURES • • • • • • • • • DESCRIPTION 2.5 GHz Bandwidth 4.0 kΩ Differential Transimpedance 10 pA/√Hz Typical Input Referred Noise 2 mA Maximum Input Current

TIA bonding

Abstract: mmic s5 OMMIC STM-16 CGY2102
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2102UH 2.5 Gb/s Transimpedance Amplifier Objective Specification Supersedes data of Sept. 01 2000 File under Integrated Circuits, IC19 2001 Jan 10 Philips Semiconductors Objective Specification 2.5 Gb/s Transimpedance Amplifier

KGA4193

Contextual Info: October 1, 2008 Electronic Components Advanced Information KGA4193 ODHKGA4193-02 10 Gbps Transimpedance Amplifier IC with build in AGC GENERAL DESCRIPTION Oki’s 10Gbps transimpedance amplifier is fabricated 0.1 m gate length P-HEMTs for high-speed optical

Contextual Info: ONET8531T www.ti.com SLLS891A – FEBRUARY 2008 – REVISED JANUARY 2010 11.3 Gbps Limiting Transimpedance Amplifier With RSSI Check for Samples: ONET8531T FEATURES 1 • • • • • • • • 10 GHz Bandwidth 4.5 kΩ Differential Small Signal Transimpedance

KGA4163

Contextual Info: October 1, 2008 Electronic Components KGA4163 ODHKGA4163-02 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10Gbps transimpedance amplifier is fabricated 0.1 m gate length P-HEMTs for high-speed optical communication. The IC has high sensitivity and overload performance.

KGA4183

Contextual Info: October 1, 2008 Electronic Components KGA4183 ODHKGA4183-02 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10Gbps transimpedance amplifier is fabricated 0.1 m gate length P-HEMTs for high-speed optical communication. The IC has a good linear performance.

PRBS31

Abstract: ONET8531T ONET8531TY ONET8531TYS ONET8531TYS9 03 TI APD
Contextual Info: ONET8531T www.ti.com SLLS891A – FEBRUARY 2008 – REVISED JANUARY 2010 11.3 Gbps Limiting Transimpedance Amplifier With RSSI Check for Samples: ONET8531T FEATURES 1 • • • • • • • • 10 GHz Bandwidth 4.5 kΩ Differential Small Signal Transimpedance

ae89

Abstract: AE89-1 84-0283 TB-14 10.5 GHz phase detector
Contextual Info: Advanced Information Data Sheet AE89-1 TB14 10 Gb/s Transimpedance Amplifier Features General description Operates at OC-192/STM-64 data rates up to 10.7 Gb/s NRZ. The Nortel Networks AE89-1 (TB14) 10 Gb/s Transimpedance Amplifier is used in conjunction with a photodetector to convert an optical NRZ signal

SFf-8431

Contextual Info: ONET8531T www.ti.com SLLS891 – FEBRUARY 2008 11.3 Gbps Limiting Transimpedance Amplifier With RSSI FEATURES APPLICATIONS • • • • • • • • 1 • • • • • • • • 10 GHz Bandwidth 4.5 kΩ Differential Small Signal Transimpedance

Contextual Info: ODHKGA4153-02 Electronic Components KGA4153 Issue Date: Nov. 14, 2005 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10Gbps transimpedance amplifier is fabricated 0.1 m gate length P-HEMTs for high-speed optical communication. The IC has high sensitivity and overload performance.

TB16

Abstract: AE99-2 00FF
Contextual Info: Advanced Information Data Sheet AE99-2 TB16 10 Gb/s Transimpedance Amplifier Features General description Operates at OC-192/STM-64 data rates up to 10.6 Gb/s NRZ and down to 50 Mb/s rates. The Nortel Networks AE99-2 (TB16) is a monolithic, silicon bipolar transimpedance amplifier, providing wideband,

KGA4163

Contextual Info: ODHKGA4163-01 Electronic Components KGA4163 Issue Date:Nov. 14, 2005 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10Gbps transimpedance amplifier is fabricated 0.1 m gate length P-HEMTs for high-speed optical communication. The IC has high sensitivity and overload performance.

Contextual Info: ONET8531T www.ti.com SLLS891 – FEBRUARY 2008 11.3 Gbps Limiting Transimpedance Amplifier With RSSI FEATURES APPLICATIONS • • • • • • • • 1 • • • • • • • • 10 GHz Bandwidth 4.5 kΩ Differential Small Signal Transimpedance