TRANSISTOR - NP 100 Search Results

marking NP

Abstract: 2SC3837K 2SC4082 2SC4725 2SC5661 SC-75A T106 T146
Contextual Info: 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor 20V, 50mA, 1.5GHz 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K zExternal dimensions (Unit : mm) 1.2 0.8 1.2 0.32 0.2 (3) 0.13 0to0.1 0.5 0.22 (1) Marking NP AC∗ SMT3 NP AC∗

PN2222 EQUIVALENT

Abstract: Transistor
Contextual Info: SAMSUNG SEM ICONDUCTOR INC MPS2222 LME 0 QÛ?3 0 b D M J jx NPÑ EPITAXIAL SIUCOÑ TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-EmlttarVoltage: Vc£O=30V • Collector Dlsalpatlon: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=250C) Characteristic Collector-Base \foltage

2SA1882

Abstract: 2SC4984 A1882 5SA18
Contextual Info: Ordering number: EN4633 2SA1882/2SC4984 No.4633 PNP/NPÑ Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications I A pplications • Low-frequency power amp applications. • Medium-speed switching. • Small-sized motor drivers.

2sd734

Abstract: 2SB698 512F
Contextual Info: Ordering number:512F PNP/NPN Epitaxial Planar Silicon Transistor 2SB698/2SD734 1W AF Output, Electronic Governor, DC-DC Converter Applications Package Dimensions unit:mm 2003A [2SB698/2SD734] JEDEC : TO-92 EIAJ : SC-43 SANYO : NP : 2SB698 for audio 1W output.

2SC2300

Abstract: 2SC3000
Contextual Info: Ordering number:EN866C NPN Epitaxial Planar Silicon Transistor 2SC3000 HF Amplifier Applications Features Package Dimensions • FBET series. · High fT and small Cre. unit:mm 2003A [2SC3000] B : Base C : Collector E : Emitter SANYO : NP JEDEC : TO-92 EIAJ

Contextual Info: Ordering number : EN1334F 2SC3332 Bipolar Transistor 160V, 0.7A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide SOA and highly resistant to breakdown Adoption of MBIT process Specifications

Contextual Info: Ordering number : EN1334E 2SC3332 Bipolar Transistor 180V, 160A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown Adoption of MBIT process Specifications

TRANSISTOR D400

Abstract: D400 transistor d400 e nt transistor d400 transistor d400 t f C200-600 s9014 equivalent transistor TO-92 S9015 transistor S9014
Contextual Info: S9014 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion S witching Application TO- 92 Collector Curre nt Ic=100mA Collector P owe r Dissipa tion P c=450mW Comple men tary to S9015 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value

JE205

Abstract: MJE105 k 351 transistor TO-225AB JE-20 to225ab MJE205
Contextual Info: MOTORO LA SC XSTRS/R F 12E D I b3L>7554 0005305 3 | r-3 3 -u MOTOROLA SEMICONDUCTOR MJE105 TECHNICAL DATA MI D 5 AM PERE 1>NP SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON output device in complementary audio amplifiers . w p 6 ^ $ 3 p t t s music power per channel.

D1835 transistor

Abstract: TRANSISTOR D1835
Contextual Info: Ordering number : EN2158B 2SD1835 Bipolar Transistor 50V, 2A, Low VCE sat , NPN Single NP http://onsemi.com Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage

TRANSISTOR D400

Abstract: D400 transistor transistor C200 d400 d400 e nt transistor d400 f S9015 s9014 equivalent s9015 equivalent
Contextual Info: S9015 P NP EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion S witching Applica tion TO- 92 Collector Curre nt Ic=-100mA Collector P owe r Dissipa tion P c=450mW Comple me ntary to S9014 ABS OLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol

2N696

Contextual Info: 2N696 NPN Transistor 3.50 Transistors Bipolar Silicon NPN Low-Power Transistors Am. Page 1 of 1 Enter Your Part # Home Part Number: 2N696 Online Store 2N696 Diodes NP N T rans is to r Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

IC555

Abstract: IC-555 2SC4172 NP254
Contextual Info: Ordering num ber: EN 2546A I _ 2 S C 4 1 7 2 Np, 254.QA NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features . High breakdown voltage VCb q ^800V . Fast switching speed . Wide ASO . Suitable for sets whose height is restricted

