TRANSISTOR, IC 1A DATASHEET, NPN Search Results

Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)

Contextual Info: 2N3019HR Hi-Rel NPN bipolar transistor 80 V, 1 A Datasheet — production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified

complementary npn-pnp

Abstract: SO-8 V 052 S01DTP06 STS01DTP06 STS01DTP06T4 STS01DTP so-8 marking STMicroelectronics npn-pnp dual
Contextual Info: STS01DTP06 DUAL COMPLEMENTARY NPN-PNP BIPOLAR TRANSISTOR Preliminary Datasheet Figure 1: Package Table 1: General Features n n n n VCE sat hFE IC 0.35 V > 100 1A HIGH GAIN LOW VCE(sat) SIMPLIFIED CIRCUIT DESIGN REDUCED COMPONENT COUNT APPLICATION n PUSH-PULL OR TOTEM POLE CONFIGURATION

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages

5201/002/05R

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB • Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram

JANSR2N3700UB

Abstract: ESCC
Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB • Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 LCC-3UB Pin 4 in LCC-3UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages

transistor crossreference

Abstract: transistor cross reference TIP47TU TIP50TU crossreference transistor TIP50 application notes transistor 2203 transistor Ic 1A NPN NPN Transistor TO220 vcc 150V
Contextual Info: TIP47/48/49/50 TIP47/48/49/50 High Voltage and Switching Applications • High Sustaining Voltage : VCEO sus = 250 - 400V • 1A Rated Collector Current NPN Silicon Transistor TO-220 1 Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter

J13007-2

Abstract: J13007 J13007-1 j13007-1 fairchild transistor J13007-1 J-13007-2 transistor j13007 fjp13007tu F J13007-2 FJP13007H1TU
Contextual Info: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted

J13007-2

Abstract: j13007 J-13007-2 transistor j13007 FJPF13007 F J13007-2 transistor J13007-1
Contextual Info: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter TC = 25°C unless otherwise noted

t6790

Abstract: ZDT6790 zetex t6790 100MA 45 V NPN ic1a FZT690 DSA003726
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6790 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6790 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 45 -50

t6753

Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage

FJPF13007

Abstract: electronic ballast with npn transistor
Contextual Info: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter TC = 25°C unless otherwise noted

NPN Transistor 1.5A 300V

Abstract: QS 100 NPN Transistor 200H NPN Transistor VCEO 1000V
Contextual Info: KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • • D-PAK High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

1A 300V TRANSISTOR

Contextual Info: KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • • D-PAK High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter TC = 25°C unless otherwise noted

FJP13007

Abstract: electronic ballast with npn transistor
Contextual Info: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted

Contextual Info: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

KST3904MTF

Contextual Info: KST3904 KST3904 General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO Collector-Emitter Voltage

trace code TO-220

Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
Contextual Info: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram

Contextual Info: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

marking code transistor list

Abstract: FJC690 FJC790
Contextual Info: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings