TRANSISTOR 0879 Search Results

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

VARISTOR k275

Abstract: K95 varistor S20 K275 varistor varistor s20 k275 "Surge Arresters" pspice siemens automotive relay dc 12v S20K275 sm 323 module Siemens varistor s20k275 k275 varistor
Contextual Info: 3 Application and design examples 3.1 Switching off inductive loads The discharge of an inductor produces high voltages that endanger both the contact breaker switching transistor and the like and the inductor itself. According to equation 16 the energy stored

MRF172

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF172 The RF MOSFET Line 80 W 2 .0 - 2 0 0 M Hz N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR N-CHANNEL MOS BROADBAND RF POWER . d e s ig n e d p rim a r ily fo r w id e b a n d la rg e - s ig n a l o u tp u t a n d d riv e r

Silectron core

Abstract: TWC-500 permalloy 80 2605SC ring core permalloy bh curve supermalloy bh curve MAGNESIL - N Transformer and Inductor Design Handbook, orthonol ring core permalloy 80
Contextual Info: TAPE WOUND CORES Division of Spang & Company DESIGN MANUAL TWC-500 ABOUT MAGNETICS Since 1949 Magnetics, a division of Spang & Company, has been a leading world supplier of precision, high permeability magnetic components and materials to the electronics industry. Applications for

IL6083

Abstract: IL6083N VT100 il6083 APPLICATION
Contextual Info: TECHNICAL DATA PWM Power Control IC with Interference Suppression IL6083 Description The designed IC is based on bipolar technology for the control of an N-channel power MOSFET used as a high-side switch. The IC is ideal for use in brightness control systems

kkz 12

Abstract: transistor dv4
Contextual Info: Temic U6083B Se m i co n ü u c tors PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for use in the brightness

diagram for test ic 8873

Abstract: T100 U6083B transistor 81 110 w a4
Contextual Info: U6083B TELEFUNKEN Semiconductors PWM Power Control with Interference Suppression Description U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a high side switch. The IC is ideal for the use in the brightness control dimming of lamps e.g., in dashboard

U6083B

Abstract: T100 VT100 transistor 81 110 w a4 VTT-100
Contextual Info: U6083B PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for use in the brightness control dimming of lamps e.g., in dashboard

U6083B

Abstract: T100 VT100
Contextual Info: U6083B PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a high side switch. The IC is ideal for use in the brightness control dimming of lamps e.g., in dashboard applications.

Contextual Info: Tem ic U6083B S e m i c o n d u c t o r s PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for use in the brightness

Contextual Info: Tem ic U6083B S e m i c o n d u c t o r s PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for use in the brightness

VS280

Contextual Info: U6083B PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for use in the brightness control dimming of lamps e.g., in dashboard

U6083B

Abstract: vtl series T100 VT100
Contextual Info: U6083B PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for use in the brightness control dimming of lamps e.g., in dashboard

U6083B

Abstract: transistor 81 110 w a4
Contextual Info: Tem ic U6083B S e m i c o n d u c t o r s PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a high side switch. The IC is ideal for use in the brightness con­

Contextual Info: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection Against Short-circuit, Load Dump Overvoltage and Reverse VS Duty Cycle 18 to 100% Continuously Internally Reduced Pulse Slope of Lamp's Voltage Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1

exkurs

Abstract: MTBF LM317 russland elektronische bauelemente ac elektronische halbleiter gmbh nf schaltungen Ringkerntrafo LM337 LM317 TRANSISTOR KATALOG LM317 quarz
Contextual Info: exkuRS Das PRODUKTSPECIAL der RS Components GmbH SPANNUNGSVERSORGUNG CE-Kennzeichnung Ungestörte Spannungen und Ströme Bauteile für die Spannungsregelung AC/DC-Netzteile Netzgeräte – Prinzipien Schaltnetzteil mit ␮-Prozessor Konstantstromquellen Getaktete Stromversorgungen

Contextual Info: Features • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection Against Short-circuit, Load Dump Overvoltage and Reverse VS Duty Cycle 18% to 100% Continuously Internally Reduced Pulse Slope of Lamp’s Voltage Interference and Damage Protection According to VDE 0839 and

siemens automotive relay dc 12v

Abstract: Control of Starter-generator BTS560P gasoline direct injection BTS660P TO263 siemens functional profet abs sensor bmw 300W AMPLY BTS640S2 BTS723
Contextual Info: 18th Conference ‘Vehicle Electronics’ 16/17 June 1998, Munich Semiconductor technologies and switches for the new automotive electrical system Semiconductor Technologies and Switches for new Automotive Electrical Systems Dr. Alfons Graf, Siemens AG, HL PS TM, 81617 Munich, Tel. +49 89/636-22805

T100

Abstract: U6083B U6083B-MY VT100
Contextual Info: Features • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection Against Short-circuit, Load Dump Overvoltage and Reverse VS Duty Cycle 18% to 100% Continuously Internally Reduced Pulse Slope of Lamp’s Voltage Interference and Damage Protection According to VDE 0839 and

BABT CR 0090

Abstract: bel 187 transistor diagram bel 187 transistor working bel 187 NPN TRANSISTOR telephone handset circuit schematic diagram auto dialling circuit bel 187 transistor P3400 bel 187 transistor with diagram of bel 187 transistor
Contextual Info: PRODUCT DATA SHEET '- f é f 'O Ù O ETAL DAATACUBE LINE INTERFACE MODULE P3400 A w orldw ide solu tio n to telecom s line interfacing, data and voice Features A pplications • Full perform ance to V.32 terbo; V.FC and V.34 V.Fast • M odem s to the h igh est data speeds

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

ATA6824

Abstract: pwm based bidirectional dc motor speed control l2 ATMEL flow soldering AEC-Q100 JESD78 QFN32 T100 723 voltage regulator ic
Contextual Info: Features • • • • • • • • • • • PWM and Direction-controlled Driving of Four Externally-powered NMOS Transistors High Temperature Capability up to 200° C Junction A Programmable Dead Time Is Included to Avoid Peak Currents Within the H-bridge

HCC4046B

Abstract: ZENER 5V2 4046B
Contextual Info: S 6 S-THOMSON D7C D I 7ia'iB37 DD14772 1 I C U S / H IO S i T T l INTEGRATED CIRCUIT — - 1 h c c /h c f 40«B | T-50-17 f _ 41C 08785 P R E L IM IN A R Y D A TA M ICROPOW ER P H A S E -L O C K ED LOOP • • • • • • • • • • • •

IC 4047 pin diagram

Abstract: internal circuit diagram for ic 4047 RC Oscillator circuit diagram with 4047 IC IC dc 4047 PIN CONNECTIONS OF IC 4047 ic 4047B 4047BD HCF4047BT HCF4047BE
Contextual Info: S G c o s / S -T H O fIS O N 07C D I r m u s INTEGRATED CIRCUIT 7 T S C] 2 3 7 00147A1 □ I . i v 1 fJCK hcc / hcf 4 0 « b . likLIi_ J . *»1C 08 794 T:S~/-/Ÿ LOW-POWER MONOSTABLE/ASTABLE M U LTIV IB R A TO R • • • • • • • • • •