TRANSISTOR 1012 F Search Results

transistor 1012 F

Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
Contextual Info:  Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

transistor 1012

Abstract: CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220
Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

ksr1012

Contextual Info: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: 66099 mu R A D IA TIO N T O L E R A N T O PTO C O U PLER OPTOELECTRONIC PRODUCTS DIVISION The collector is electrically connected to the case, Features c Meets or Exceeds M IL-S-19500 Radiation Requirements Current Transfer Ratio - 1 5 0% Typical 1000 Volts Electrical Isolation

3D24N2Y

Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät

PHILIPS SENSOR 2032

Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
Contextual Info: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V

6N13B

Abstract: 6H136 MGL250 MCL2501
Contextual Info: TT. mm flfl ! 3UALITY TECHNOLOGIES CORP D "I 7 4 h b û S l ?«ENERAD INSTRUMENT ¿g* DGOaTDT 3 'tnr-'¥/-&3 ^TRANSISTOR OPTOCOUPLERS m ê W m -• •* ' Ä S S Ä MCL2501 MGL2503 (HCPL-2503 MCL2502 (HCPL-2502) 6N136 6N135 PROPAGATION DELAY COMPARISON MINIMUM CTR SELECTION CHART

VIP 22A

Abstract: AD7546 Vip ct 22A
Contextual Info: AN ALO G D E V IC E S FEATURES Low Offset Voltage Drift Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Current Crosstalk: -124dB at 1kHz Low Bias Current: 35pA max Warmed Up Low Offset Voltage: 250|iV max Low Input Voltage: 2|iV p-p

Contextual Info: Neutron testing of the ISL70444SEH quad operational amplifier Nick van Vonno Intersil Corporation 15 October 2013 Revision 0 Table of Contents 1. Introduction 2. Part Description 3. Test Description 3.1 Irradiation facility 3.2 Characterization equipment 3.3 Experimental Matrix

BUW52

Abstract: transistor st z7 S877 transistor 026a N1010A Scans-007954 LC8a DQ26A
Contextual Info: 7^5^537 ppgaa?! M • S G S -T H O M S O N ■ [L d e T F G M O ! S G S - T HO MS ON B 3ÜE U W 5 2 D FAST SWITCHING POWER TRANSISTOR ■ FAST SW ITCHING TIMES ■ LOW SW ITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN ABSOLUTE MAXIMUM RATINGS

Contextual Info: That HEW LETT WHIM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar

4N49 opto

Contextual Info: 4N47, 4N48, 4N49 JAN. JANTX, AND JANTXV OPTOCOUPLERS D 3 0 3 1 , SEPTEMBER 1987 GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR • Very High Current Transfer Ratio . . . 50 0% Typical 4N49 • Photon Coupling for Isolator Applications

TRANSISTOR sd 346

Abstract: Lautsprecher RFT L 2911 Lautsprecher LP C 4804 transistor TRANSISTOR b 882 p rft lautsprecher transistor GC 228 Transistor B 886 service-mitteilungen RFT KR 650
Contextual Info: SERVICE-MITTEILUNGEN VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio - television I Ausgabe 1988 Seite 8 1-4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Sicherheitskontrollen für 4oooer Parbfernsengeräte Nachfolgend geben wir Hinweise, welche speziellen Kontrollen

N1033A

Abstract: n1033 10000 series of ECL gates N1013A N1011A c 1006 TRANSISTOR eel -16-2005 N1017A N1010A N1014A
Contextual Info: S IG N E T IC S D IG IT A L 1 .0 0 0 /1 0 ,0 0 0 S E R IE S ECL V PART DC OUTPUT NO. <0 t o + 75UC Dual 4 In p u t Gate. L O A D IN G DELAY FA C TO R w e e ty p . 2 O R O u tp uts w/P ulldow ns 4 .0 2 N O R Outputs w /P ulldow ns Dual 4 In p u t Gat«, 2 O R Outputs w /P ulldow ns

Contextual Info: SFH636 Vishay Semiconductors Optocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output FEATURES C 1 6 VCC A 2 5 E NC 3 4 • High speed connection optocoupler without base • Isolation test voltage: 5300 VRMS C

Contextual Info: SFH636 Vishay Semiconductors Optocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output FEATURES C 1 6 VCC A 2 5 E NC 3 4 • High speed connection optocoupler without base • Isolation test voltage: 5300 VRMS C

Contextual Info: Sil-Pad A2000 Higher Performance,High Reliability Insulator Features and Benefits T YPICAL PROPERT IES OF SIL-PAD A2000 PROPERTY Color • Thermal impedance: 0.32°C-in 2/W @50 psi • Optimal heat transfer • High thermal conductivity: 3.0 W/m-K IMPERIAL VALUE

smd transistor HX 45

Abstract: MSK2541
Contextual Info: ISO 9001 CERTIFIED BY DSCC DUAL HIGH POWER OP-AMP M.S. KENNEDY CORP. 8170 Thompson Road Cicero, N.Y. 13039 FEATURES: 2541 315 699-9201 MIL-PRF-38534 QUALIFIED Available as SMD #5962-9083801 HX High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V

k 2541

Abstract: high power fet audio amplifier schematic capacitor, 50 microfarad 10v smd transistor HX 5962-9083801HX MSK2541 MSK2541B
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP 2541 DUAL HIGH POWER OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Available as SMD #5962-9083801 HX High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V

2SC4215

Contextual Info: 2SC4215 TO SH IBA 2SC4215 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55 pF Typ. Low Noise Figure : NF = 2 dB (Typ.) (f = 100 MHz)

transistor TIP3055

Contextual Info: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.

Contextual Info: N AMER PHILIPS/DISCRETE 0inE D ^53*131 0D1S5A7 □ RZB12250Y r- %-*>'- s' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.

GEOY6653

Abstract: Q62702-P215 Q62702-P216
Contextual Info: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 229 SFH 229 FA SFH 229 SFH 229 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1100 nm SFH 229 und bei 880 nm (SFH 229 FA)

smd transistor HX

Abstract: 5962-9083801HX MSK2541E MSK2541 MSK2541B 2.2 microfarad non-electrolytic capacitor 8-pin to3 high power fet audio amplifier schematic h208 application of class B power amplifier with high load resistance
Contextual Info: MIL-PRF-38534 CERTIFIED M.S. KENNEDY CORP DUAL HIGH POWER OP-AMP 2541 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Available as SMD #5962-9083801 HX and 5962-9083803HX High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V