TRANSISTOR* IGBT 200A 300 V Search Results

**TRANSISTOR* IGBT 200A 300 V Result Highlights (5)**

Part	Manufacturer	Description
GT30J110SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
GT30N135SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1350 V, 30 A, Built-in Diodes, TO-247
GT30J65MRB	Toshiba Electronic Devices & Storage Corporation	IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N)
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L

**TRANSISTOR* IGBT 200A 300 V Datasheets Context Search**

Catalog Datasheet	Type	Document Tags	PDF
DIM200PLM33-A000 Contextual Info: DIM200PLM33-A000 DIM200PLM33-A000 IGBT Chopper Module Preliminary Information Replaces issue April 2003, version DS5597-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates	Original	DIM200PLM33-A000 DS5597-1 DS5597-2 DIM200PLM33-A000	PDF
eupec igbt Abstract: IGBT module FZ 600kW Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 200 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom	Original		PDF
DIM200WLS12-A000 Abstract: bi-directional IGBT Contextual Info: DIM200WLS12-A000 DIM200WLS12-A000 IGBT Chopper Module - Lower Arm Control Replaces February 2004 version, issue FDS5697-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5697-3.0 June 2004 KEY PARAMETERS	Original	DIM200WLS12-A000 FDS5697-2 FDS5697-3 DIM200WLS12-A000 bi-directional IGBT	PDF
eupec igbt Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FD 200 R 65 KF1-K Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom	Original		PDF
DIM200WKS12-A000 Contextual Info: DIM200WKS12-A000 DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control Replaces February 2004 version, issue PDS5969-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5969-3.0 June 2004 KEY PARAMETERS	Original	DIM200WKS12-A000 PDS5969-2 DS5969-3 DIM200WKS12-A000	PDF
Contextual Info: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800	Original	T0340VB45G T0340VB45G	PDF
DIM200WKS17-A000 Contextual Info: DIM200WKS17-A000 DIM200WKS17-A000 IGBT Chopper Module - Upper Arm Control FDS5699-1.1 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK)	Original	DIM200WKS17-A000 FDS5699-1 DIM200WKS17-A000	PDF
DIM200WHS12-E000 Contextual Info: DIM200WHS12-E000 DIM200WHS12-E000 Half Bridge IGBT Module PDS5684-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)	Original	DIM200WHS12-E000 PDS5684-1 DIM200WHS12-E000	PDF
Contextual Info: WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.	Original	T0360NB25A T0360NB25A	PDF
DIM200WLS17-A000 Abstract: 12v AC to DC CIRCUIT DIAGRAM transistor 9009 Contextual Info: DIM200WLS17-A000 Chopper Module - Lower Arm Control DS5698-1.2 July 2007 LN25358 FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand Lead Free construction KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) 1700V	Original	DIM200WLS17-A000 DS5698-1 LN25358) DIM200WLS17-A000 12v AC to DC CIRCUIT DIAGRAM transistor 9009	PDF
igbt control servo motor Contextual Info: QIR0620001 Powerex Inc., 173 Pavilion Lane, Youngwood, PA 15697 724 925-7272 www.pwrx.com IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Description: Powerex IGBT modules are designed for use in switching applications. Each Module consists of one IGBT	Original	QIR0620001 Amperes/600 2025kHz) igbt control servo motor	PDF
DIM200PHM33-F000 Contextual Info: DIM200PHM33-F000 DIM200PHM33-F000 Half Bridge IGBT Module Replaces June 2003 version, issue PDS5606-2.1 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability	Original	DIM200PHM33-F000 PDS5606-2 PDS5606-3 DIM200PHM33-F000	PDF
FD200R12KE3 Abstract: MJ 800 Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FD200R12KE3 Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES 1200	Original	FD200R12KE3 FD200R12KE3 MJ 800	PDF
DF200R12KE3 Abstract: DIODE 200A 600V Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules DF200R12KE3 Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES 1200	Original	DF200R12KE3 DF200R12KE3 DIODE 200A 600V	PDF

340G Abstract: LM 949 DIM200WHS17-A000 Contextual Info: DIM200WHS17-A000 DIM200WHS17-A000 Half Bridge IGBT Module Replaces issue December 2003, version FDS5673-2.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate FDS5673-3.0 January 2004 KEY PARAMETERS VCES	Original	DIM200WHS17-A000 FDS5673-2 FDS5673-3 DIM200WHS17-A000 340G LM 949	PDF
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage	Original		PDF
1000 watts ups circuit diagram with detail Abstract: MG200J6ES61 Contextual Info: MG200J6ES61 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six IGBTMOD Compact IGBT Series Module 200 Amperes/600 Volts A D L J K H M U G N P DETAIL "A" C B U V F E W H Q N Q T S R P R V P W X CN-1 CN-2 P CN-1:7 CN-1:6	Original	MG200J6ES61 Amperes/600 1000 watts ups circuit diagram with detail MG200J6ES61	PDF
DIM200PHM33-A000 Contextual Info: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Preliminary Information Replaces August 2001, version DS5464-3.0 FEATURES DS5464-4.0 October 2001 KEY PARAMETERS • 10µs Short Circuit Withstand VCES ■ High Thermal Cycling Capability VCE sat (typ)	Original	DIM200PHM33-A000 DS5464-3 DS5464-4 DIM200PHM33-A000	PDF
DIM200MBS12-A000 Abstract: DS55452 Contextual Info: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Preliminary Information Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002	Original	DIM200MBS12-A000 DS5543-1 DS5545-2 DIM200MBS12-A000 DS55452	PDF
was dual transistor Abstract: DIM200MBS12-A000 Contextual Info: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002 KEY PARAMETERS VDRM	Original	DIM200MBS12-A000 DS5543-1 DS5545-2 DIM200MBS12-A000 was dual transistor	PDF
BSM200GA170DLC Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GA 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom	Original		PDF
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage	Original		PDF
BSM200GB170DL Abstract: BSM200GB170DLC Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom	Original		PDF
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage	Original		PDF

TRANSISTOR* IGBT 200A 300 V Search Results

TRANSISTOR* IGBT 200A 300 V Result Highlights (5)

TRANSISTOR* IGBT 200A 300 V Datasheets Context Search

DIM200PLM33-A000

eupec igbt

DIM200WLS12-A000

eupec igbt

DIM200WKS12-A000

DIM200WKS17-A000

DIM200WHS12-E000

DIM200WLS17-A000

igbt control servo motor

DIM200PHM33-F000

FD200R12KE3

DF200R12KE3

340G

1000 watts ups circuit diagram with detail

DIM200PHM33-A000

DIM200MBS12-A000

was dual transistor

BSM200GA170DLC

BSM200GB170DL

**TRANSISTOR* IGBT 200A 300 V Result Highlights (5)**

**TRANSISTOR* IGBT 200A 300 V Datasheets Context Search**