TRANSISTOR 1000V Search Results

TRANSISTOR 1000V Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR 1000V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TRANSISTOR MODULE SQD400AA100 SQD400AA10 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for	OCR Scan	SQD400AA100 SQD400AA10 -400A	PDF
transistor 1000V 6A Abstract: diode 6A 1000v E76102 SQD300AA100 transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor Contextual Info: TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for	Original	SQD300AA100 E76102 SQD300AA100 SQD300AA120 transistor 1000V 6A diode 6A 1000v transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor	PDF
IC A 3120 Abstract: Transistor AC 51 transistor case To 105 a 3120 ic diode 400A 8A TRANSISTOR M6 transistor SQD400AA120 transistor VCE 1000V SQD400AA100 Contextual Info: TRANSISTOR MODULE SQD400AA100 UL;E76102 M SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for	Original	SQD400AA100 E76102 SQD400AA100 SQD400AA120 IC A 3120 Transistor AC 51 transistor case To 105 a 3120 ic diode 400A 8A TRANSISTOR M6 transistor SQD400AA120 transistor VCE 1000V	PDF
702 TRANSISTOR Abstract: SQD400AA100 Contextual Info: TRANSISTOR MODULE SQD400AA100 UL;E76102 （M） SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for	Original	SQD400AA100 E76102 SQD400AA100 113max. 100msec10sec 1msec100msec VCC600V 702 TRANSISTOR	PDF
IC A 3120 Abstract: Transistor AC 51 bx transistor a 3120 ic VCEX1000V SQD400AA100 derating factor Contextual Info: TRANSISTOR MODULE SQD400AA100 UL;E76102 （M） SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for	Original	SQD400AA100 E76102 SQD400AA100 113max. 100msec10sec 1msec100msec VCC600V IC A 3120 Transistor AC 51 bx transistor a 3120 ic VCEX1000V derating factor	PDF
QM10HB-2H Abstract: TRANSISTOR QM10HB-2H qm10hb2h transistor VCE 1000V E80276 DSA0019989 transistor 1000V 1000V 20A transistor Contextual Info: MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM10HB-2H • • • • • IC Collector current . 10A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 5	Original	QM10HB-2H E80276 E80271 QM10HB-2H TRANSISTOR QM10HB-2H qm10hb2h transistor VCE 1000V E80276 DSA0019989 transistor 1000V 1000V 20A transistor	PDF
NTE2311 Abstract: npn 1000V 15A NPN Transistor VCEO 1000V Contextual Info: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V	Original	NTE2311 NTE2311 npn 1000V 15A NPN Transistor VCEO 1000V	PDF
t25000 Abstract: QM10HB-2H Contextual Info: MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR _ INSULATED TYPE 1 j j QM10HB-2H • lc Collector c u rre n t. 10A • V cex Collector-em itter v o lta g e . 1000V j	OCR Scan	QM10HB-2H E80276 E80271 t25000 QM10HB-2H	PDF
E2 diode Abstract: Diode B2x Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1	Original	QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 110TAB 94max 32max 31max 35max 400/600V E2 diode Diode B2x	PDF
NPN Transistor VCEO 1000V Abstract: 2SC2688 2SC2688L transistor T 023 XT60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF	Original	2SC2688 2SC2688 2300pF) 50MHz -10mA) O-126 2SC2688L 2SC2688-x-T60-K 2SC2688L-x-T60-K NPN Transistor VCEO 1000V 2SC2688L transistor T 023 XT60	PDF
2SC2688 Abstract: NPN Transistor VCEO 1000V 2SC2688L QW-R204-023 NPN SILICON TRANSISTOR Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF	Original	2SC2688 2SC2688 2300pF) 50MHz -10mA) 2SC2688L-x-T60-K 2SC2688G-x-T60-K O-126 QW-R204-023 NPN Transistor VCEO 1000V 2SC2688L NPN SILICON TRANSISTOR	PDF
2SC2688 Abstract: 2SC2688L NPN Transistor VCEO 1000V Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF	Original	2SC2688 2SC2688 2300pF) 50MHz -10mA) O-126 2SC2688L 2SC2688-x-T60-A-K 2SC2688L-x-T60-A-K 2SC2688L NPN Transistor VCEO 1000V	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use	Original	BUJ403A O220AB	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for	Original	BUJ303B O220AB	PDF

Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ106A Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use	Original	BUJ106A O220AB	PDF
BUJ103AX Abstract: BP317 BU1706AX Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended	Original	BUJ103AX SCA60 135104/240/02/pp12 BUJ103AX BP317 BU1706AX	PDF
BP317 Abstract: BU1706AX BUJ204AX Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended	Original	BUJ204AX SCA60 135104/204/02/pp12 BP317 BU1706AX BUJ204AX	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use	Original	BUJ403A BUJ403A O220AB	PDF
vvvf motor Abstract: 600v 100a servo motors QCA100AA100 QCA100AA120 dc motor control 100A 1000V 20A transistor E76102 transistor 2A Contextual Info: TRANSISTOR MODULE QCA100AA100 UL;E76102 M QCA100AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated	Original	QCA100AA100 E76102 QCA100AA100 QCA100AA120 vvvf motor 600v 100a servo motors QCA100AA120 dc motor control 100A 1000V 20A transistor transistor 2A	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use	Original	BUJ103A O220AB SCA60 135104/240/02/pp12	PDF
BUJ204A Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for	Original	BUJ204A O220AB SCA60 135104/240/02/pp12 BUJ204A	PDF
BUJ103AX Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended	Original	BUJ103AX BUJ103AX	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended	Original	BUJ103AX	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ106A Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use	Original	BUJ106A BUJ106A O220AB	PDF

TRANSISTOR 1000V Search Results

TRANSISTOR 1000V Result Highlights (5)

TRANSISTOR 1000V Datasheets Context Search

transistor 1000V 6A

IC A 3120

702 TRANSISTOR

IC A 3120

QM10HB-2H

NTE2311

t25000

E2 diode

NPN Transistor VCEO 1000V

2SC2688

2SC2688

BUJ103AX

BP317

vvvf motor

BUJ204A

BUJ103AX