GMA14

Contextual Info: ISSUED DATE :2001/10/04 REVISED DATE :2006/05/10C G M A1 4 NP N E PITAX I AL PLANAR T RANSI STOR Description The GMA14 is a Darlington amplifier transistor designed for applications requiring extremely high current gain. Package Dimensions SOT-89 Millimeter

Contextual Info: WEITRON KTC1027 NP N Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) value Units VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO Parameter Symbol Collector-Base Voltage

transistor bc 100

Abstract: BC215 BC 215
Contextual Info: BC 215 B NP SILICON TRANSISTOR, EP ITAXIAL PLANAR RANSISTOR PNP SILIC IU M , PLAN A R E P IT A X IA L ha PNP planar épitaxial BC 215 B is intended ar général purpose ? transistor PNP planar BC 215 B est destiné aux •âges généraux CD >° -5 0 V —500 mA

GMBTA13

Contextual Info: CORPORATION G M BTA1 3 ISSUED DATE :2003/07/15 REVISED DATE :2006/05/09B NP N E PITAX I AL S ILI CO N T RANSI STOR Description The GMBTA13 is designed for Darlington Amplifier Transistor. Features *High D.C. Current Gain *Collector-Emitter Voltage VCES=30V

GMBTA14

Contextual Info: CORPORATION G M BTA1 4 ISSUED DATE :2002/02/11 REVISED DATE :2006/05/09B NP N E PITAX I AL S ILI CO N T RANSI STOR Description The GMBTA14 is designed for Darlington Amplifier Transistor. Features *High D.C. Current Gain *Collector-Emitter Voltage VCES=30V

2SA1080

Contextual Info: cP January 1990 Edition 1.1 • FUJITSU P R O D U C T P R O F IL E - 2SA1080 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S A 1 0 8 0 is a silicon P NP M .C .-H ea d a m p lifie r use transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor {R E T } technology. R E T devices are

BC347

Contextual Info: SynSEM i T O -92 Plastic Encapsulate Transistors 5YN5EMI SEM ICONDUCTOR BC347 FEATURE TRANSISTOR NP N TO — 92 S oo^ Power dissipation PCM : 1.EMITTER 0.3 W (Tamb=25 °C) Collector current ICM 0. 1 A 2. BASE Collector base voltage 3. COLLECTOR V(b r )cbo

transistor 115

Abstract: 2N5879
Contextual Info: 2N5879 60 V - Complementary PNP Selicon High-power Transistor 1.15. 1 of 1 Home Part Number: 2N5879 Online Store 2N5879 Diodes 6 0 V - C o m plem e ntary P NP Selic o n High- po w er Tra ns is to r

3N74

Contextual Info: , v»' i ; t ’ . '"•".'Vi' "' '^’■ ’'■fo«3*•./<,.'■«'<,’».i»'*'*•ïf , - 1 • -''.* =i• : T i '- - À i - i , - ‘' . O » \ i o NP N SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR • • • • _ LOW LEAKAGE LOW Celì

s8050 d h

Abstract: TIC 160 D S8550 equivalent S8050 s8550 d h S8050 equivalent transistor TO-92 S8050 transistor s8050 c S8050 TRANSISTOR transistor s8050
Contextual Info: S8550 P NP EP ITAXIAL S ILICON TRANSISTOR High Current Application High Collector curre nt Ic= -700mA TO- 92 High Collector P owe r Dissipa tion P c=625mW Comple me ntary to S8050 ABS OLUTE MAXIMUM RATINGS Ta =25 S ymbol Value Unit Collector-Ba s e Volta ge

2N1652

Abstract: 2N1653 MIL-STD-780 2N1651 Germanium power
Contextual Info: MIL-S-19500/219A EL a annrr ioaq û A r UlU itruu jTTn’n ner'nrw^u OU MIL-S-19500/219(SigC) 21 NOVEMBER 1961 SPECIFICATION TRANSISTOR, PNP, GERMANIUM, POWER, SWITCHING TYPES 2N1651, 2N1Ö52, 2N1653 QOW m np lu î.î Scope. This spécification covers the de­