TRANSISTOR 1005 2G Search Results

transistor BC 245

Abstract: transistor bc 241 transistor BC 56 transistor BF 245 transistor bc 33 BC 114 transistor transistor bf 179 transistor BC-245 TRANSISTOR BC 181 bc 162 transistor
Contextual Info: Summary of Types SIEMENS ICs for Satellite Receivers Page Type Function TDA 6130-5X4 2-GHz Mixer 22 TDA 6140-5X TV SAT IF-FM-Demodulator 30 TDA 6142-5X FM-Demodulator for SAT TV with Switchable Input 38 TDA 6151 -5;5X Satellite-Video IC 48 TDA 6160-2S Multistandard Sound IF

smd transistor marking 2J

Abstract: TRANSISTOR SMD MARKING CODE 2b TRANSISTOR SMD MARKING CODE 1d smd code LY smd transistor marking ly SMD transistor MARKING CODE 2B qml-38535
Contextual Info: R E V IS IO N S LTR DESCRIPTION DATE APPROVED YR-M O-DA REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING REV SHEET 10 AMSCN/A 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 Tuan Nguyen CHECKED BY Larry Shaw

FPD1500SOT89CE

Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

Transistor AC 51 0865 75 834

Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

FPD1500SOT89E

Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
Contextual Info: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm

FPD1500SOT89CESR

Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
Contextual Info: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

Transistor AC 51 0865 75 730

Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm

FPD1500SOT89

Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
Contextual Info: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

FPD750SOT343E

Abstract: FPD750 FPD750SOT343 0402CS FPD750SOT343CE toko 1201
Contextual Info: FPD750SOT343E FPD750SOT34 3E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

FPD6836SOT343E

Abstract: 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540
Contextual Info: FPD6836SOT343E FPD6836SOT3 43ELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

0402CS

Abstract: FPD750SOT343 transistor 24 GHz
Contextual Info: FPD750SOT343 FPD750SOT34 3 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 RoHS Compliant and Pb-Free Product Description The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

FPD750SOT343

Abstract: 0402CS 3.5GHz BJT
Contextual Info: FPD750SOT343 FPD750SOT34 3 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 RoHS Compliant and Pb-Free Product Description The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

TRANSISTOR 726

Abstract: VSP8 Package NJG1507R
Contextual Info: NJG1507R SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1507R is a GaAs SPDT switch IC which exhibits low loss and high isolation, and ideally suitable for T/R switch of the digital wireless phone. This switch is operated in the wide frequency range from 50MHz to 3.0GHz at low operating voltage from +2.5V with

C5-10PF

Abstract: spdt gaas 1ghz NJG1506R
Contextual Info: NJG1506R SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1506R is a GaAs SPDT switch IC which features low loss, high isolation and low control current and ideally suitable for switching the RF receiving circuit of cellular phone. NJG1506R is operated in the wide frequency range from

C5-10PF

Abstract: spdt gaas 1ghz NJG1509F RF TRANSISTOR 2GHZ
Contextual Info: NJG1509F SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1509F is a SPDT switch GaAs MMIC which features low loss, high isolation and low operating voltage, and ideally suitable for the T/R switch of digital wireless phone handsets. This switch is operated in the wide frequency range from

pseudomorphic HEMT

Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

transistor bc 564

Abstract: bc 5578 0604HQ FPD6836SOT343 OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

FPD750

Abstract: FPD750SOT343CE 3.5GHz BJT
Contextual Info: FPD750SOT343CE FPD750SOT34 3CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

Contextual Info: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability

ai 757

Abstract: transistors ai 757 invertor P 721 transistor ai 757 NJG1508F INVERTOR APPLICATION NOTE
Contextual Info: 4 ÆÊt A NJG1508F GaAs SPDT SWITCH IC GENERAL DESCRIPTION • PACKAGE OUTLINE NJG1508F is a GaAs SPDT switch IC featuring a low loss,a high isolation and a low control current. In the wide frequency range from 100MHz to 3GHz,The this IC operates at a low voltage from 2.5V.

jrc 0720

Abstract: JRC 2100 8 pin JRC 2100 2100 jrc 1165 JRC transistor 5-1147 0720 JRC sy 171 2300 jrc Catalog JRC
Contextual Info: NJG1506R GaAs SPDT SWITCH IC • GENARAL DESCRIPTION NJG1506R is a GaAs SPDT switch IC featuring a low loss, a high isolation and a low control current. In the wide frequency range from 100MHz to 3GHz, this IC operates at a low voltage from 2.5V. Avery small package is adopted.

Contextual Info: NJG1506R GaAs SPDT SWITCH IC • GENARAL DESCRIPTION NJG1506R is a GaAs SPDT switch IC featuring a low loss, a high isolation and a low control current. In the wide frequency range from 100MHz to 3GHz, this IC operates at a low voltage from 2.5V. Avery small package is adopted.

JRC 2100

Abstract: JRC 2100 8 pin 2100 jrc transistor 2S D 716 1136 jrc P 721 g f IC JRC 1226 pc 817 UA 758 pc zo 107
Contextual Info: NJG1509F GaAs SPDT SWITCH IC • GENERAL DESCRIPTION NJG1509F is a GaAs SPDT switch IC operating from 100MHz to 3GHz. This Switch features low loss, high isolation and low voltage operation from +2.5V. It is suited for the T/R switch of digital cordless phone.

JRC 2100

Abstract: Catalog JRC JRC 2100 8 pin rule jem -1170 2100 jrc jrc 1351 jrc 0728 1351 jrc vcu 2100 33D5 T
Contextual Info: NJG1507R GaAs SPDT SWITCH 1C I GENERAL DESCRIPTION NJG1507R is a GaAs SPDT switch IC operating from 100MHz to 3GHz. This Switch features low loss, high isolation and low voltage operation from +2.5V. It is suited for the T/R switch of digital cordless phone.